DE3873779D1 - Ladungsdetektionsschaltkreis. - Google Patents

Ladungsdetektionsschaltkreis.

Info

Publication number
DE3873779D1
DE3873779D1 DE8888100472T DE3873779T DE3873779D1 DE 3873779 D1 DE3873779 D1 DE 3873779D1 DE 8888100472 T DE8888100472 T DE 8888100472T DE 3873779 T DE3873779 T DE 3873779T DE 3873779 D1 DE3873779 D1 DE 3873779D1
Authority
DE
Germany
Prior art keywords
detection circuit
charge detection
charge
circuit
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888100472T
Other languages
English (en)
Other versions
DE3873779T2 (de
Inventor
Tetsuo C O Patent Divis Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3873779D1 publication Critical patent/DE3873779D1/de
Publication of DE3873779T2 publication Critical patent/DE3873779T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816Output structures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
DE8888100472T 1987-01-16 1988-01-14 Ladungsdetektionsschaltkreis. Expired - Fee Related DE3873779T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62007841A JPH0728395B2 (ja) 1987-01-16 1987-01-16 電荷検出回路

Publications (2)

Publication Number Publication Date
DE3873779D1 true DE3873779D1 (de) 1992-09-24
DE3873779T2 DE3873779T2 (de) 1993-03-11

Family

ID=11676833

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888100472T Expired - Fee Related DE3873779T2 (de) 1987-01-16 1988-01-14 Ladungsdetektionsschaltkreis.

Country Status (4)

Country Link
EP (1) EP0275106B1 (de)
JP (1) JPH0728395B2 (de)
KR (1) KR900008996B1 (de)
DE (1) DE3873779T2 (de)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128665A (ja) * 1983-12-16 1985-07-09 Oki Electric Ind Co Ltd 電荷移送装置
JPS6135560A (ja) * 1984-07-27 1986-02-20 Hitachi Ltd 半導体装置
JPS61187368A (ja) * 1985-02-15 1986-08-21 Toshiba Corp 電荷転送装置

Also Published As

Publication number Publication date
KR900008996B1 (ko) 1990-12-17
EP0275106A3 (en) 1989-10-11
DE3873779T2 (de) 1993-03-11
JPS63177461A (ja) 1988-07-21
KR880009383A (ko) 1988-09-15
EP0275106B1 (de) 1992-08-19
EP0275106A2 (de) 1988-07-20
JPH0728395B2 (ja) 1995-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee