DE4107331B4 - Infrarotstrahlungsquantendetektor - Google Patents

Infrarotstrahlungsquantendetektor Download PDF

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Publication number
DE4107331B4
DE4107331B4 DE4107331A DE4107331A DE4107331B4 DE 4107331 B4 DE4107331 B4 DE 4107331B4 DE 4107331 A DE4107331 A DE 4107331A DE 4107331 A DE4107331 A DE 4107331A DE 4107331 B4 DE4107331 B4 DE 4107331B4
Authority
DE
Germany
Prior art keywords
detector
detector elements
radiation
quantum
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4107331A
Other languages
German (de)
English (en)
Other versions
DE4107331A1 (de
Inventor
Dayton Dale Dallas Eden
William Edward Arlington Case
Thomas Robert Ovilla Schimert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lockheed Martin Corp
Original Assignee
Lockheed Corp
Lockheed Martin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to CA002036874A priority Critical patent/CA2036874A1/en
Application filed by Lockheed Corp, Lockheed Martin Corp filed Critical Lockheed Corp
Priority to DE4107331A priority patent/DE4107331B4/de
Priority to IT1991RM000248A priority patent/IT1314365B1/it
Priority to FR9110580A priority patent/FR2803948B1/fr
Priority to GB9119200A priority patent/GB2348539B/en
Priority to JP80000792A priority patent/JP2001318157A/ja
Publication of DE4107331A1 publication Critical patent/DE4107331A1/de
Application granted granted Critical
Publication of DE4107331B4 publication Critical patent/DE4107331B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0837—Microantennas, e.g. bow-tie
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/006—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/062—Two dimensional planar arrays using dipole aerials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measurement Of Radiation (AREA)
DE4107331A 1991-02-22 1991-03-07 Infrarotstrahlungsquantendetektor Expired - Fee Related DE4107331B4 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CA002036874A CA2036874A1 (en) 1991-02-22 1991-02-22 Bandgap radiation detector and method of fabrication
DE4107331A DE4107331B4 (de) 1991-02-22 1991-03-07 Infrarotstrahlungsquantendetektor
IT1991RM000248A IT1314365B1 (it) 1991-02-22 1991-04-11 Rivelatore di radiazioni nell'infrarosso e relativo metodo difabbricazione
FR9110580A FR2803948B1 (fr) 1991-02-22 1991-08-23 Detecteur de rayonnement, notamment de rayonnement infrarouge, et procede pour sa fabrication
GB9119200A GB2348539B (en) 1991-02-22 1991-09-09 Bandgap radiation detector and method of fabrication
JP80000792A JP2001318157A (ja) 1991-02-22 1992-04-20 バンドギャップ放射線検出器

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
CA002036874A CA2036874A1 (en) 1991-02-22 1991-02-22 Bandgap radiation detector and method of fabrication
DE4107331A DE4107331B4 (de) 1991-02-22 1991-03-07 Infrarotstrahlungsquantendetektor
IT1991RM000248A IT1314365B1 (it) 1991-02-22 1991-04-11 Rivelatore di radiazioni nell'infrarosso e relativo metodo difabbricazione
FR9110580A FR2803948B1 (fr) 1991-02-22 1991-08-23 Detecteur de rayonnement, notamment de rayonnement infrarouge, et procede pour sa fabrication
GB9119200A GB2348539B (en) 1991-02-22 1991-09-09 Bandgap radiation detector and method of fabrication
JP80000792A JP2001318157A (ja) 1991-02-22 1992-04-20 バンドギャップ放射線検出器

Publications (2)

Publication Number Publication Date
DE4107331A1 DE4107331A1 (de) 2003-07-03
DE4107331B4 true DE4107331B4 (de) 2005-11-17

Family

ID=28046955

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4107331A Expired - Fee Related DE4107331B4 (de) 1991-02-22 1991-03-07 Infrarotstrahlungsquantendetektor

Country Status (6)

Country Link
JP (1) JP2001318157A (show.php)
CA (1) CA2036874A1 (show.php)
DE (1) DE4107331B4 (show.php)
FR (1) FR2803948B1 (show.php)
GB (1) GB2348539B (show.php)
IT (1) IT1314365B1 (show.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053734B2 (en) * 2009-04-30 2011-11-08 Raytehon Company Nano-antenna for wideband coherent conformal IR detector arrays
US7923689B2 (en) * 2009-04-30 2011-04-12 Raytheon Company Multi-band sub-wavelength IR detector having frequency selective slots and method of making the same
CN114649428B (zh) * 2022-03-23 2023-02-17 中国科学院半导体研究所 新型二维/三维异质异构的高速光电探测器及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207801A (en) * 1979-07-30 1989-02-08 Secr Defence Thermal imaging devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445050A (en) * 1981-12-15 1984-04-24 Marks Alvin M Device for conversion of light power to electric power
EP0018744B1 (en) * 1979-05-01 1984-07-18 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Radiation detectors
US4327291A (en) * 1980-06-16 1982-04-27 Texas Instruments Incorporated Infrared charge injection device imaging system
GB2095900B (en) * 1981-03-30 1985-01-09 Philips Electronic Associated Imaging devices and systems
DE3200853A1 (de) * 1982-01-14 1983-07-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung
GB2207802B (en) * 1982-08-27 1989-06-01 Philips Electronic Associated Thermal-radiation imaging devices and systems,and the manufacture of such imaging devices
US5248884A (en) * 1983-10-11 1993-09-28 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Infrared detectors
US4888597A (en) * 1987-12-14 1989-12-19 California Institute Of Technology Millimeter and submillimeter wave antenna structure
GB2239555B (en) * 1989-03-01 1993-02-24 Philips Electronic Associated Infrared image-sensing devices and their manufacture
JPH0321078A (ja) * 1989-06-19 1991-01-29 Fujitsu Ltd 赤外線検知素子
JP2773930B2 (ja) * 1989-10-31 1998-07-09 三菱電機株式会社 光検知装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207801A (en) * 1979-07-30 1989-02-08 Secr Defence Thermal imaging devices

Non-Patent Citations (12)

* Cited by examiner, † Cited by third party
Title
Group on Infrared Detectors", 6-8. August 1985, Vol.2, S.123-132;$
"Semiconductors and Semimetals", Vol.18, Mercury Cadmmium Telluride, Acedamic Press, 1981, S.162- 163 *
Anthomy F.Garito und Kenneth H.Singer: "Organic Crystals and Polymers-A new Class of Nonlinear Optical Materials", Laserfocus, Februar 1982, S.59 -64
Anthomy F.Garito und Kenneth H.Singer: "Organic Crystals and Polymers-A new Class of Nonlinear Optical Materials", Laserfocus, Februar 1982, S.59-64 *
D.L.Smith, D.K.Arch, P.A.Wood und M. Walter Scott: "HgCdTe Heterojunction Contact Photoconductor", Appl. Physics Letters 45(1), 1.Juli 1984, S.83-85
D.L.Smith, D.K.Arch, P.A.Wood und M. Walter Scott:"HgCdTe Heterojunction Contact Photoconductor", Appl. Physics Letters 45(1), 1.Juli 1984, S.83-85 *
G.M.Metze, D.L.Spears und N.P.Wals: "Selective Etching of CdTe and ZnCdTe Epilayers", in "Procee- dings of the 1985 Meeting of the IRIS Specialty
G.M.Metze, D.L.Spears und N.P.Wals: "Selective Etching of CdTe and ZnCdTe Epilayers", in "Procee-dings of the 1985 Meeting of the IRIS Specialty *
Gottfried H.Dohler: "Solid State Superlattices", Scientific American November 1983
J.P.Fauve, S.Sivananthan, M.Boukerche und J.Reno: "Molecular Beam Epitaxial Growth of High Quality HgTe u. Hg¶1-x¶Cd¶x¶Te onto GaAs(001) Substrates",Applied Physics Letters 45(12), vom 15.Dezember 1984 *
J.P.Fauve, S.Sivananthan, M.Boukerche und J.Reno: "Molecular Beam Epitaxial Growth of High Quality HgTe u. Hg1-xCdxTe onto GaAs(001) Substrates", Applied Physics Letters 45(12), vom 15.Dezember 1984
ottfried H.Dohler: "Solid State Superlattices", Scientific American November 1983 *

Also Published As

Publication number Publication date
GB2348539B (en) 2001-02-21
DE4107331A1 (de) 2003-07-03
ITRM910248A1 (it) 1992-10-11
CA2036874A1 (en) 2002-07-10
GB2348539A (en) 2000-10-04
GB9119200D0 (en) 2000-08-23
JP2001318157A (ja) 2001-11-16
ITRM910248A0 (show.php) 1991-04-11
FR2803948A1 (fr) 2001-07-20
FR2803948B1 (fr) 2003-01-31
IT1314365B1 (it) 2002-12-09

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee