DE455107C - Process for the production of detector material - Google Patents
Process for the production of detector materialInfo
- Publication number
- DE455107C DE455107C DEG62240D DEG0062240D DE455107C DE 455107 C DE455107 C DE 455107C DE G62240 D DEG62240 D DE G62240D DE G0062240 D DEG0062240 D DE G0062240D DE 455107 C DE455107 C DE 455107C
- Authority
- DE
- Germany
- Prior art keywords
- production
- detector material
- sensitivity
- heated
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims description 8
- 238000000034 method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000002244 precipitate Substances 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 7
- 238000005245 sintering Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 206010011878 Deafness Diseases 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 239000002969 artificial stone Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052949 galena Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 description 1
- 239000011028 pyrite Substances 0.000 description 1
- 229910052683 pyrite Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Description
Verfahren zur Herstellung von Detektormaterial. Die in der Radiotechnik als Detektormaterial benutzten, natürlich vorkommenden Mineralien, wie Pyrit, Molybdänglanz, Silicium, B.lriglanz usw., haben bekanntlich alle den Nachteil, daß sie sogenannte taube Stellen besitzen, d. h. daß ihre Oberfläche nicht gleichmäßig wellenempfindlich ist und die für den Empfang geeigneten Stellen erst durch längeres Probieren gesucht werden müssen, was sehr störend ist. Dasselbe trifft auch zu für die meist durch Zusammenschmelzen der Komponenten erhaltenen synthetischen Steine.Process for the production of detector material. The ones in radio technology naturally occurring minerals used as detector material, such as pyrite, molybdenum luster, Silicon, B.lriglanz, etc., all have the disadvantage, as is known, that they are so-called have deaf spots, d. H. that their surface is not evenly sensitive to waves and the locations suitable for reception are only sought after trying for a long time which is very annoying. The same is true for most of them Fusing together the components obtained synthetic stones.
Eingehende Versuche haben nun ergeben, daß man Detektorsteine von gleichmäßiger höchster Empfindlichkeit an allen Stellen ihrer Oberfläche dadurch erhalten kann, daß man die hierfür in Frage kommenden Verbindungen auf chemischem Wege in Form ihrer amorphen Niederschläge herstellt und unter Luftabschluß oder in einer neutralen@Ätmosphäre längere Zeit auf eine Temperatur erhitzt, die dicht unterhalb des Schmelzpunktes der betreffenden Verbindung liegt. Es hat sich dabei in überraschender Weise gezeigt, daß das in amorphem Zustande gegen elektrische Wellen unempfindliche Material durch diese Behandlung nicht nur in einen kristallinischen Zustand übergeht, sondern auch eine hohe und gleichmäßige Empfindlichkeit erlangt. Durch geeignete Mischung untereinander oder geringe Beimengungen fremder Bestandteile kann die erreichte Empfindlichkeit bedeutend verbessert werden. So wurden beispielsweise die Sulfide von Eisen, Blei, Molybdän usw. vermittels Schwefelwasserstoffs bzw. Schwefelammoniums gefällt und die amorphen gepulverten Niederschläge längere Zeit unter Luftabschluß erhitzt, ohne sie je- doch zum Schmelzen zu bringen. Die erhaltenen Steine waren hart, kristallisiert und von gleichmäßig guter Empfindlichkeit. Diese Methode, durch einfaches Erhitzen ohne Schmelzfluß aus amorphem, unempfindlichem Material Kristalle von hoher Empfindlichkeit darzustellen, ist neu und wesentlich verschieden von der bekannten Methode des Kristallisierend bzw. Umkristallisierend aus dem Schmelzfluß, wie sie beispielsweise in dem Patent 21g 683 für Zinkoxyd und in der englichen Zeitschrift »The wireless World and Radio Review« 1924, Seite 435 bis 436, für natürlichen und künstlichen Bleiglanz beschrieben ist. Daß man die Empfindlichkeit von Detektorsteinen durch einfaches Erhitzen steigern kann, ist bekannt und sowohl in der oben angeführten Zeitschrift als auch in der englischen Patentschrift 15 467 vom Jahre igoi erwähnt. Hierbei handelt es sich aber um Kristalle, die bereits von Natur aus wellenempfindlich sind und deren Empfindlich-],zeit nur verbessert werden soll.Extensive experiments have now shown that detector stones of uniform maximum sensitivity can be obtained at all points on their surface by chemically producing the compounds in question in the form of their amorphous precipitates and in the absence of air or in a neutral atmosphere for a longer period of time heated to a temperature just below the melting point of the compound in question. It has surprisingly been found that the material, which is insensitive to electrical waves in the amorphous state, not only changes to a crystalline state as a result of this treatment, but also attains a high and uniform sensitivity. The sensitivity achieved can be significantly improved by suitable mixing with one another or by adding small amounts of foreign constituents. For example, the sulphides of iron, lead, molybdenum etc. were precipitated by means of hydrogen sulphide or sulphurammonium and the amorphous powdered precipitates were heated for a long time in the absence of air, but without causing them to melt. The stones obtained were hard, crystallized and of consistently good sensitivity. This method of producing crystals of high sensitivity by simply heating without a melt flow from amorphous, insensitive material is new and essentially different from the known method of crystallizing or recrystallizing from the melt flow, as for example in the patent 21g 683 for zinc oxide and in the English journal "The Wireless World and Radio Review" 1924, pages 435 to 436, for natural and artificial galena is described. It is known that the sensitivity of detector stones can be increased simply by heating and is mentioned both in the above-mentioned journal and in English patent specification 15 467 from igoi. However, these are crystals that are already naturally sensitive to waves and whose sensitivity -], should only be improved over time.
Scheinbar besteht zwischen der Schmelztemperatur der bekannten Verfahren und der hier lediglich in Frage kommenden Sinterungstemeratur nur ein gradueller Unterschied; in' Wirklichkeit liegt aber in der Vermeidung des Schmelzpunktes gerade der Vorteil des neuen Verfahrens begründet, janz abgesehen davon, daß ein Sinterungsvorgang sowohl in physikalischer wie chemischer Hinsicht bekanntlich etwas völlig anderes ist als ein Schmelzvorgang. Der Schmelzpunkt eines Körpers oder einer 'Veriiindüng liegt bei einer ganz bestimmten Temperatur, während die Sinterung bereits viel früher einsetzt und bei der Temperatur gehalten werden kann, die für den gewünschten Vorgang am vorteilhaftesten ist. Es kommt ferner hinzu, daß durch die Erhitzung bis zum Sintern die Möglichkeit gegeben ist, dem Material vor der Erhitzung eine bestimmte Form zu geben, die während der Sinterung erhalten bleibt, während beim Schmelzen die Formlinge naturgemäß wieder zu einem kompakten Block zusammenfließen.Apparently there is between the melting temperature of the known processes and the sintering temperature, which is only possible here, is only a gradual one Difference; in 'reality, however, lies in avoiding the melting point the advantage of the new procedure is justified, quite apart from that of that, that a sintering process is known from both a physical and chemical point of view is something completely different from a melting process. The melting point of a body or a Veriiindüng is at a very specific temperature, while the Sintering starts much earlier and can be kept at that temperature, which is most beneficial for the desired operation. It is also important that the possibility of heating up to sintering is given to the material to give a certain shape before heating, which is obtained during sintering remains, while during melting the briquettes naturally become compact again Flow together block.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEG62240D DE455107C (en) | 1924-09-18 | 1924-09-19 | Process for the production of detector material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEG0062240 | 1924-09-18 | ||
DEG62240D DE455107C (en) | 1924-09-18 | 1924-09-19 | Process for the production of detector material |
Publications (1)
Publication Number | Publication Date |
---|---|
DE455107C true DE455107C (en) | 1928-01-24 |
Family
ID=25978998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEG62240D Expired DE455107C (en) | 1924-09-18 | 1924-09-19 | Process for the production of detector material |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE455107C (en) |
-
1924
- 1924-09-19 DE DEG62240D patent/DE455107C/en not_active Expired
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