DE4304273A1 - - Google Patents

Info

Publication number
DE4304273A1
DE4304273A1 DE4304273A DE4304273A DE4304273A1 DE 4304273 A1 DE4304273 A1 DE 4304273A1 DE 4304273 A DE4304273 A DE 4304273A DE 4304273 A DE4304273 A DE 4304273A DE 4304273 A1 DE4304273 A1 DE 4304273A1
Authority
DE
Germany
Prior art keywords
substrate
region
gate electrode
thyristor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE4304273A
Other languages
German (de)
English (en)
Other versions
DE4304273C2 (de
Inventor
Mitsuru Mariyama
Nobuyuki Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18370692A external-priority patent/JP2863041B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE4304273A1 publication Critical patent/DE4304273A1/de
Application granted granted Critical
Publication of DE4304273C2 publication Critical patent/DE4304273C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Thyristors (AREA)
DE4304273A 1992-02-14 1993-02-12 Schalt-Bauelement Expired - Fee Related DE4304273C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2813092 1992-02-14
JP18370692A JP2863041B2 (ja) 1992-02-14 1992-07-10 スイッチング素子

Publications (2)

Publication Number Publication Date
DE4304273A1 true DE4304273A1 (enExample) 1993-08-19
DE4304273C2 DE4304273C2 (de) 1999-06-10

Family

ID=26366175

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4304273A Expired - Fee Related DE4304273C2 (de) 1992-02-14 1993-02-12 Schalt-Bauelement

Country Status (2)

Country Link
US (1) US5293051A (enExample)
DE (1) DE4304273C2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19807569C2 (de) * 1997-02-24 2001-07-26 Sharp Kk Zweirichtungs-Thyristor-Vorrichtung

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372955A (en) * 1993-08-02 1994-12-13 United Microelectronics Corporation Method of making a device with protection from short circuits between P and N wells
DE69530881D1 (de) * 1994-03-18 2003-07-03 Hitachi Ltd Halbleiteranordnung mit einem lateralen Bipolartransistor
US5629536A (en) * 1995-11-21 1997-05-13 Motorola, Inc. High voltage current limiter and method for making
US5686857A (en) * 1996-02-06 1997-11-11 Motorola, Inc. Zero-crossing triac and method
US5841176A (en) * 1996-03-01 1998-11-24 Foveonics, Inc. Active pixel sensor cell that minimizes leakage current
US20010048140A1 (en) * 1997-04-10 2001-12-06 Inao Toyoda Photo sensing integrated circuit device and related circuit adjustment
DE69838978D1 (de) * 1998-06-19 2008-02-21 St Microelectronics Srl Monolitische integrierte Anordnung mit Schutzstruktur
TW451423B (en) * 2000-02-01 2001-08-21 Ind Tech Res Inst Latch-up structure for improving CMOS processing using latch-up ion implantation and the manufacturing method thereof
FR2819102B1 (fr) * 2000-12-29 2003-04-04 St Microelectronics Sa Commutateur electronique bidirectionnel bistable a commande par impulsions
US10411694B2 (en) 2016-07-22 2019-09-10 Abb Schweiz Ag Solid state switch system
US10554201B2 (en) 2016-07-22 2020-02-04 Abb Schweiz Ag Solid state switch system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489340A (en) * 1980-02-04 1984-12-18 Nippon Telegraph & Telephone Public Corporation PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
US4612562A (en) * 1984-06-05 1986-09-16 Kabushiki Kaisha Toshiba PNPN switch device with capacitor formed outside active device areas

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622568A (en) * 1984-05-09 1986-11-11 Eaton Corporation Planar field-shaped bidirectional power FET

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489340A (en) * 1980-02-04 1984-12-18 Nippon Telegraph & Telephone Public Corporation PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
US4612562A (en) * 1984-06-05 1986-09-16 Kabushiki Kaisha Toshiba PNPN switch device with capacitor formed outside active device areas

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19807569C2 (de) * 1997-02-24 2001-07-26 Sharp Kk Zweirichtungs-Thyristor-Vorrichtung

Also Published As

Publication number Publication date
DE4304273C2 (de) 1999-06-10
US5293051A (en) 1994-03-08

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee