DE573811C - Process for the production of selenium cells - Google Patents
Process for the production of selenium cellsInfo
- Publication number
- DE573811C DE573811C DET37544D DET0037544D DE573811C DE 573811 C DE573811 C DE 573811C DE T37544 D DET37544 D DE T37544D DE T0037544 D DET0037544 D DE T0037544D DE 573811 C DE573811 C DE 573811C
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- selenide
- electrodes
- cell body
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 21
- 229910052711 selenium Inorganic materials 0.000 title claims description 21
- 239000011669 selenium Substances 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 150000003346 selenoethers Chemical class 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 claims description 2
- 210000005056 cell body Anatomy 0.000 claims 3
- 210000004027 cell Anatomy 0.000 claims 2
- 210000003168 insulating cell Anatomy 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
DEUTSCHES REICHGERMAN EMPIRE
AUSGEGEBEN AM 6. APRIL 1933ISSUED ON APRIL 6, 1933
REICHSPATENTAMTREICH PATENT OFFICE
PATENTSCHRIFTPATENT LETTERING
KLASSE 21g GRUPPECLASS 21g GROUP
Tobis Tonbild-Syndikat Akt.-Ges. in BerlinTobis Tonbild-Syndikat Akt.-Ges. in Berlin
Verfahren zur Herstellung von SelenzellenProcess for the production of selenium cells
Patentiert im Deutschen Reiche vom io. September 1929 abPatented in the German Empire by the io. September 1929
Die Erfindung bezieht sich auf ein Verfahren zur Herstellung von Selenzellen. Es ist bekannt, Selenzellen dadurch herzustellen, daß das Selen dampfförmig auf den Elektroden niedergeschlagen wird. Ferner ist es bereits bekannt, dem Selen sogenannte Selenide beizumengen, durch welche bekanntlich die EinsteUungsgeschwindigkeit bzw. die Empfindlichkeit der Selenzelle beim Belichten und Verdunkeln erhöht wird. Es kann also durch die Beimengung von Selenid verhindert werden, daß die fertige Zelle eine allzu große Trägheit besitzt. Die Menge des Selenids darf aber höchstens 0,05 bis 0,1 o/o betragen, weil andernfalls der Widerstand der Zelle im Dunkeln zu niedrig wäre und dadurch die Lichtempfindlichkeit herabgesetzt würde.The invention relates to a method for producing selenium cells. It is known to produce selenium cells by depositing the selenium in vapor form on the electrodes. Furthermore, it is already known to add so-called selenides to the selenium, which, as is known, increase the adjustment speed or the sensitivity of the selenium cell during exposure and darkening. The addition of selenide can prevent the finished cell from becoming too inert. However, the amount of selenide must not exceed 0.05 to 0.1 o / o , because otherwise the resistance of the cell in the dark would be too low and the photosensitivity would be reduced as a result.
Bekanntlich vereinigt sich das Selen mit fast allen Metallen zu Seleniden; eine Ausnähme hiervon bilden jedoch das Aluminium sowie Platin und noch einige andere Edelmetalle. Schlägt man daher das Selen auf solchen Metallen nieder, mit denen es Selenide zu bilden sucht, so ist es ganz unmöglich, im voraus zu bestimmen, wie groß die Menge des Selenids sein wird und welches also die elektrischen Eigenschaften der fertigen Selenzelle sein werden. Die Erfindung bezweckt, diese Unsicherheit zu vermeiden und es zu ermöglichen, Selenzellen herzustellen, welche genau die vorher bestimmten elektrischen Eigenschaften besitzen.It is well known that selenium combines with almost all metals to form selenides; an exception Of these, however, form aluminum as well as platinum and a few other precious metals. If, therefore, the selenium is deposited on such metals with which it is selenide seeks to form, it is quite impossible to determine in advance how great the amount will be of selenide and what the electrical properties of the finished selenium cell will be will be. The invention aims to avoid this uncertainty and to do so enable selenium cells to be produced, which exactly have the previously determined electrical Possess properties.
Erfindungsgemäß werden zu diesem Zwecke Elektroden verwendet, welche aus Kohle oder solchen Metallen bestehen, welche sich nicht mit dem Selen zu Seleniden zu vereinigen vermögen. Es werden jedoch gemäß der Erfindung diese Elektroden mit einer dünnen Schicht «ines solchen Metalls versehen, welches sich mit dem Selen zu einem Selenid zu vereinigen sucht. Insbesondere kommt hierbei Silber in Frage. Diese Schicht, also beispielsweise eine Silberschicht, kann hierbei entweder auf galvanoplastischem Wege oder durch das sogenannte keramische Einbrennverfahren auf den Elektroden angebracht werden, wobei die Dicke dieser Silberschicht im voraus genau bestimmbar ist. Beim Anbringen des Selens auf der mit der dünnen Zwischenschicht versehenen Elektrode bilden sich nun die erwähnten Selenide, und es ist möglich, durch genaue Bemessung sowohl der Zwischenschicht als auch des Selenniederschlages die Beimengung an Selenid genau vorherzubestimmen. Außerdem aber hat dieses Verfahren noch den Vorteil, daß infolge der Beimengung von Selenid die Selenschicht weit besser auf den Elektroden haftet als eine Selenschicht, welche keine Selenidbeimengung besitzt.According to the invention electrodes are used for this purpose, which are made of carbon or those metals exist which do not combine with selenium to form selenides capital. However, according to the invention, these electrodes are provided with a thin one A layer of such a metal is provided which, with the selenium, forms a selenide seek to unite. In particular, silver comes into question here. This layer, for example a silver layer, can be done either by electroplating or by the so-called ceramic baking process can be applied to the electrodes, the thickness of this silver layer being precisely determinable in advance. When attaching of the selenium on the electrode provided with the thin intermediate layer, the selenides mentioned are now formed, and it is possible through precise measurement of both the intermediate layer and the selenium precipitate the addition of selenide to be precisely determined in advance. In addition, this method has the advantage that as a result the addition of selenide, the selenium layer adheres much better to the electrodes as a selenium layer which does not contain any selenide.
Der Erfindungsgegenstand hat den Vorteil, daß man die Selenschicht in bekannter Weise durch Verdampfen auf die Elektroden bringen und trotzdem genau die gewünschte Beimengung von Selenid erhalten kann. Man kann auch gegebenenfalls die zum Bilden des Selenids erforderliche Schicht, also beispielsweise eine Silberschicht, zwischen denThe subject matter of the invention has the advantage that the selenium layer can be used in a known manner bring it to the electrodes by evaporation and still have exactly the desired admixture can get from selenide. You can also use those for forming if necessary of the selenide required layer, for example a silver layer, between the
Elektroden auf dem isolierenden Träger anbringen, so daß sich dann beim Niederschlagen des Selens die gewünschten Selenide an der richtigen Stelle von selbst bilden,Apply electrodes to the insulating support so that when it is deposited of selenium form the desired selenides in the right place by themselves,
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET37544D DE573811C (en) | 1929-09-09 | 1929-09-10 | Process for the production of selenium cells |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET0037544 | 1929-09-09 | ||
| DET37544D DE573811C (en) | 1929-09-09 | 1929-09-10 | Process for the production of selenium cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE573811C true DE573811C (en) | 1933-04-06 |
Family
ID=26000415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DET37544D Expired DE573811C (en) | 1929-09-09 | 1929-09-10 | Process for the production of selenium cells |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE573811C (en) |
-
1929
- 1929-09-10 DE DET37544D patent/DE573811C/en not_active Expired
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