DE60020467D1 - Vorrichtung auf Basis von organischem Material zur Erfassung eines Probenanalyts - Google Patents
Vorrichtung auf Basis von organischem Material zur Erfassung eines ProbenanalytsInfo
- Publication number
- DE60020467D1 DE60020467D1 DE60020467T DE60020467T DE60020467D1 DE 60020467 D1 DE60020467 D1 DE 60020467D1 DE 60020467 T DE60020467 T DE 60020467T DE 60020467 T DE60020467 T DE 60020467T DE 60020467 D1 DE60020467 D1 DE 60020467D1
- Authority
- DE
- Germany
- Prior art keywords
- detecting
- analyte
- organic material
- device based
- sample analyte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99870186A EP1085320A1 (de) | 1999-09-13 | 1999-09-13 | Vorrichtung auf Basis von organischem Material zur Erfassung eines Probenanalyts |
EP99870186 | 1999-09-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60020467D1 true DE60020467D1 (de) | 2005-07-07 |
DE60020467T2 DE60020467T2 (de) | 2006-04-27 |
Family
ID=8243889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60020467T Expired - Lifetime DE60020467T2 (de) | 1999-09-13 | 2000-09-13 | Vorrichtung auf Basis von organischem Material zur Erfassung eines Probenanalyts |
Country Status (4)
Country | Link |
---|---|
US (1) | US6521109B1 (de) |
EP (1) | EP1085320A1 (de) |
AT (1) | ATE297014T1 (de) |
DE (1) | DE60020467T2 (de) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10061299A1 (de) * | 2000-12-08 | 2002-06-27 | Siemens Ag | Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu |
US20030077600A1 (en) * | 2001-10-23 | 2003-04-24 | Chi-Chan Chen | Photovoltaic device to accelerate the interaction among biomolecules |
US7009663B2 (en) * | 2003-12-17 | 2006-03-07 | Planar Systems, Inc. | Integrated optical light sensitive active matrix liquid crystal display |
AU2002336341A1 (en) * | 2002-02-20 | 2003-09-09 | Planar Systems, Inc. | Light sensitive display |
US7053967B2 (en) | 2002-05-23 | 2006-05-30 | Planar Systems, Inc. | Light sensitive display |
DE10209075A1 (de) * | 2002-03-01 | 2003-09-18 | Infineon Technologies Ag | CMOS-Prozeß-kompatible Hoch-DK Oberflächenbeschichtung zur kapazitiven Detektion und Stimulation biologischer Gewebe |
US7344678B2 (en) * | 2002-11-15 | 2008-03-18 | The Regents Of The University Of California | Composite sensor membrane |
DE10255755B4 (de) * | 2002-11-28 | 2006-07-13 | Schneider, Christian, Dr. | Integrierte elektronische Schaltung mit Feldeffekt-Sensoren zum Nachweis von Biomolekülen |
US6936496B2 (en) | 2002-12-20 | 2005-08-30 | Hewlett-Packard Development Company, L.P. | Nanowire filament |
DE50313445D1 (de) * | 2003-01-09 | 2011-03-10 | Polyic Gmbh & Co Kg | Ikgerät, sowie verwendung dazu |
US20080084374A1 (en) * | 2003-02-20 | 2008-04-10 | Planar Systems, Inc. | Light sensitive display |
US20080048995A1 (en) * | 2003-02-20 | 2008-02-28 | Planar Systems, Inc. | Light sensitive display |
EP1452862A1 (de) * | 2003-02-28 | 2004-09-01 | Siemens Aktiengesellschaft | Gassensitiver Feldeffekttransistor mit einer gassensitiven Schicht und Verfahren zu deren Herstellung |
DE10338277A1 (de) * | 2003-08-20 | 2005-03-17 | Siemens Ag | Organischer Kondensator mit spannungsgesteuerter Kapazität |
DE10339036A1 (de) | 2003-08-25 | 2005-03-31 | Siemens Ag | Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu |
DE10340644B4 (de) * | 2003-09-03 | 2010-10-07 | Polyic Gmbh & Co. Kg | Mechanische Steuerelemente für organische Polymerelektronik |
DE10340643B4 (de) * | 2003-09-03 | 2009-04-16 | Polyic Gmbh & Co. Kg | Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht |
US7223611B2 (en) | 2003-10-07 | 2007-05-29 | Hewlett-Packard Development Company, L.P. | Fabrication of nanowires |
US7132298B2 (en) | 2003-10-07 | 2006-11-07 | Hewlett-Packard Development Company, L.P. | Fabrication of nano-object array |
DE10351201B3 (de) * | 2003-11-03 | 2005-07-14 | Infineon Technologies Ag | Sensorvorrichtung mit Waferbondverbindungsaufbau und Herstellungsverfahren derselben |
US7382004B2 (en) * | 2003-11-25 | 2008-06-03 | Sensor Electronic Technology, Inc. | Semiconductor sensing device |
US7462512B2 (en) * | 2004-01-12 | 2008-12-09 | Polytechnic University | Floating gate field effect transistors for chemical and/or biological sensing |
DE102004002024A1 (de) * | 2004-01-14 | 2005-08-11 | Siemens Ag | Organischer Transistor mit selbstjustierender Gate-Elektrode und Verfahren zu dessen Herstellung |
US20070281362A1 (en) * | 2004-03-03 | 2007-12-06 | Koninklijke Philips Electronics, N.V. | Detection of No With a Semi-Conducting Compound and a Sensor and Device to Detect No |
TWI241020B (en) * | 2004-03-31 | 2005-10-01 | Univ Nat Yunlin Sci & Tech | Method of manufacturing TiO2 sensing film, ISFET having TiO2 sensing film, and methods and apparatus for measuring the temperature parameter, drift, and hysteresis thereof |
US7407738B2 (en) * | 2004-04-02 | 2008-08-05 | Pavel Kornilovich | Fabrication and use of superlattice |
US7773139B2 (en) * | 2004-04-16 | 2010-08-10 | Apple Inc. | Image sensor with photosensitive thin film transistors |
US20050241959A1 (en) * | 2004-04-30 | 2005-11-03 | Kenneth Ward | Chemical-sensing devices |
US7683435B2 (en) | 2004-04-30 | 2010-03-23 | Hewlett-Packard Development Company, L.P. | Misalignment-tolerant multiplexing/demultiplexing architectures |
US7247531B2 (en) | 2004-04-30 | 2007-07-24 | Hewlett-Packard Development Company, L.P. | Field-effect-transistor multiplexing/demultiplexing architectures and methods of forming the same |
US20060024814A1 (en) * | 2004-07-29 | 2006-02-02 | Peters Kevin F | Aptamer-functionalized electrochemical sensors and methods of fabricating and using the same |
DE102004040831A1 (de) * | 2004-08-23 | 2006-03-09 | Polyic Gmbh & Co. Kg | Funketikettfähige Umverpackung |
DE102004059464A1 (de) * | 2004-12-10 | 2006-06-29 | Polyic Gmbh & Co. Kg | Elektronikbauteil mit Modulator |
DE102004059467A1 (de) * | 2004-12-10 | 2006-07-20 | Polyic Gmbh & Co. Kg | Gatter aus organischen Feldeffekttransistoren |
DE102004059465A1 (de) * | 2004-12-10 | 2006-06-14 | Polyic Gmbh & Co. Kg | Erkennungssystem |
DE102004063435A1 (de) | 2004-12-23 | 2006-07-27 | Polyic Gmbh & Co. Kg | Organischer Gleichrichter |
US7375012B2 (en) * | 2005-02-28 | 2008-05-20 | Pavel Kornilovich | Method of forming multilayer film |
DE102005009820A1 (de) * | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe mit organischen Logik-Schaltelementen |
DE102005009819A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe |
DE102005017655B4 (de) * | 2005-04-15 | 2008-12-11 | Polyic Gmbh & Co. Kg | Mehrschichtiger Verbundkörper mit elektronischer Funktion |
DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
DE102005035589A1 (de) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Verfahren zur Herstellung eines elektronischen Bauelements |
DE102005035590A1 (de) * | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Elektronisches Bauelement |
DE102005042166A1 (de) * | 2005-09-06 | 2007-03-15 | Polyic Gmbh & Co.Kg | Organisches Bauelement und ein solches umfassende elektrische Schaltung |
DE102005044306A1 (de) * | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
US20070109239A1 (en) * | 2005-11-14 | 2007-05-17 | Den Boer Willem | Integrated light sensitive liquid crystal display |
JP5220623B2 (ja) * | 2006-03-16 | 2013-06-26 | ユニバーサル ナノセンサー テクノロジーズ インコーポレーテッド | 誘電率検出方法及びシステム |
US20070290205A1 (en) * | 2006-06-14 | 2007-12-20 | Chin-Sheng Chen | Dual-channel thin film transistor |
US8180421B2 (en) * | 2007-12-12 | 2012-05-15 | Kimberly-Clark Worldwide, Inc. | Resonance energy transfer based detection of nosocomial infection |
EP2254458A1 (de) | 2008-02-04 | 2010-12-01 | Bayer HealthCare, LLC | Analytensensoren auf halbleiterbasis und verfahren |
TWI391656B (zh) * | 2008-05-16 | 2013-04-01 | Nat Univ Chung Hsing | Gas sensor structure |
CA2735670A1 (en) | 2008-09-19 | 2010-03-25 | Swetha Chinnayelka | Analyte sensors, systems, testing apparatus and manufacturing methods |
CN102202575A (zh) * | 2008-09-19 | 2011-09-28 | 拜尔健康护理有限责任公司 | 刺血针分析物传感器和制造方法 |
US8551400B2 (en) * | 2008-09-19 | 2013-10-08 | Bayer Healthcare Llc | Analyte sensors, testing apparatus and manufacturing methods |
CN102171557B (zh) | 2008-09-19 | 2016-10-19 | 安晟信医疗科技控股公司 | 具有增强的电化学活性的电化学装置及其制造方法 |
CA2754052C (en) | 2009-03-04 | 2016-12-06 | Al-Amin Dhirani | Conductance detection system and method |
DE102009045475B4 (de) * | 2009-10-08 | 2023-06-29 | Robert Bosch Gmbh | Gassensitive Halbleitervorrichtung sowie deren Verwendung |
US9310923B2 (en) | 2010-12-03 | 2016-04-12 | Apple Inc. | Input device for touch sensitive devices |
US9329703B2 (en) | 2011-06-22 | 2016-05-03 | Apple Inc. | Intelligent stylus |
US8638320B2 (en) | 2011-06-22 | 2014-01-28 | Apple Inc. | Stylus orientation detection |
US8928635B2 (en) | 2011-06-22 | 2015-01-06 | Apple Inc. | Active stylus |
CN104412101B (zh) * | 2012-03-06 | 2018-09-07 | 生命科学生物传感器诊断私人有限公司 | 有机薄膜晶体管及其在传感应用中的用途 |
US9176604B2 (en) | 2012-07-27 | 2015-11-03 | Apple Inc. | Stylus device |
US9652090B2 (en) | 2012-07-27 | 2017-05-16 | Apple Inc. | Device for digital communication through capacitive coupling |
US9557845B2 (en) | 2012-07-27 | 2017-01-31 | Apple Inc. | Input device for and method of communication with capacitive devices through frequency variation |
US10048775B2 (en) | 2013-03-14 | 2018-08-14 | Apple Inc. | Stylus detection and demodulation |
WO2014188563A1 (ja) * | 2013-05-23 | 2014-11-27 | 株式会社日立製作所 | 半導体ガスセンサ |
US10067580B2 (en) | 2013-07-31 | 2018-09-04 | Apple Inc. | Active stylus for use with touch controller architecture |
US10067618B2 (en) | 2014-12-04 | 2018-09-04 | Apple Inc. | Coarse scan and targeted active mode scan for touch |
US10474277B2 (en) | 2016-05-31 | 2019-11-12 | Apple Inc. | Position-based stylus communication |
CN107204375B (zh) * | 2017-05-19 | 2019-11-26 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制作方法 |
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NL8600872A (nl) * | 1986-04-07 | 1987-11-02 | Sentron V O F | Veldeffecttransistor, voorzien van een de gateisolator bedekkend membraan. |
NL8602242A (nl) * | 1986-09-05 | 1988-04-05 | Stichting Ct Voor Micro Elektr | Werkwijze voor het vervaardigen van een refet of een chemfet, en de vervaardigde refet of chemfet. |
DE3806955A1 (de) * | 1987-03-03 | 1988-09-15 | Res Ass Bio Tech Chem | Glucoseempfindlicher fet-sensor und verfahren zu seiner herstellung |
US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
GB8909561D0 (en) * | 1989-04-26 | 1989-06-14 | Kodak Ltd | Radiation-sensitive composition and use thereof in the preparation of electrochemical ion sensors |
DE4427921C2 (de) * | 1994-08-06 | 2002-09-26 | Forschungszentrum Juelich Gmbh | Chemische Sensoren, insbesondere Biosensoren, auf Siliciumbasis |
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WO1999010939A2 (en) * | 1997-08-22 | 1999-03-04 | Koninklijke Philips Electronics N.V. | A method of manufacturing a field-effect transistor substantially consisting of organic materials |
US6153070A (en) * | 1998-05-07 | 2000-11-28 | Honeywell Inc | Sensor packaging using heat staking technique |
US6291088B1 (en) * | 1998-09-30 | 2001-09-18 | Xerox Corporation | Inorganic overcoat for particulate transport electrode grid |
-
1999
- 1999-09-13 EP EP99870186A patent/EP1085320A1/de not_active Withdrawn
-
2000
- 2000-09-13 US US09/660,763 patent/US6521109B1/en not_active Expired - Lifetime
- 2000-09-13 DE DE60020467T patent/DE60020467T2/de not_active Expired - Lifetime
- 2000-09-13 AT AT00870200T patent/ATE297014T1/de not_active IP Right Cessation
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Publication number | Publication date |
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ATE297014T1 (de) | 2005-06-15 |
EP1085320A1 (de) | 2001-03-21 |
DE60020467T2 (de) | 2006-04-27 |
US6521109B1 (en) | 2003-02-18 |
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