DE3929847C2 - - Google Patents
Info
- Publication number
- DE3929847C2 DE3929847C2 DE3929847A DE3929847A DE3929847C2 DE 3929847 C2 DE3929847 C2 DE 3929847C2 DE 3929847 A DE3929847 A DE 3929847A DE 3929847 A DE3929847 A DE 3929847A DE 3929847 C2 DE3929847 C2 DE 3929847C2
- Authority
- DE
- Germany
- Prior art keywords
- switching element
- dielectric
- tantalum
- counter electrode
- structuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 claims description 22
- 238000005496 tempering Methods 0.000 claims description 19
- 229910052715 tantalum Inorganic materials 0.000 claims description 14
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 12
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 239000004973 liquid crystal related substance Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Liquid Crystal (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3929847A DE3929847A1 (de) | 1989-09-08 | 1989-09-08 | Verfahren zur herstellung eines elektronischen schaltelementes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3929847A DE3929847A1 (de) | 1989-09-08 | 1989-09-08 | Verfahren zur herstellung eines elektronischen schaltelementes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3929847A1 DE3929847A1 (de) | 1991-05-08 |
| DE3929847C2 true DE3929847C2 (ja) | 1993-08-19 |
Family
ID=6388890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3929847A Granted DE3929847A1 (de) | 1989-09-08 | 1989-09-08 | Verfahren zur herstellung eines elektronischen schaltelementes |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3929847A1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR950010661B1 (ko) * | 1992-11-07 | 1995-09-21 | 엘지전자주식회사 | 티에프티 엘씨디(tft-lcd)용 신호선 제조방법 및 구조 |
| DE19538128C1 (de) * | 1995-10-13 | 1997-02-27 | Lueder Ernst | Verfahren zur Herstellung eines elektronischen Schaltelementes |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1252818B (ja) * | 1962-03-22 | 1900-01-01 | ||
| US3795977A (en) * | 1971-12-30 | 1974-03-12 | Ibm | Methods for fabricating bistable resistors |
| FI91575C (fi) * | 1986-12-08 | 1994-07-11 | Rca Corp | Diodi, jossa on sekaoksidieristin |
-
1989
- 1989-09-08 DE DE3929847A patent/DE3929847A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3929847A1 (de) | 1991-05-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |