DE502006009291D1 - Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer - Google Patents

Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer

Info

Publication number
DE502006009291D1
DE502006009291D1 DE200650009291 DE502006009291T DE502006009291D1 DE 502006009291 D1 DE502006009291 D1 DE 502006009291D1 DE 200650009291 DE200650009291 DE 200650009291 DE 502006009291 T DE502006009291 T DE 502006009291T DE 502006009291 D1 DE502006009291 D1 DE 502006009291D1
Authority
DE
Germany
Prior art keywords
iii
wafers
annealed
single crystal
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE200650009291
Other languages
English (en)
Inventor
Manfred Dr Jurisch
Stefan Dr Eichler
Thomas Buenger
Berndt Dr Weinert
Frank Dr Boerner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Freiberger Compound Materials GmbH
Original Assignee
Freiberger Compound Materials GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Materials GmbH filed Critical Freiberger Compound Materials GmbH
Publication of DE502006009291D1 publication Critical patent/DE502006009291D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE200650009291 2005-07-01 2006-06-02 Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer Active DE502006009291D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200510030851 DE102005030851A1 (de) 2005-07-01 2005-07-01 Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer
US69782605P 2005-07-08 2005-07-08

Publications (1)

Publication Number Publication Date
DE502006009291D1 true DE502006009291D1 (de) 2011-05-26

Family

ID=37545065

Family Applications (2)

Application Number Title Priority Date Filing Date
DE200510030851 Withdrawn DE102005030851A1 (de) 2005-07-01 2005-07-01 Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer
DE200650009291 Active DE502006009291D1 (de) 2005-07-01 2006-06-02 Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE200510030851 Withdrawn DE102005030851A1 (de) 2005-07-01 2005-07-01 Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer

Country Status (1)

Country Link
DE (2) DE102005030851A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017204910B4 (de) 2017-03-23 2018-10-04 Singulus Technologies Ag Trägerkassette und Trägerkassettenstapel
CN115279953A (zh) * 2020-02-28 2022-11-01 Axt有限公司 低腐蚀坑密度、低滑移线密度、以及低应变磷化铟

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750692B2 (ja) * 1984-09-06 1995-05-31 日本電気株式会社 ▲ｉｉｉ▼―▲ｖ▼族化合物半導体の熱処理方法
WO1989008158A1 (en) * 1988-02-24 1989-09-08 Nippon Mining Co., Ltd. Single crystal of compound semiconductor, process for its production and semiconductor device manufactured by using same
US5011794A (en) * 1989-05-01 1991-04-30 At&T Bell Laboratories Procedure for rapid thermal annealing of implanted semiconductors
JP2967780B1 (ja) * 1998-09-28 1999-10-25 住友電気工業株式会社 ＧａＡｓ単結晶基板およびそれを用いたエピタキシャルウェハ
TWI295483B (en) * 2002-01-31 2008-04-01 Sumitomo Chemical Co 3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same

Also Published As

Publication number Publication date
DE102005030851A1 (de) 2007-01-04

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