DE3855981D1 - Zerstäubungstarget aus Mo-Ta oder W-Ta - Google Patents
Zerstäubungstarget aus Mo-Ta oder W-TaInfo
- Publication number
- DE3855981D1 DE3855981D1 DE3855981T DE3855981T DE3855981D1 DE 3855981 D1 DE3855981 D1 DE 3855981D1 DE 3855981 T DE3855981 T DE 3855981T DE 3855981 T DE3855981 T DE 3855981T DE 3855981 D1 DE3855981 D1 DE 3855981D1
- Authority
- DE
- Germany
- Prior art keywords
- atomization target
- atomization
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62074410A JPS63241164A (ja) | 1987-03-30 | 1987-03-30 | スパッタリングターゲットおよび電気配線用合金膜 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3855981D1 true DE3855981D1 (de) | 1997-09-11 |
DE3855981T2 DE3855981T2 (de) | 1998-01-08 |
Family
ID=13546391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3855981T Expired - Fee Related DE3855981T2 (de) | 1987-03-30 | 1988-03-30 | Zerstäubungstarget aus Mo-Ta oder W-Ta |
Country Status (5)
Country | Link |
---|---|
US (1) | US4963240A (de) |
EP (1) | EP0285130B1 (de) |
JP (1) | JPS63241164A (de) |
KR (1) | KR910003885B1 (de) |
DE (1) | DE3855981T2 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2588293B2 (ja) * | 1989-03-01 | 1997-03-05 | 株式会社東芝 | スパッタリングターゲットおよび金属膜の形成方法 |
US5225364A (en) * | 1989-06-26 | 1993-07-06 | Oki Electric Industry Co., Ltd. | Method of fabricating a thin-film transistor matrix for an active matrix display panel |
US5087297A (en) * | 1991-01-17 | 1992-02-11 | Johnson Matthey Inc. | Aluminum target for magnetron sputtering and method of making same |
JP2677721B2 (ja) * | 1991-05-15 | 1997-11-17 | 功二 橋本 | 高耐食アモルファス合金 |
US5320729A (en) * | 1991-07-19 | 1994-06-14 | Hitachi, Ltd. | Sputtering target |
EP0735152B1 (de) | 1993-12-14 | 2002-04-17 | Kabushiki Kaisha Toshiba | Molybdän-wolfram-material zum verdrahten, molybdän-wolfram-target zum verdrahten, verfahren zu deren herstellung und dünne molybdän-wolfram verdrahtung |
US5687600A (en) * | 1994-10-26 | 1997-11-18 | Johnson Matthey Electronics, Inc. | Metal sputtering target assembly |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
US5778302A (en) * | 1995-09-14 | 1998-07-07 | Tosoh Smd, Inc. | Methods of making Cr-Me sputter targets and targets produced thereby |
US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
US6274015B1 (en) | 1996-12-13 | 2001-08-14 | Honeywell International, Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
US5803342A (en) * | 1996-12-26 | 1998-09-08 | Johnson Matthey Electronics, Inc. | Method of making high purity copper sputtering targets |
JP2000509765A (ja) | 1997-03-19 | 2000-08-02 | ジョンソン マッセイ エレクトロニクス,インク. | バッキングプレートに拡散接合されたni−鍍金ターゲット |
US6451185B2 (en) | 1998-08-12 | 2002-09-17 | Honeywell International Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
US6268284B1 (en) * | 1998-10-07 | 2001-07-31 | Tokyo Electron Limited | In situ titanium aluminide deposit in high aspect ratio features |
US20050183797A1 (en) * | 2004-02-23 | 2005-08-25 | Ranjan Ray | Fine grained sputtering targets of cobalt and nickel base alloys made via casting in metal molds followed by hot forging and annealing and methods of making same |
US7832619B2 (en) * | 2004-02-27 | 2010-11-16 | Howmet Corporation | Method of making sputtering target |
CA2573428C (en) | 2004-07-12 | 2008-04-01 | Cardinal Cg Company | Low-maintenance coatings |
CA2622146C (en) * | 2005-09-12 | 2010-11-30 | Graphic Packaging International, Inc. | Elevated microwave heating construct |
US7837929B2 (en) | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
WO2007121211A2 (en) | 2006-04-11 | 2007-10-25 | Cardinal Cg Company | Photocatalytic coatings having improved low-maintenance properties |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
EP2506678B1 (de) * | 2006-10-16 | 2017-05-10 | Graphic Packaging International, Inc. | Erhöhter Aufbau für Mikrowellenerwärmung |
ATE512064T1 (de) | 2006-10-26 | 2011-06-15 | Graphic Packaging Int Inc | Erhöhte schale für mikrowellenerwärmung |
KR101563197B1 (ko) | 2007-09-14 | 2015-10-26 | 카디날 씨지 컴퍼니 | 관리 용이한 코팅 및 이의 제조방법 |
EP2553342B1 (de) * | 2010-03-29 | 2017-11-01 | Graphic Packaging International, Inc. | Mikrowellenerhitzungsvorrichtung mit nahrungsmitteltrageschale |
US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
WO2012154817A1 (en) | 2011-05-10 | 2012-11-15 | H.C. Starck, Inc. | Composite target |
US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
AT13602U3 (de) | 2013-10-29 | 2014-08-15 | Plansee Se | Sputtering Target und Verfahren zur Herstellung |
US9546837B1 (en) | 2015-10-09 | 2017-01-17 | Bh5773 Ltd | Advanced gun barrel |
WO2017105488A1 (en) * | 2015-12-18 | 2017-06-22 | Intel Corporation | Refractory metal alloy targets for physical vapor deposition |
AT15356U1 (de) | 2016-09-29 | 2017-07-15 | Plansee Se | Sputtering Target |
US10604442B2 (en) | 2016-11-17 | 2020-03-31 | Cardinal Cg Company | Static-dissipative coating technology |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2850385A (en) * | 1955-08-29 | 1958-09-02 | Universal Cyclops Steel Corp | Molybdenum-base alloy |
FR2218633B1 (de) * | 1973-02-19 | 1977-07-22 | Lignes Telegraph Telephon | |
AT365857B (de) * | 1977-09-05 | 1982-02-25 | Jakopic Erich Dr | Anordnung mit einer atom- bzw. molekularstrahlen- quelle nach dem prinzip der zerstaeubung fester materialien |
US4322248A (en) * | 1979-11-15 | 1982-03-30 | Gte Products Corporation | Doped molybdenum-tantalum wire and method for making |
US4444635A (en) * | 1981-07-22 | 1984-04-24 | Hitachi, Ltd. | Film forming method |
DE3149910A1 (de) * | 1981-12-16 | 1983-06-23 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zur kathodenzerstaeubung von mindestens zwei verschiedenen materialien |
JPS5980746A (ja) * | 1982-10-31 | 1984-05-10 | Toho Kinzoku Kk | タンタル・タングステン・モリブデン合金 |
US4613371A (en) * | 1983-01-24 | 1986-09-23 | Gte Products Corporation | Method for making ultrafine metal powder |
JPS61116835A (ja) * | 1984-11-13 | 1986-06-04 | Shinku Yakin Kk | Lsi又は超lsi電極配線材料用スパツタリングタ−ゲツト |
JP2581666B2 (ja) * | 1985-09-06 | 1997-02-12 | 株式会社日立製作所 | 配線構造体の製造方法 |
KR960001554B1 (ko) * | 1990-05-11 | 1996-02-02 | 알. 브록크 제임스 | 골프공 처리 장치 및 그 방법 |
-
1987
- 1987-03-30 JP JP62074410A patent/JPS63241164A/ja active Granted
-
1988
- 1988-03-29 US US07/174,959 patent/US4963240A/en not_active Expired - Fee Related
- 1988-03-30 DE DE3855981T patent/DE3855981T2/de not_active Expired - Fee Related
- 1988-03-30 KR KR1019880003532A patent/KR910003885B1/ko not_active IP Right Cessation
- 1988-03-30 EP EP88105177A patent/EP0285130B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0285130A1 (de) | 1988-10-05 |
JPH0564713B2 (de) | 1993-09-16 |
KR910003885B1 (ko) | 1991-06-15 |
JPS63241164A (ja) | 1988-10-06 |
US4963240A (en) | 1990-10-16 |
EP0285130B1 (de) | 1997-08-06 |
DE3855981T2 (de) | 1998-01-08 |
KR880011365A (ko) | 1988-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |