DE4020816C2 - - Google Patents

Info

Publication number
DE4020816C2
DE4020816C2 DE4020816A DE4020816A DE4020816C2 DE 4020816 C2 DE4020816 C2 DE 4020816C2 DE 4020816 A DE4020816 A DE 4020816A DE 4020816 A DE4020816 A DE 4020816A DE 4020816 C2 DE4020816 C2 DE 4020816C2
Authority
DE
Germany
Prior art keywords
particles
substrate
thin film
extracting
extracted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4020816A
Other languages
German (de)
English (en)
Other versions
DE4020816A1 (de
Inventor
Tetsuo Kawasaki Jp Matsuda
Haruo Tokio/Tokyo Jp Okano
Tokuhisa Yokohama Jp Ohiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE4020816A1 publication Critical patent/DE4020816A1/de
Application granted granted Critical
Publication of DE4020816C2 publication Critical patent/DE4020816C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
DE4020816A 1989-06-29 1990-06-29 Verfahren und vorrichtung zur duennschichterzeugung Granted DE4020816A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16815389 1989-06-29

Publications (2)

Publication Number Publication Date
DE4020816A1 DE4020816A1 (de) 1991-01-03
DE4020816C2 true DE4020816C2 (https=) 1992-08-13

Family

ID=15862802

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4020816A Granted DE4020816A1 (de) 1989-06-29 1990-06-29 Verfahren und vorrichtung zur duennschichterzeugung

Country Status (4)

Country Link
US (2) US5094879A (https=)
JP (1) JPH03111578A (https=)
KR (1) KR930006301B1 (https=)
DE (1) DE4020816A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4204650C1 (https=) * 1992-02-15 1993-07-08 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US6531193B2 (en) * 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
NL1019781C2 (nl) * 2002-01-18 2003-07-21 Tno Deklaag alsmede werkwijzen en inrichtingen voor de vervaardiging daarvan.
KR100455430B1 (ko) * 2002-03-29 2004-11-06 주식회사 엘지이아이 열교환기 표면처리장비의 냉각장치 및 그 제조방법
FI116382B (fi) * 2003-04-22 2005-11-15 Liekki Oy Menetelmä hiukkasten varaamiseksi materiaalin valmistusprosessissa sekä hiukkasten varauslaite
JP4493926B2 (ja) * 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US20050254902A1 (en) * 2004-05-17 2005-11-17 Rude Richard J Protective cover for marine mooring bumper
TWI275327B (en) * 2005-09-13 2007-03-01 Quanta Display Inc Apparatus for producing atomic beam
WO2007059027A2 (en) * 2005-11-11 2007-05-24 Dsg Technologies Thermal processing system, components, and methods
US8818322B2 (en) 2006-06-09 2014-08-26 Trapeze Networks, Inc. Untethered access point mesh system and method
US20090078202A1 (en) * 2007-09-26 2009-03-26 Neocera, Llc Substrate heater for material deposition
US8372489B2 (en) * 2007-09-28 2013-02-12 Tel Epion Inc. Method for directional deposition using a gas cluster ion beam
US7794798B2 (en) * 2007-09-29 2010-09-14 Tel Epion Inc. Method for depositing films using gas cluster ion beam processing
US20090233004A1 (en) * 2008-03-17 2009-09-17 Tel Epion Inc. Method and system for depositing silicon carbide film using a gas cluster ion beam
US8202435B2 (en) * 2008-08-01 2012-06-19 Tel Epion Inc. Method for selectively etching areas of a substrate using a gas cluster ion beam
US8048788B2 (en) * 2009-10-08 2011-11-01 Tel Epion Inc. Method for treating non-planar structures using gas cluster ion beam processing
US20110084214A1 (en) * 2009-10-08 2011-04-14 Tel Epion Inc. Gas cluster ion beam processing method for preparing an isolation layer in non-planar gate structures
US8237136B2 (en) * 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
CN102637572A (zh) * 2011-02-15 2012-08-15 上海凯世通半导体有限公司 离子注入设备
US8841574B1 (en) * 2013-11-18 2014-09-23 Georges J. Gorin Plasma extension and concentration apparatus and method
KR20180003254U (ko) 2017-05-11 2018-11-21 김종철 방충 원단 및 방충복과 방충 이불

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713178A (en) * 1980-06-27 1982-01-23 Futaba Corp Method and device for surface treatment
US4440108A (en) * 1982-09-24 1984-04-03 Spire Corporation Ion beam coating apparatus
JPS60221566A (ja) * 1984-04-18 1985-11-06 Agency Of Ind Science & Technol 薄膜形成装置
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
US4740267A (en) * 1987-02-20 1988-04-26 Hughes Aircraft Company Energy intensive surface reactions using a cluster beam
DE3877405T2 (de) * 1987-04-20 1993-05-06 Nissin Electric Co Ltd Verfahren zur herstellung einer supraleitenden duennen schicht und anordnung zu seiner durchfuehrung.
GB8719794D0 (en) * 1987-08-21 1987-09-30 Scient Coatings Uk Ltd Depositing surface layers on substrates
US4800100A (en) * 1987-10-27 1989-01-24 Massachusetts Institute Of Technology Combined ion and molecular beam apparatus and method for depositing materials

Also Published As

Publication number Publication date
KR930006301B1 (ko) 1993-07-12
JPH03111578A (ja) 1991-05-13
DE4020816A1 (de) 1991-01-03
KR910001890A (ko) 1991-01-31
US5658389A (en) 1997-08-19
US5094879A (en) 1992-03-10

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee