DE60006749D1 - Infrarotdetektormatrix mit Mikrobrückenstruktur - Google Patents

Infrarotdetektormatrix mit Mikrobrückenstruktur

Info

Publication number
DE60006749D1
DE60006749D1 DE60006749T DE60006749T DE60006749D1 DE 60006749 D1 DE60006749 D1 DE 60006749D1 DE 60006749 T DE60006749 T DE 60006749T DE 60006749 T DE60006749 T DE 60006749T DE 60006749 D1 DE60006749 D1 DE 60006749D1
Authority
DE
Germany
Prior art keywords
infrared detector
detector matrix
microbridge structure
microbridge
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60006749T
Other languages
English (en)
Other versions
DE60006749T2 (de
Inventor
Katsuya Kawano
Naoki Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE60006749D1 publication Critical patent/DE60006749D1/de
Application granted granted Critical
Publication of DE60006749T2 publication Critical patent/DE60006749T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE60006749T 1999-07-26 2000-07-25 Infrarotdetektormatrix mit Mikrobrückenstruktur Expired - Lifetime DE60006749T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP21033999 1999-07-26
JP21033999 1999-07-26
JP33404999A JP3460810B2 (ja) 1999-07-26 1999-11-25 熱分離構造を有する熱型赤外線検出器
JP33404999 1999-11-25

Publications (2)

Publication Number Publication Date
DE60006749D1 true DE60006749D1 (de) 2004-01-08
DE60006749T2 DE60006749T2 (de) 2004-09-23

Family

ID=26517993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60006749T Expired - Lifetime DE60006749T2 (de) 1999-07-26 2000-07-25 Infrarotdetektormatrix mit Mikrobrückenstruktur

Country Status (5)

Country Link
US (1) US6441374B1 (de)
EP (1) EP1072875B1 (de)
JP (1) JP3460810B2 (de)
KR (1) KR100343869B1 (de)
DE (1) DE60006749T2 (de)

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JP3377041B2 (ja) * 2000-03-10 2003-02-17 日本電気株式会社 熱分離構造を有する熱型赤外線検出器
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JP3604130B2 (ja) 2001-12-04 2004-12-22 株式会社アイ・エイチ・アイ・エアロスペース 熱型赤外線検出素子およびその製造方法ならびに熱型赤外線検出素子アレイ
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KR100497334B1 (ko) * 2002-11-09 2005-06-28 한국전자통신연구원 박막트랜지스터 구조를 갖는 적외선 감지기용 픽셀 어레이 및 그 제조 방법
KR100497333B1 (ko) * 2002-11-09 2005-06-28 한국전자통신연구원 박막트랜지스터 구조를 갖는 감지기용 픽셀 어레이 및 그 제조방법
JP2007509315A (ja) 2003-10-09 2007-04-12 オカス コーポレーション ２層構造のボロメータ型赤外線センサ及びその製造方法
JPWO2005062394A1 (ja) * 2003-12-24 2007-07-19 日本電気株式会社 ボロメータ
JP4535367B2 (ja) 2004-05-24 2010-09-01 ルネサスエレクトロニクス株式会社 集積回路装置
JP4385255B2 (ja) * 2004-06-10 2009-12-16 日本電気株式会社 ボロメータ型赤外線検出器及び残像の低減方法
JP5201780B2 (ja) * 2004-06-14 2013-06-05 ルネサスエレクトロニクス株式会社 光検出器および光検出装置
FR2875298B1 (fr) * 2004-09-16 2007-03-02 Commissariat Energie Atomique Detecteur thermique de rayonnement electromagnetique comportant une membrane absorbante fixee en suspension
JP4228232B2 (ja) * 2005-02-18 2009-02-25 日本電気株式会社 熱型赤外線検出素子
US7459686B2 (en) 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
US7462831B2 (en) 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding
US7655909B2 (en) 2006-01-26 2010-02-02 L-3 Communications Corporation Infrared detector elements and methods of forming same
DE502006006067D1 (de) * 2006-03-14 2010-03-18 Fraunhofer Ges Forschung Ng
JP4721141B2 (ja) * 2006-03-17 2011-07-13 日本電気株式会社 熱型赤外線固体撮像素子
US7718965B1 (en) 2006-08-03 2010-05-18 L-3 Communications Corporation Microbolometer infrared detector elements and methods for forming same
US8153980B1 (en) 2006-11-30 2012-04-10 L-3 Communications Corp. Color correction for radiation detectors
KR100853202B1 (ko) * 2006-12-06 2008-08-20 한국전자통신연구원 볼로미터 및 그 제조 방법
US20080185522A1 (en) * 2007-02-06 2008-08-07 Shih-Chia Chang Infrared sensors and methods for manufacturing the infrared sensors
JP5255873B2 (ja) 2008-03-17 2013-08-07 浜松ホトニクス株式会社 光検出器
JP5259430B2 (ja) * 2009-01-06 2013-08-07 浜松ホトニクス株式会社 光検出器
KR100983818B1 (ko) * 2009-09-02 2010-09-27 한국전자통신연구원 볼로미터용 저항재료, 이를 이용한 적외선 검출기용 볼로미터, 및 이의 제조방법
US9658111B2 (en) 2009-10-09 2017-05-23 Flir Systems, Inc. Microbolometer contact systems and methods
US8729474B1 (en) * 2009-10-09 2014-05-20 Flir Systems, Inc. Microbolometer contact systems and methods
JP2011153871A (ja) * 2010-01-26 2011-08-11 Seiko Epson Corp 熱型光検出器、熱型光検出装置及び電子機器
JP5589486B2 (ja) * 2010-03-26 2014-09-17 セイコーエプソン株式会社 焦電型光検出器、焦電型光検出装置及び電子機器
JP5569134B2 (ja) * 2010-05-10 2014-08-13 セイコーエプソン株式会社 熱型光検出装置および電子機器
US8765514B1 (en) 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
JP5879695B2 (ja) * 2011-02-24 2016-03-08 セイコーエプソン株式会社 焦電型検出器、焦電型検出装置及び電子機器
JP5830877B2 (ja) * 2011-02-24 2015-12-09 セイコーエプソン株式会社 焦電型検出器、焦電型検出装置及び電子機器
RU2490751C1 (ru) * 2012-02-09 2013-08-20 Открытое акционерное общество "АНГСТРЕМ" Микроболометр с упрочненными поддерживающими балками и способы его изготовления
US8900906B2 (en) 2012-03-08 2014-12-02 Robert Bosch Gmbh Atomic layer deposition strengthening members and method of manufacture
US9199838B2 (en) 2013-10-25 2015-12-01 Robert Bosch Gmbh Thermally shorted bolometer
JP5846265B2 (ja) * 2014-07-30 2016-01-20 セイコーエプソン株式会社 焦電型光検出器、焦電型光検出装置及び電子機器
US20160079306A1 (en) * 2014-09-12 2016-03-17 Excelitas Technologies Singapore Pte. Ltd. Surface Micro-Machined Infrared Sensor Using Highly Temperature Stable Interferometric Absorber
DE102015208073A1 (de) * 2015-04-30 2016-11-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Strahlungsdetektor, Array von Strahlungsdetektoren und Verfahren zur Herstellung eines Strahlungsdetektors
US11118961B2 (en) * 2016-09-02 2021-09-14 Sony Semiconductor Solutions Corporation Imaging apparatus with infrared-based temperature detection devices
EP3667268A4 (de) * 2017-08-10 2021-05-19 Hamamatsu Photonics K.K. Lichtdetektor
JPWO2020174732A1 (ja) * 2019-02-28 2021-12-23 パナソニックＩｐマネジメント株式会社 赤外線センサ及び赤外線センサアレイ
US11788893B1 (en) * 2021-04-22 2023-10-17 National Technology & Engineering Solutions Of Sandia, Llc Nanoscale bolometer operating near the thermodynamic limit
CN113340436B (zh) * 2021-07-12 2023-04-14 北京北方高业科技有限公司 一种非制冷cmos红外探测器

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EP0354369B1 (de) 1988-08-12 1995-07-26 Texas Instruments Incorporated Infrarot-Detektor
US5286976A (en) * 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
EP0405638A3 (en) * 1989-06-20 1991-10-23 Philips Electronic And Associated Industries Limited Thermal-radiation detectors, detection systems and their manufacture
KR0147211B1 (ko) 1994-08-30 1998-11-02 이헌조 도전성 마이크로 브릿지의 제조방법
US5602043A (en) 1995-01-03 1997-02-11 Texas Instruments Incorporated Monolithic thermal detector with pyroelectric film and method
US5688699A (en) 1996-01-16 1997-11-18 Raytheon Company Microbolometer
JP3608298B2 (ja) 1996-07-05 2005-01-05 株式会社ニコン 熱型赤外線センサ及びその製造方法
JP3549363B2 (ja) 1997-05-29 2004-08-04 三菱電機株式会社 赤外線固体撮像素子
JP3921320B2 (ja) * 2000-01-31 2007-05-30 日本電気株式会社 熱型赤外線検出器およびその製造方法

Also Published As

Publication number Publication date
US6441374B1 (en) 2002-08-27
EP1072875A1 (de) 2001-01-31
EP1072875B1 (de) 2003-11-26
KR20010039752A (ko) 2001-05-15
JP2001099705A (ja) 2001-04-13
KR100343869B1 (ko) 2002-07-20
DE60006749T2 (de) 2004-09-23
JP3460810B2 (ja) 2003-10-27

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