DE3875358D1 - Datenspeicherschaltung mit niedriger zugriffszeit. - Google Patents

Datenspeicherschaltung mit niedriger zugriffszeit.

Info

Publication number
DE3875358D1
DE3875358D1 DE8888200281T DE3875358T DE3875358D1 DE 3875358 D1 DE3875358 D1 DE 3875358D1 DE 8888200281 T DE8888200281 T DE 8888200281T DE 3875358 T DE3875358 T DE 3875358T DE 3875358 D1 DE3875358 D1 DE 3875358D1
Authority
DE
Germany
Prior art keywords
data storage
storage circuit
access time
low access
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888200281T
Other languages
English (en)
Other versions
DE3875358T2 (de
Inventor
Bertrand Societe Civ Gabillard
Jean-Noel Societe Civ Patillon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3875358D1 publication Critical patent/DE3875358D1/de
Publication of DE3875358T2 publication Critical patent/DE3875358T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/831—Static information storage system or device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/831—Static information storage system or device
    • Y10S505/833—Thin film type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE8888200281T 1987-02-20 1988-02-16 Datenspeicherschaltung mit niedriger zugriffszeit. Expired - Fee Related DE3875358T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8702232A FR2611300B1 (fr) 1987-02-20 1987-02-20 Circuit de stockage d'informations a faible temps d'acces

Publications (2)

Publication Number Publication Date
DE3875358D1 true DE3875358D1 (de) 1992-11-26
DE3875358T2 DE3875358T2 (de) 1993-04-29

Family

ID=9348136

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888200281T Expired - Fee Related DE3875358T2 (de) 1987-02-20 1988-02-16 Datenspeicherschaltung mit niedriger zugriffszeit.

Country Status (6)

Country Link
US (1) US4916663A (de)
EP (1) EP0280363B1 (de)
JP (1) JPS63207174A (de)
KR (1) KR880010499A (de)
DE (1) DE3875358T2 (de)
FR (1) FR2611300B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0671099B2 (ja) * 1987-12-02 1994-09-07 住友電気工業株式会社 不揮発性記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167791A (en) * 1978-01-25 1979-09-11 Banavar Jayanth R Non-volatile information storage arrays of cryogenic pin diodes
DE3171953D1 (en) * 1980-12-29 1985-09-26 Fujitsu Ltd High electron mobility single heterojunction semiconductor devices and methods of production of such devices
JPS58107679A (ja) * 1981-12-21 1983-06-27 Mitsubishi Electric Corp 電界効果トランジスタ
JPS59103389A (ja) * 1982-12-04 1984-06-14 Nippon Telegr & Teleph Corp <Ntt> 超伝導素子及びその製法
DE3477624D1 (en) * 1984-12-18 1989-05-11 Ibm Low temperature tunneling transistor

Also Published As

Publication number Publication date
EP0280363A1 (de) 1988-08-31
DE3875358T2 (de) 1993-04-29
US4916663A (en) 1990-04-10
KR880010499A (ko) 1988-10-10
FR2611300A1 (fr) 1988-08-26
EP0280363B1 (de) 1992-10-21
FR2611300B1 (fr) 1989-04-21
JPS63207174A (ja) 1988-08-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee