DE3855097T2 - Spannungsgesteuerter veränderlicher Kondensator und Oszillator - Google Patents

Spannungsgesteuerter veränderlicher Kondensator und Oszillator

Info

Publication number
DE3855097T2
DE3855097T2 DE19883855097 DE3855097T DE3855097T2 DE 3855097 T2 DE3855097 T2 DE 3855097T2 DE 19883855097 DE19883855097 DE 19883855097 DE 3855097 T DE3855097 T DE 3855097T DE 3855097 T2 DE3855097 T2 DE 3855097T2
Authority
DE
Germany
Prior art keywords
oscillator
voltage controlled
variable capacitor
controlled variable
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19883855097
Other languages
English (en)
Other versions
DE3855097D1 (de
Inventor
David Martin Embree
Shawn Michael Logan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE3855097D1 publication Critical patent/DE3855097D1/de
Publication of DE3855097T2 publication Critical patent/DE3855097T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/94Metal-insulator-semiconductors, e.g. MOS
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/366Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
    • H03B5/368Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current the means being voltage variable capacitance diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19883855097 1987-11-27 1988-11-18 Spannungsgesteuerter veränderlicher Kondensator und Oszillator Expired - Fee Related DE3855097T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12613287A 1987-11-27 1987-11-27

Publications (2)

Publication Number Publication Date
DE3855097D1 DE3855097D1 (de) 1996-04-18
DE3855097T2 true DE3855097T2 (de) 1996-10-02

Family

ID=22423148

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883855097 Expired - Fee Related DE3855097T2 (de) 1987-11-27 1988-11-18 Spannungsgesteuerter veränderlicher Kondensator und Oszillator

Country Status (4)

Country Link
EP (1) EP0318210B1 (de)
JP (1) JPH01162381A (de)
CA (1) CA1310078C (de)
DE (1) DE3855097T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5038184A (en) * 1989-11-30 1991-08-06 Xerox Corporation Thin film varactors
EP1290790B1 (de) * 2000-04-06 2009-04-01 Nxp B.V. Abstimmbare filteranordnung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53139959A (en) * 1977-05-13 1978-12-06 Hitachi Ltd Amplifying circuit
JPS5558561A (en) * 1978-10-25 1980-05-01 Hitachi Ltd Semiconductor capacitance element
EP0053213B1 (de) * 1980-11-28 1984-04-04 International Business Machines Corporation Vierpolkondensator, dessen Integrität mit Hilfe eines Gleichstromtests kontrolliert werden kann
US4660001A (en) * 1985-04-22 1987-04-21 Canadian Patents And Development Limited Three-terminal negative admittance network
JPS61269380A (ja) * 1985-05-23 1986-11-28 Nippon Denso Co Ltd 半導体装置

Also Published As

Publication number Publication date
EP0318210A3 (de) 1991-06-05
EP0318210B1 (de) 1996-03-13
EP0318210A2 (de) 1989-05-31
JPH01162381A (ja) 1989-06-26
CA1310078C (en) 1992-11-10
DE3855097D1 (de) 1996-04-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee