DE60023367D1 - Abtastvorrichtung und Verfahren zum Abrufen von Multibitdaten - Google Patents

Abtastvorrichtung und Verfahren zum Abrufen von Multibitdaten

Info

Publication number
DE60023367D1
DE60023367D1 DE60023367T DE60023367T DE60023367D1 DE 60023367 D1 DE60023367 D1 DE 60023367D1 DE 60023367 T DE60023367 T DE 60023367T DE 60023367 T DE60023367 T DE 60023367T DE 60023367 D1 DE60023367 D1 DE 60023367D1
Authority
DE
Germany
Prior art keywords
bit data
scanning device
retrieving multi
retrieving
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60023367T
Other languages
English (en)
Other versions
DE60023367T2 (de
Inventor
Nien-Chao Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macronix International Co Ltd
Original Assignee
Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Publication of DE60023367D1 publication Critical patent/DE60023367D1/de
Application granted granted Critical
Publication of DE60023367T2 publication Critical patent/DE60023367T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5647—Multilevel memory with bit inversion arrangement

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
DE60023367T 1999-01-12 2000-01-07 Abtastvorrichtung und Verfahren zum Abrufen von Multibitdaten Expired - Lifetime DE60023367T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/229,454 US6178114B1 (en) 1999-01-12 1999-01-12 Sensing apparatus and method for fetching multi-level cell data
US229454 1999-01-12

Publications (2)

Publication Number Publication Date
DE60023367D1 true DE60023367D1 (de) 2005-12-01
DE60023367T2 DE60023367T2 (de) 2006-07-06

Family

ID=22861319

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60023367T Expired - Lifetime DE60023367T2 (de) 1999-01-12 2000-01-07 Abtastvorrichtung und Verfahren zum Abrufen von Multibitdaten

Country Status (3)

Country Link
US (2) US6178114B1 (de)
EP (1) EP1020869B1 (de)
DE (1) DE60023367T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6928652B1 (en) * 1998-05-29 2005-08-09 Webtv Networks, Inc. Method and apparatus for displaying HTML and video simultaneously
US6215483B1 (en) * 1998-06-17 2001-04-10 Webtv Networks, Inc. Combining real-time and batch mode logical address links
US6938270B2 (en) * 1999-04-07 2005-08-30 Microsoft Corporation Communicating scripts in a data service channel of a video signal
DE60040295D1 (de) * 1999-07-13 2008-10-30 Samsung Electronics Co Ltd Adresserzeugungsvorrichtung zur anwendung in einem mehrstufigen kanal-verschachteler/entschachteler
US7174562B1 (en) * 1999-12-20 2007-02-06 Microsoft Corporation Interactive television triggers having connected content/disconnected content attribute
US7082056B2 (en) 2004-03-12 2006-07-25 Super Talent Electronics, Inc. Flash memory device and architecture with multi level cells
US6707713B1 (en) 2000-03-01 2004-03-16 Advanced Micro Devices, Inc. Interlaced multi-level memory
US6766524B1 (en) * 2000-05-08 2004-07-20 Webtv Networks, Inc. System and method for encouraging viewers to watch television programs
US6327178B1 (en) 2000-07-18 2001-12-04 Micron Technology, Inc. Programmable circuit and its method of operation
TW490675B (en) * 2000-12-22 2002-06-11 Macronix Int Co Ltd Control method of multi-stated NROM
US6483734B1 (en) 2001-11-26 2002-11-19 Hewlett Packard Company Memory device having memory cells capable of four states
JP2004086991A (ja) * 2002-08-27 2004-03-18 Renesas Technology Corp 不揮発性記憶装置
US7038944B2 (en) * 2004-07-06 2006-05-02 Oki Electric Industry Co., Ltd. Non-volatile memory device
US9021529B2 (en) * 2004-07-15 2015-04-28 Microsoft Technology Licensing, Llc Content recordation techniques
ITMI20042538A1 (it) * 2004-12-29 2005-03-29 Atmel Corp Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli
KR100616214B1 (ko) * 2005-06-30 2006-08-28 주식회사 하이닉스반도체 멀티-레벨 셀을 가지는 플래시 메모리 장치의 프로그램제어 회로 및 그 프로그램 제어 방법
US7697316B2 (en) * 2006-12-07 2010-04-13 Macronix International Co., Ltd. Multi-level cell resistance random access memory with metal oxides
US9824750B2 (en) 2015-02-24 2017-11-21 Empire Technology Development Llc Memory sensing

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5012448A (en) 1985-12-13 1991-04-30 Ricoh Company, Ltd. Sense amplifier for a ROM having a multilevel memory cell
JPH07120720B2 (ja) * 1987-12-17 1995-12-20 三菱電機株式会社 不揮発性半導体記憶装置
JP3179943B2 (ja) 1993-07-12 2001-06-25 株式会社東芝 半導体記憶装置
US5543738A (en) 1994-12-27 1996-08-06 United Microelectronics Corp. Multi-stage sense amplifier for read-only memory having current comparators
JP2697665B2 (ja) 1995-03-31 1998-01-14 日本電気株式会社 半導体記憶装置及び半導体記憶装置からのデータ読み出し方法
JP2689948B2 (ja) 1995-04-28 1997-12-10 日本電気株式会社 多値メモリセルを有する半導体記憶装置
DE69516402T2 (de) * 1995-07-31 2000-11-02 St Microelectronics Srl Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens
US5619448A (en) 1996-03-14 1997-04-08 Myson Technology, Inc. Non-volatile memory device and apparatus for reading a non-volatile memory array
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system

Also Published As

Publication number Publication date
US6178114B1 (en) 2001-01-23
US6154390A (en) 2000-11-28
EP1020869A1 (de) 2000-07-19
DE60023367T2 (de) 2006-07-06
EP1020869B1 (de) 2005-10-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition