DE3873779D1 - Ladungsdetektionsschaltkreis. - Google Patents
Ladungsdetektionsschaltkreis.Info
- Publication number
- DE3873779D1 DE3873779D1 DE8888100472T DE3873779T DE3873779D1 DE 3873779 D1 DE3873779 D1 DE 3873779D1 DE 8888100472 T DE8888100472 T DE 8888100472T DE 3873779 T DE3873779 T DE 3873779T DE 3873779 D1 DE3873779 D1 DE 3873779D1
- Authority
- DE
- Germany
- Prior art keywords
- detection circuit
- charge detection
- charge
- circuit
- detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62007841A JPH0728395B2 (ja) | 1987-01-16 | 1987-01-16 | 電荷検出回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3873779D1 true DE3873779D1 (de) | 1992-09-24 |
DE3873779T2 DE3873779T2 (de) | 1993-03-11 |
Family
ID=11676833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888100472T Expired - Fee Related DE3873779T2 (de) | 1987-01-16 | 1988-01-14 | Ladungsdetektionsschaltkreis. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0275106B1 (de) |
JP (1) | JPH0728395B2 (de) |
KR (1) | KR900008996B1 (de) |
DE (1) | DE3873779T2 (de) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60128665A (ja) * | 1983-12-16 | 1985-07-09 | Oki Electric Ind Co Ltd | 電荷移送装置 |
JPS6135560A (ja) * | 1984-07-27 | 1986-02-20 | Hitachi Ltd | 半導体装置 |
JPS61187368A (ja) * | 1985-02-15 | 1986-08-21 | Toshiba Corp | 電荷転送装置 |
-
1987
- 1987-01-16 JP JP62007841A patent/JPH0728395B2/ja not_active Expired - Fee Related
-
1988
- 1988-01-14 EP EP88100472A patent/EP0275106B1/de not_active Expired - Lifetime
- 1988-01-14 DE DE8888100472T patent/DE3873779T2/de not_active Expired - Fee Related
- 1988-01-15 KR KR1019880000240A patent/KR900008996B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR900008996B1 (ko) | 1990-12-17 |
EP0275106A3 (en) | 1989-10-11 |
DE3873779T2 (de) | 1993-03-11 |
JPS63177461A (ja) | 1988-07-21 |
KR880009383A (ko) | 1988-09-15 |
EP0275106B1 (de) | 1992-08-19 |
EP0275106A2 (de) | 1988-07-20 |
JPH0728395B2 (ja) | 1995-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |