DE60027257D1 - Stromdetektor mit einer Hall-Effekt-Anordnung - Google Patents

Stromdetektor mit einer Hall-Effekt-Anordnung

Info

Publication number
DE60027257D1
DE60027257D1 DE60027257T DE60027257T DE60027257D1 DE 60027257 D1 DE60027257 D1 DE 60027257D1 DE 60027257 T DE60027257 T DE 60027257T DE 60027257 T DE60027257 T DE 60027257T DE 60027257 D1 DE60027257 D1 DE 60027257D1
Authority
DE
Germany
Prior art keywords
hall effect
current detector
effect arrangement
arrangement
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60027257T
Other languages
English (en)
Other versions
DE60027257T2 (de
Inventor
Koji Ohtsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Application granted granted Critical
Publication of DE60027257D1 publication Critical patent/DE60027257D1/de
Publication of DE60027257T2 publication Critical patent/DE60027257T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05569—Disposition the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
DE60027257T 1999-12-09 2000-11-23 Stromdetektor mit einer Hall-Effekt-Anordnung Expired - Fee Related DE60027257T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35006399 1999-12-09
JP35006399A JP2001165963A (ja) 1999-12-09 1999-12-09 ホール素子を備えた電流検出装置

Publications (2)

Publication Number Publication Date
DE60027257D1 true DE60027257D1 (de) 2006-05-24
DE60027257T2 DE60027257T2 (de) 2007-02-01

Family

ID=18407987

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60027257T Expired - Fee Related DE60027257T2 (de) 1999-12-09 2000-11-23 Stromdetektor mit einer Hall-Effekt-Anordnung

Country Status (4)

Country Link
US (1) US6462531B1 (de)
EP (1) EP1107328B1 (de)
JP (1) JP2001165963A (de)
DE (1) DE60027257T2 (de)

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JP3852554B2 (ja) * 1999-12-09 2006-11-29 サンケン電気株式会社 ホール素子を備えた電流検出装置
JP4164615B2 (ja) * 1999-12-20 2008-10-15 サンケン電気株式会社 ホ−ル素子を備えた電流検出装置
DE10051138A1 (de) * 2000-10-16 2002-05-02 Vacuumschmelze Gmbh & Co Kg Anordnung zur potentialfreien Messung hoher Ströme
EP1267173A3 (de) * 2001-06-15 2005-03-23 Sanken Electric Co., Ltd. Hall-Effektstromdetektor
DE60219561T2 (de) * 2001-07-06 2008-01-03 Sanken Electric Co. Ltd., Niiza Hall-Effekt-Stromdetektor
EP1273921A1 (de) * 2001-07-06 2003-01-08 Sanken Electric Co., Ltd. Hall-Effekt-Stromdetektor
JP2003124212A (ja) * 2001-10-09 2003-04-25 Sanken Electric Co Ltd 半導体装置およびその製造方法
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US6781359B2 (en) 2002-09-20 2004-08-24 Allegro Microsystems, Inc. Integrated current sensor
JP2004186439A (ja) * 2002-12-03 2004-07-02 Sanken Electric Co Ltd 半導体装置およびその製造方法
JP2004207477A (ja) * 2002-12-25 2004-07-22 Sanken Electric Co Ltd ホール素子を有する半導体装置
US7259545B2 (en) * 2003-02-11 2007-08-21 Allegro Microsystems, Inc. Integrated sensor
US7075287B1 (en) 2003-08-26 2006-07-11 Allegro Microsystems, Inc. Current sensor
US7709754B2 (en) * 2003-08-26 2010-05-04 Allegro Microsystems, Inc. Current sensor
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US7476816B2 (en) 2003-08-26 2009-01-13 Allegro Microsystems, Inc. Current sensor
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JP4904427B2 (ja) * 2005-05-27 2012-03-28 アレグロ・マイクロシステムズ・インコーポレーテッド 電流センサ
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US7768083B2 (en) 2006-01-20 2010-08-03 Allegro Microsystems, Inc. Arrangements for an integrated sensor
US20070279053A1 (en) 2006-05-12 2007-12-06 Taylor William P Integrated current sensor
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US8963536B2 (en) 2011-04-14 2015-02-24 Infineon Technologies Ag Current sensors, systems and methods for sensing current in a conductor
JP5695195B2 (ja) * 2011-07-13 2015-04-01 旭化成エレクトロニクス株式会社 電流センサ用基板及び電流センサ
WO2013008466A1 (ja) * 2011-07-13 2013-01-17 旭化成エレクトロニクス株式会社 電流センサ用基板及び電流センサ
US8907437B2 (en) 2011-07-22 2014-12-09 Allegro Microsystems, Llc Reinforced isolation for current sensor with magnetic field transducer
US8629539B2 (en) 2012-01-16 2014-01-14 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having non-conductive die paddle
US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
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US10234513B2 (en) 2012-03-20 2019-03-19 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
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Also Published As

Publication number Publication date
JP2001165963A (ja) 2001-06-22
DE60027257T2 (de) 2007-02-01
EP1107328B1 (de) 2006-04-12
EP1107328A3 (de) 2004-10-13
US6462531B1 (en) 2002-10-08
EP1107328A2 (de) 2001-06-13

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