DE60004518D1 - Mos-verstärker mit variabler verstärkung - Google Patents

Mos-verstärker mit variabler verstärkung

Info

Publication number
DE60004518D1
DE60004518D1 DE60004518T DE60004518T DE60004518D1 DE 60004518 D1 DE60004518 D1 DE 60004518D1 DE 60004518 T DE60004518 T DE 60004518T DE 60004518 T DE60004518 T DE 60004518T DE 60004518 D1 DE60004518 D1 DE 60004518D1
Authority
DE
Germany
Prior art keywords
differential
receiver
rejection
image
esd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60004518T
Other languages
English (en)
Other versions
DE60004518T2 (de
Inventor
R Behzad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Broadcom Corp
Original Assignee
Broadcom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/439,101 external-priority patent/US7092043B2/en
Priority claimed from US09/483,551 external-priority patent/US6445039B1/en
Priority claimed from US09/493,942 external-priority patent/US6885275B1/en
Application filed by Broadcom Corp filed Critical Broadcom Corp
Application granted granted Critical
Publication of DE60004518D1 publication Critical patent/DE60004518D1/de
Publication of DE60004518T2 publication Critical patent/DE60004518T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
    • H03L7/22—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using more than one loop
    • H03L7/23—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using more than one loop with pulse counters or frequency dividers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/16—Multiple-frequency-changing
    • H03D7/161—Multiple-frequency-changing all the frequency changers being connected in cascade
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/18—Modifications of frequency-changers for eliminating image frequencies
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/04—Frequency selective two-port networks
    • H03H11/12—Frequency selective two-port networks using amplifiers with feedback
    • H03H11/1291—Current or voltage controlled filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/02—Details
    • H03J3/06—Arrangements for obtaining constant bandwidth or gain throughout tuning range or ranges
    • H03J3/08—Arrangements for obtaining constant bandwidth or gain throughout tuning range or ranges by varying a second parameter simultaneously with the tuning, e.g. coupling bandpass filter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/02—Details
    • H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
    • H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
    • H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/10—Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0053—Printed inductances with means to reduce eddy currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H01F2021/125—Printed variable inductor with taps, e.g. for VCO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
    • H03J2200/10—Tuning of a resonator by means of digitally controlled capacitor bank

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Superheterodyne Receivers (AREA)
  • Structure Of Receivers (AREA)
  • Noise Elimination (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
DE60004518T 1999-04-13 2000-04-12 Mos-verstärker mit variabler verstärkung Expired - Lifetime DE60004518T2 (de)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US493942 1983-05-12
US12913399P 1999-04-13 1999-04-13
US129133P 1999-04-13
US09/439,101 US7092043B2 (en) 1998-11-12 1999-11-12 Fully integrated tuner architecture
US439101 1999-11-12
US09/483,551 US6445039B1 (en) 1998-11-12 2000-01-14 System and method for ESD Protection
US483551 2000-01-14
US09/493,942 US6885275B1 (en) 1998-11-12 2000-01-28 Multi-track integrated spiral inductor
PCT/US2000/009842 WO2000062419A2 (en) 1999-04-13 2000-04-12 Mos variable gain amplifier

Publications (2)

Publication Number Publication Date
DE60004518D1 true DE60004518D1 (de) 2003-09-18
DE60004518T2 DE60004518T2 (de) 2004-06-24

Family

ID=27494781

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60004518T Expired - Lifetime DE60004518T2 (de) 1999-04-13 2000-04-12 Mos-verstärker mit variabler verstärkung

Country Status (5)

Country Link
EP (1) EP1177621B1 (de)
AT (1) ATE247338T1 (de)
AU (1) AU4456300A (de)
DE (1) DE60004518T2 (de)
WO (1) WO2000062419A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7009547B2 (en) 2001-12-17 2006-03-07 University Of Utah Research Foundation Current steering folding circuit
US6635931B1 (en) 2002-04-02 2003-10-21 Illinois Institute Of Technology Bonding pad-oriented all-mode ESD protection structure
US7593701B2 (en) * 2006-04-24 2009-09-22 Icera Canada ULC Low noise CMOS transmitter circuit with high range of gain
CN111107427B (zh) * 2019-11-20 2022-01-28 Oppo广东移动通信有限公司 图像处理的方法及相关产品
CN111030623A (zh) * 2019-12-25 2020-04-17 武汉邮电科学研究院有限公司 一种校准直流失调的可调增益放大器
TWI790861B (zh) * 2021-12-16 2023-01-21 世界先進積體電路股份有限公司 靜電放電保護電路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3835499A1 (de) * 1988-10-19 1990-04-26 Philips Patentverwaltung Schaltungsanordnung zum einstellen der amplitude eines signals
US5587688A (en) * 1994-10-31 1996-12-24 Rockwell International Corp. Differential automatic gain-control amplifier having an enhanced range
US5880631A (en) * 1996-02-28 1999-03-09 Qualcomm Incorporated High dynamic range variable gain amplifier

Also Published As

Publication number Publication date
DE60004518T2 (de) 2004-06-24
ATE247338T1 (de) 2003-08-15
EP1177621B1 (de) 2003-08-13
WO2000062419A2 (en) 2000-10-19
EP1177621A2 (de) 2002-02-06
WO2000062419A3 (en) 2001-01-04
AU4456300A (en) 2000-11-14

Similar Documents

Publication Publication Date Title
AU2741400A (en) Multi-track integrated spiral inductor
ATE276605T1 (de) Integrierte tunerarchitektur
KR101125500B1 (ko) 사후-왜곡 모드 및 고이득 모드를 갖는 ｌｎａ
US7697915B2 (en) Gain boosting RF gain stage with cross-coupled capacitors
US7676206B2 (en) Low noise, low distortion radio receiver front-end
US8761703B2 (en) Variable-gain mixer for a wireless receiver with current compensation
US7233780B2 (en) Method and apparatus for performing DC offset cancellation in a receiver
US4205276A (en) Audio amplifier with low AM radiation
CA2179552A1 (en) Low noise amplifier/mixer/frequency synthesizer circuit for an rf system
DE60004518D1 (de) Mos-verstärker mit variabler verstärkung
US20060128340A1 (en) Radio frequency mixer with notch filter
Sturm et al. CMOS noise canceling balun LNA with tunable bandpass from 4.6 GHz to 5.8 GHz
Shaeffer et al. A 115 mw CMos GPs Receiver
EP1349268A3 (de) VariablerOS-Verstärker
US6054899A (en) Automatic gain control circuit with low distortion
JP3612241B2 (ja) テレビジョンチューナの中間周波回路
Ryynanen et al. RF gain control in direct conversion receivers
Deiss et al. A 200-MHz sub-mA RF front end for wireless hearing aid applications
US20090170464A1 (en) Enhanced Mixer Device
JP2988106B2 (ja) 光受信回路
JP2002246858A (ja) 利得制御増幅回路およびそれを用いた受信機、送信機
KR100204597B1 (ko) 주파수 혼합기 구조
Yanduru et al. A highly integrated GPS front-end for cellular applications in 90nm CMOS
Lei et al. A 10-mA Current and 1.1-μV Sensitivity Single-Chip FM Radio Receiver
JP4324282B2 (ja) 受信機用ｉｃ

Legal Events

Date Code Title Description
8364 No opposition during term of opposition