DE519161C - AC rectifier with rectifier material arranged between two electrodes - Google Patents
AC rectifier with rectifier material arranged between two electrodesInfo
- Publication number
- DE519161C DE519161C DEP56662D DEP0056662D DE519161C DE 519161 C DE519161 C DE 519161C DE P56662 D DEP56662 D DE P56662D DE P0056662 D DEP0056662 D DE P0056662D DE 519161 C DE519161 C DE 519161C
- Authority
- DE
- Germany
- Prior art keywords
- rectifier
- electrode
- selenium
- electrodes
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 8
- 239000011669 selenium Substances 0.000 claims description 8
- 229910052711 selenium Inorganic materials 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 239000004566 building material Substances 0.000 claims 1
- 229940065287 selenium compound Drugs 0.000 description 6
- 150000003343 selenium compounds Chemical class 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Motor Or Generator Current Collectors (AREA)
Description
Wechselstrom-Gleichrichter mit zwischen zwei Elektroden angeordnetem Gleichrichtermaterial Es ist bekannt, daß Selen, Selenverbindungen, Metalloxyde, Metallsulfide usw. als Gleichrichtermaterial verwendet werden können. Dieses Material befindet sich hierbei zwischen zwei Elektroden, die z. B. aus Metall bestehen. Diese sind gewöhnlich plattenförmig ausgebildet, und das Gleichrichterinaterial ist in dünner Schicht dazwischen angeordnet.AC rectifier with arranged between two electrodes Rectifier material It is known that selenium, selenium compounds, metal oxides, Metal sulfides, etc. can be used as the rectifying material. This material is located between two electrodes, the z. B. made of metal. These are usually plate-shaped and the rectifier material is in thin layer in between.
Bei Gleichrichterschichten aus Selen bzw. Selenverbindungen erhält man eine gute Gleichrichterwirkung, wenn man diese Schicht mit einer Elektrode z. B. durch Zusammenschmelzen fest verbindet und die andere Elektrode nur mechanisch andrückt. Es hat sich gezeigt, daß bei dieser Kombination eine erhebliche Verbesserung einerseits dadurch erzielt wird, daß man die angedrückte Elektrode aus Blei oder Wismut bildet, anderseits dadurch, da.ß man die fest mit der Gleichrichterschlcht aus Selen bzw. Selenverbindungen verbundene Elektrode aus Metall der Eisengruppe der Metalle bildet.With rectifier layers made of selenium or selenium compounds you get a good rectifier effect if you use this layer with an electrode z. B. firmly connects by melting together and the other electrode only mechanically presses. It has been found that this combination is a considerable improvement is achieved on the one hand that the pressed electrode made of lead or Bismuth is formed, on the other hand, by being fixed to the rectifier socket Electrode made of metal of the iron group, connected from selenium or selenium compounds which forms metals.
Es ist zwar schon bekannt, Blei als E lektrodenmaterial zu verwenden, jedoch nicht in Verbindung mit einer Gleichrichterschicht aus Selen oder Selenverbindungen, sondern nur in Verbindung mit anderen Gleichrichterschichten, wo es nicht die in Verbindung mit Selen auftretende spezifische Wirkung hat, sondern durch andere weiche Metalle ersetzt werden kann, und nur den Zweck hat, eine gute Kontaktgebung auf der ganzen Oberfläche zu erzielen. Daß im vorliegenden Falle eine spezifische Wirkung, die wahrscheinlich mit dem chemischen Aufbau des Materials zusammenhängt, vorliegt, geht aus der Tatsache hervor, daß z. B. Zinn für den vorliegenden Zweck unbrauchbar ist, obwohl dieses Material sich wegen seiner Weichheit ebensogut flächenförmig andrücken läßt wie Blei.It is already known to use lead as an electrode material, but not in connection with a rectifier layer made of selenium or selenium compounds, but only in connection with other rectifier layers where the in Connection with selenium has specific effect occurring, but through other soft Metals can be replaced, and only has the purpose of making good contact of the entire surface. That in the present case a specific effect which is probably related to the chemical structure of the material is present, emerges from the fact that e.g. B. Tin useless for the present purpose is, although this material is just as flat because of its softness like lead.
Zu den Metallen der Eisengruppe, welche für die mit der Gleichrichterschicht fest verbundene Elektrode verwendet werden, gehören Eisen, Nickel, Kobalt, Mangan, Chrom, Molybdän, Wolfram und Uran.Among the metals of the iron group, which are used for those with the rectifier layer Fixed electrode used include iron, nickel, cobalt, manganese, Chromium, molybdenum, tungsten and uranium.
Die Verbindung dieser Metalle in der angegebenen Weise hat insbesondere den Vorteil, d.aß die Leistung des Gleichrichters pro Flächeneinheit sehr groß wird.The connection of these metals in the specified manner has in particular the advantage that the power of the rectifier per unit area becomes very large.
Es ist schon bekannt, Eisen als Bestandteil der Gleichrichtermasse (Schicht) zu verwenden. Auch ist es bekannt, Chrom als Material einer angedrückten Elektrode zu verwenden. Die Verwendung dieser Metalle geschah jedoch bisher nicht in der hier in Frage stehenden Zusammenstellung als Elektrodenmaterial für eine fest mit einer aus Selen oder Selenverbindungen bestehenden Gleichrichterschicht verbundene Elektrode. Gleichrichter, die nach Maßgabe der Errindung .aufgebaut sind, können z. B. bei 4'% olt Spannung in der einen Richtung einen mehr. als 1 ooomal größeren -Widerstand Haben als in der anderen Richtung.It is already known that iron is a component of the rectifier ground (Layer) to use. It is also known to use chromium as a pressed material Electrode to use. However, the use of these metals has not yet happened in the compilation in question here as an electrode material for a fixed with a rectifier layer consisting of selenium or selenium compounds connected electrode. Rectifier according to the invention .Built up, z. B. at 4% olt tension in one direction one more. than 1 ooomal greater resistance than in the other direction.
Es ist nicht nötig, die Elektroden vollst,iiidig aus dem angegebenen Metall zu bilden; vielmehr genügt es, die aus anderem Metall gebildeten Elektroden auf der Oberfläche mit einem Überzug aus dem genannten Metall zu überziehen.It is not necessary to completely remove the electrodes from the specified range Metal form; rather, it is sufficient to use the electrodes formed from another metal to be coated on the surface with a coating of said metal.
Es hat sich ergeben, daß es nicht nötig ist, daß die genannten Metalle sehr rein sind. Auch Metallegierungen, z. B. aus Blei und Wismut für die angedrückte Elektrode oder aus Chrom und Eisen für die Elektrode, welche mit dem Selen bzw. mit den Selenverbindungen innig verbunden ist, kömienverwendet werden.It has been found that it is not necessary that the metals mentioned are very pure. Metal alloys, e.g. B. made of lead and bismuth for the pressed Electrode or made of chromium and iron for the electrode, which is connected to the selenium or is intimately connected with the selenium compounds, can be used.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP56662D DE519161C (en) | 1927-12-06 | 1927-12-07 | AC rectifier with rectifier material arranged between two electrodes |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP0056662 | 1927-12-06 | ||
| DEP56662D DE519161C (en) | 1927-12-06 | 1927-12-07 | AC rectifier with rectifier material arranged between two electrodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE519161C true DE519161C (en) | 1931-02-25 |
Family
ID=25990853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEP56662D Expired DE519161C (en) | 1927-12-06 | 1927-12-07 | AC rectifier with rectifier material arranged between two electrodes |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE519161C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE757281C (en) * | 1938-12-14 | 1953-10-05 | Aeg | Electrically asymmetrically conductive system, in particular dry rectifier, with a barrier layer between the semiconductor and the carrier electrode and a method for its production |
| DE897451C (en) * | 1949-03-09 | 1953-11-23 | Licentia Gmbh | Selenium rectifier with bismuth electrode, especially for measuring small AC voltages |
| DE932812C (en) * | 1948-10-02 | 1955-09-08 | Siemens Ag | Process for the production of dry rectifiers, in particular selenium rectifiers |
| DE971775C (en) * | 1942-09-22 | 1959-03-26 | Hildegard Koepke Dr | Device for amplifying electrical currents and voltages |
| DE1101625B (en) * | 1955-02-07 | 1961-03-09 | Licentia Gmbh | Method of manufacturing selenium rectifiers |
| DE975845C (en) * | 1951-12-20 | 1962-10-25 | Standard Elek K Lorenz Ag | Process for the production of selenium rectifier plates with a multilayer cover electrode |
| DE976468C (en) * | 1949-08-15 | 1963-09-19 | Licentia Gmbh | Method for producing an excess semiconductor from a defect semiconductor |
| DE1614182B1 (en) * | 1966-08-20 | 1972-05-31 | Mitsubishi Heavy Ind Ltd | ELECTROLYTIC CELL WITH AT LEAST ONE EQUALIZING ELECTRODE |
-
1927
- 1927-12-07 DE DEP56662D patent/DE519161C/en not_active Expired
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE757281C (en) * | 1938-12-14 | 1953-10-05 | Aeg | Electrically asymmetrically conductive system, in particular dry rectifier, with a barrier layer between the semiconductor and the carrier electrode and a method for its production |
| DE971775C (en) * | 1942-09-22 | 1959-03-26 | Hildegard Koepke Dr | Device for amplifying electrical currents and voltages |
| DE932812C (en) * | 1948-10-02 | 1955-09-08 | Siemens Ag | Process for the production of dry rectifiers, in particular selenium rectifiers |
| DE897451C (en) * | 1949-03-09 | 1953-11-23 | Licentia Gmbh | Selenium rectifier with bismuth electrode, especially for measuring small AC voltages |
| DE976468C (en) * | 1949-08-15 | 1963-09-19 | Licentia Gmbh | Method for producing an excess semiconductor from a defect semiconductor |
| DE975845C (en) * | 1951-12-20 | 1962-10-25 | Standard Elek K Lorenz Ag | Process for the production of selenium rectifier plates with a multilayer cover electrode |
| DE1101625B (en) * | 1955-02-07 | 1961-03-09 | Licentia Gmbh | Method of manufacturing selenium rectifiers |
| DE1614182B1 (en) * | 1966-08-20 | 1972-05-31 | Mitsubishi Heavy Ind Ltd | ELECTROLYTIC CELL WITH AT LEAST ONE EQUALIZING ELECTRODE |
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