DE3882121D1 - Verfahren zur kontrolle einer schmelzzone. - Google Patents

Verfahren zur kontrolle einer schmelzzone.

Info

Publication number
DE3882121D1
DE3882121D1 DE8888120177T DE3882121T DE3882121D1 DE 3882121 D1 DE3882121 D1 DE 3882121D1 DE 8888120177 T DE8888120177 T DE 8888120177T DE 3882121 T DE3882121 T DE 3882121T DE 3882121 D1 DE3882121 D1 DE 3882121D1
Authority
DE
Germany
Prior art keywords
controlling
melting zone
melting
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888120177T
Other languages
English (en)
Other versions
DE3882121T2 (de
Inventor
Kenichi Taguchi
Masataka Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE3882121D1 publication Critical patent/DE3882121D1/de
Publication of DE3882121T2 publication Critical patent/DE3882121T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE88120177T 1987-12-05 1988-12-02 Verfahren zur Kontrolle einer Schmelzzone. Expired - Fee Related DE3882121T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62308277A JPH0651599B2 (ja) 1987-12-05 1987-12-05 浮遊帯域制御方法

Publications (2)

Publication Number Publication Date
DE3882121D1 true DE3882121D1 (de) 1993-08-05
DE3882121T2 DE3882121T2 (de) 1993-10-28

Family

ID=17979091

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88120177T Expired - Fee Related DE3882121T2 (de) 1987-12-05 1988-12-02 Verfahren zur Kontrolle einer Schmelzzone.

Country Status (4)

Country Link
US (1) US4931945A (de)
EP (1) EP0319858B1 (de)
JP (1) JPH0651599B2 (de)
DE (1) DE3882121T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006052961B4 (de) * 2005-11-10 2012-02-16 Shin-Etsu Handotai Co., Ltd. Verfahren zur Herstellung eines Halbleiterkristalls

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563808A (en) * 1993-05-03 1996-10-08 General Electric Company Pilger mill mandrel measuring device
JP3601280B2 (ja) * 1997-12-25 2004-12-15 信越半導体株式会社 Ｆｚ法による半導体単結晶の製造方法
SE523237C2 (sv) * 1998-12-04 2004-04-06 Inline Hardening Sweden Ab Anordning för uppvärmning med hjälp av induktion
IL163974A0 (en) * 2003-09-10 2005-12-18 Dana Corp Method for monitoring the performance of a magnetic pulse forming or welding process
JP5142287B2 (ja) * 2008-12-22 2013-02-13 独立行政法人産業技術総合研究所 多結晶材料から単結晶を成長させる方法
JP5246209B2 (ja) * 2010-06-10 2013-07-24 信越半導体株式会社 半導体単結晶棒の製造方法
US9212478B2 (en) 2011-05-20 2015-12-15 Kohler Co. Toilet installation system and method
JP5768764B2 (ja) * 2012-05-30 2015-08-26 信越半導体株式会社 半導体単結晶棒の製造方法
JP2022149310A (ja) * 2021-03-25 2022-10-06 Tdk株式会社 結晶製造方法、結晶製造装置、及び単結晶

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
DE1209551B (de) * 1961-12-07 1966-01-27 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines stabfoermigen Halbleiterkoerpers miteiner Steuerung seines Durchmessers- bzw. Querschnittsverlaufs und Vorrichtung zur Durchfuehrung dieses Verfahrens
BE631568A (de) * 1962-04-27
DE2113720C3 (de) * 1971-03-22 1980-09-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Durchmesserregelung beim tiegellosen Zonenschmelzen von Halbleiterstäben
DD110182A5 (de) * 1972-09-28 1974-12-12
BE795488A (fr) * 1972-09-28 1973-05-29 Siemens Ag Procede de fusion par zones sans creuset d'un barreau semi-conducteur
DE2332968C3 (de) * 1973-06-28 1981-12-10 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Steuerung des durchmessers eines Halbleiterstabes
US4080172A (en) * 1975-12-29 1978-03-21 Monsanto Company Zone refiner automatic control
DE2731250C2 (de) * 1977-07-11 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Regelung des Stabquerschnittes beim tiegellosen Zonenschmelzen eines Halbleiterstabes
JPS5645888A (en) * 1979-09-18 1981-04-25 Nippon Telegr & Teleph Corp <Ntt> Crystal growing method by zone melting
JPS6033299A (ja) * 1983-07-29 1985-02-20 Toshiba Corp 単結晶の製造装置
US4866230A (en) * 1987-04-27 1989-09-12 Shin-Etu Handotai Company, Limited Method of and apparatus for controlling floating zone of semiconductor rod
JPS63269003A (ja) * 1987-04-27 1988-11-07 Shin Etsu Handotai Co Ltd 晶出界面位置検出装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006052961B4 (de) * 2005-11-10 2012-02-16 Shin-Etsu Handotai Co., Ltd. Verfahren zur Herstellung eines Halbleiterkristalls

Also Published As

Publication number Publication date
EP0319858B1 (de) 1993-06-30
DE3882121T2 (de) 1993-10-28
JPH01148778A (ja) 1989-06-12
EP0319858A2 (de) 1989-06-14
US4931945A (en) 1990-06-05
EP0319858A3 (de) 1991-04-10
JPH0651599B2 (ja) 1994-07-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee