DE60016374D1 - Schaltkreis zur reduzierung und optimierung von schreib-leseübergangszeiten in magnetischen aufzeichnungsgeräten - Google Patents

Schaltkreis zur reduzierung und optimierung von schreib-leseübergangszeiten in magnetischen aufzeichnungsgeräten

Info

Publication number
DE60016374D1
DE60016374D1 DE60016374T DE60016374T DE60016374D1 DE 60016374 D1 DE60016374 D1 DE 60016374D1 DE 60016374 T DE60016374 T DE 60016374T DE 60016374 T DE60016374 T DE 60016374T DE 60016374 D1 DE60016374 D1 DE 60016374D1
Authority
DE
Germany
Prior art keywords
reducing
circuit
magnetic recording
recording devices
reading times
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60016374T
Other languages
English (en)
Other versions
DE60016374T2 (de
Inventor
M Bhandari
David Allouche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE60016374D1 publication Critical patent/DE60016374D1/de
Publication of DE60016374T2 publication Critical patent/DE60016374T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/10Digital recording or reproducing
    • G11B20/10009Improvement or modification of read or write signals
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45098PI types
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45479Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45928Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
    • H03F3/45932Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by using feedback means
    • H03F3/45937Measuring at the loading circuit of the differential amplifier
    • H03F3/45941Controlling the input circuit of the differential amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/04Frequency selective two-port networks
    • H03H11/12Frequency selective two-port networks using amplifiers with feedback
    • H03H11/1291Current or voltage controlled filters
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002Special dispositions or recording techniques
    • G11B2005/0005Arrangements, methods or circuits
    • G11B2005/001Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45466Indexing scheme relating to differential amplifiers the CSC being controlled, e.g. by a signal derived from a non specified place in the dif amp circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45506Indexing scheme relating to differential amplifiers the CSC comprising only one switch
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45631Indexing scheme relating to differential amplifiers the LC comprising one or more capacitors, e.g. coupling capacitors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45634Indexing scheme relating to differential amplifiers the LC comprising one or more switched capacitors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45646Indexing scheme relating to differential amplifiers the LC comprising an extra current source
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45702Indexing scheme relating to differential amplifiers the LC comprising two resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45726Indexing scheme relating to differential amplifiers the LC comprising more than one switch, which are not cross coupled

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Signal Processing (AREA)
  • Digital Magnetic Recording (AREA)
  • Electronic Switches (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
DE60016374T 1999-09-28 2000-09-25 Schaltkreis zur reduzierung und optimierung von schreib-leseübergangszeiten in magnetischen aufzeichnungsgeräten Expired - Lifetime DE60016374T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/407,776 US6404578B1 (en) 1999-09-28 1999-09-28 Circuit for reduction and optimization of write-to-read settling times in magnetic medium storage devices
US407776 1999-09-28
PCT/EP2000/009400 WO2001024168A1 (en) 1999-09-28 2000-09-25 Circuit for reduction and optimization of write-to-read settling times in magnetic medium storage devices

Publications (2)

Publication Number Publication Date
DE60016374D1 true DE60016374D1 (de) 2005-01-05
DE60016374T2 DE60016374T2 (de) 2005-12-01

Family

ID=23613481

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60016374T Expired - Lifetime DE60016374T2 (de) 1999-09-28 2000-09-25 Schaltkreis zur reduzierung und optimierung von schreib-leseübergangszeiten in magnetischen aufzeichnungsgeräten

Country Status (6)

Country Link
US (2) US6404578B1 (de)
EP (1) EP1135769B1 (de)
JP (1) JP2003510747A (de)
KR (2) KR20010080576A (de)
DE (1) DE60016374T2 (de)
WO (1) WO2001024168A1 (de)

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US6751034B1 (en) * 2000-07-19 2004-06-15 Texas Instruments Incorporated Preamplifier read recovery parade
US6721117B2 (en) * 2000-11-29 2004-04-13 Agere Systems Inc. Read/write system with reduced write-to-read transition recovery time independent from input voltage and input current offset
CN1419740A (zh) * 2001-01-24 2003-05-21 皇家菲利浦电子有限公司 带开关场效应电容器的可调谐集成rf滤波器
US7292400B2 (en) * 2001-04-23 2007-11-06 Seagate Technology Llc Device for limiting current in a sensor
US6876253B2 (en) 2001-09-28 2005-04-05 Koninklijke Philips Electronics N.V. Amplifier for alternating signals superimposed on a continuous signal and method for amplifying such signals
FR2850499B1 (fr) * 2003-01-28 2005-10-21 St Microelectronics Sa Procede et circuit de correction de l'offset d'une chaine d'amplification
US7339760B2 (en) * 2004-01-30 2008-03-04 Agere Systems Inc. Integrated bias and offset recovery amplifier
US7119977B2 (en) * 2004-04-17 2006-10-10 Agere Systems Inc. Reduced recovery time for perpendicular recording systems
US20070127149A1 (en) * 2005-12-02 2007-06-07 Texas Instruments Incorporated Offset cancellation scheme for perpendicular reader
US8144125B2 (en) 2006-03-30 2012-03-27 Cypress Semiconductor Corporation Apparatus and method for reducing average scan rate to detect a conductive object on a sensing device
US8547114B2 (en) 2006-11-14 2013-10-01 Cypress Semiconductor Corporation Capacitance to code converter with sigma-delta modulator
US8089288B1 (en) 2006-11-16 2012-01-03 Cypress Semiconductor Corporation Charge accumulation capacitance sensor with linear transfer characteristic
US8144126B2 (en) 2007-05-07 2012-03-27 Cypress Semiconductor Corporation Reducing sleep current in a capacitance sensing system
US8436263B2 (en) * 2007-06-29 2013-05-07 Cypress Semiconductor Corporation Noise resistant capacitive sensor
US8570053B1 (en) 2007-07-03 2013-10-29 Cypress Semiconductor Corporation Capacitive field sensor with sigma-delta modulator
US8089289B1 (en) 2007-07-03 2012-01-03 Cypress Semiconductor Corporation Capacitive field sensor with sigma-delta modulator
US8169238B1 (en) 2007-07-03 2012-05-01 Cypress Semiconductor Corporation Capacitance to frequency converter
US8525798B2 (en) 2008-01-28 2013-09-03 Cypress Semiconductor Corporation Touch sensing
US8358142B2 (en) 2008-02-27 2013-01-22 Cypress Semiconductor Corporation Methods and circuits for measuring mutual and self capacitance
US8319505B1 (en) 2008-10-24 2012-11-27 Cypress Semiconductor Corporation Methods and circuits for measuring mutual and self capacitance
US9104273B1 (en) 2008-02-29 2015-08-11 Cypress Semiconductor Corporation Multi-touch sensing method
US8321174B1 (en) 2008-09-26 2012-11-27 Cypress Semiconductor Corporation System and method to measure capacitance of capacitive sensor array
US8723827B2 (en) 2009-07-28 2014-05-13 Cypress Semiconductor Corporation Predictive touch surface scanning
US8711502B1 (en) 2012-10-12 2014-04-29 Lsi Corporation Preamplifier-to-channel communication in a storage device
TWI530090B (zh) * 2013-10-02 2016-04-11 聯詠科技股份有限公司 放大器電路及其操作方法
US9800277B2 (en) 2013-10-11 2017-10-24 Motorola Solutions, Inc. Interference detection and mitigation in radio frequency receivers
EP3477895B1 (de) * 2017-10-26 2020-05-06 Melexis Technologies NV Sende-empfangseinheit zur datenübertragung über einen differentiellen bus
US10896694B2 (en) * 2018-10-30 2021-01-19 Marvell Asia Pte, Ltd. Thermal compensation for laser in heat assisted magnetic recording
US11716097B2 (en) 2021-12-29 2023-08-01 Western Digital Technologies, Inc. Signal correction using soft information in a data channel

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Also Published As

Publication number Publication date
US6400217B1 (en) 2002-06-04
KR20010080576A (ko) 2001-08-22
US6404578B1 (en) 2002-06-11
EP1135769A1 (de) 2001-09-26
DE60016374T2 (de) 2005-12-01
KR20010080588A (ko) 2001-08-22
JP2003510747A (ja) 2003-03-18
WO2001024168A1 (en) 2001-04-05
EP1135769B1 (de) 2004-12-01

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Legal Events

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