DE4212511C2 - Lineares CCD - Google Patents

Lineares CCD

Info

Publication number
DE4212511C2
DE4212511C2 DE4212511A DE4212511A DE4212511C2 DE 4212511 C2 DE4212511 C2 DE 4212511C2 DE 4212511 A DE4212511 A DE 4212511A DE 4212511 A DE4212511 A DE 4212511A DE 4212511 C2 DE4212511 C2 DE 4212511C2
Authority
DE
Germany
Prior art keywords
charge transport
linear ccd
signal
ccd
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4212511A
Other languages
German (de)
English (en)
Other versions
DE4212511A1 (de
Inventor
Yong Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intellectual Ventures II LLC
Original Assignee
Goldstar Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Electron Co Ltd filed Critical Goldstar Electron Co Ltd
Publication of DE4212511A1 publication Critical patent/DE4212511A1/de
Application granted granted Critical
Publication of DE4212511C2 publication Critical patent/DE4212511C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/152—One-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE4212511A 1991-04-15 1992-04-14 Lineares CCD Expired - Lifetime DE4212511C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910006020A KR940001404B1 (ko) 1991-04-15 1991-04-15 더미 hccd구조

Publications (2)

Publication Number Publication Date
DE4212511A1 DE4212511A1 (de) 1992-10-22
DE4212511C2 true DE4212511C2 (de) 1997-07-03

Family

ID=19313293

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4212511A Expired - Lifetime DE4212511C2 (de) 1991-04-15 1992-04-14 Lineares CCD

Country Status (4)

Country Link
JP (1) JP2708115B2 (enrdf_load_stackoverflow)
KR (1) KR940001404B1 (enrdf_load_stackoverflow)
DE (1) DE4212511C2 (enrdf_load_stackoverflow)
TW (1) TW239902B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100529562B1 (ko) * 1998-04-30 2006-02-08 삼성전자주식회사 다수개의 수리 선을 갖는 액정 표시 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2508668B2 (ja) * 1986-11-10 1996-06-19 ソニー株式会社 電荷転送装置

Also Published As

Publication number Publication date
TW239902B (enrdf_load_stackoverflow) 1995-02-01
JPH06216162A (ja) 1994-08-05
KR940001404B1 (ko) 1994-02-21
KR920020745A (ko) 1992-11-21
JP2708115B2 (ja) 1998-02-04
DE4212511A1 (de) 1992-10-22

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: TAUCHNER, P., DIPL.-CHEM. DR.RER.NAT. HEUNEMANN, D

D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR

8327 Change in the person/name/address of the patent owner

Owner name: MAGNACHIP SEMICONDUCTOR, LTD., CHEONGJU, KR

8327 Change in the person/name/address of the patent owner

Owner name: CROSSTEK CAPITAL, LLC, WILMINGTON, DEL., US

R071 Expiry of right
R071 Expiry of right