DE3853657D1 - Magnetoelektrisches Element und Magnetoelektrischer Apparat. - Google Patents

Magnetoelektrisches Element und Magnetoelektrischer Apparat.

Info

Publication number
DE3853657D1
DE3853657D1 DE3853657T DE3853657T DE3853657D1 DE 3853657 D1 DE3853657 D1 DE 3853657D1 DE 3853657 T DE3853657 T DE 3853657T DE 3853657 T DE3853657 T DE 3853657T DE 3853657 D1 DE3853657 D1 DE 3853657D1
Authority
DE
Germany
Prior art keywords
magnetoelectric
magnetoelectric element
magnetoelectric apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3853657T
Other languages
English (en)
Other versions
DE3853657T2 (de
Inventor
Yutaka C O Patent Div Tomisawa
Tetsuo C O Patent Divisi Ishii
Kazuhiko C O Patent Divi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3853657D1 publication Critical patent/DE3853657D1/de
Publication of DE3853657T2 publication Critical patent/DE3853657T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
DE3853657T 1987-08-31 1988-08-30 Magnetoelektrisches Element und Magnetoelektrischer Apparat. Expired - Lifetime DE3853657T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21726587 1987-08-31
JP62293174A JPH0671104B2 (ja) 1987-08-31 1987-11-20 磁電変換素子と磁電変換装置

Publications (2)

Publication Number Publication Date
DE3853657D1 true DE3853657D1 (de) 1995-06-01
DE3853657T2 DE3853657T2 (de) 1995-08-31

Family

ID=26521924

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853657T Expired - Lifetime DE3853657T2 (de) 1987-08-31 1988-08-30 Magnetoelektrisches Element und Magnetoelektrischer Apparat.

Country Status (5)

Country Link
US (1) US5065204A (de)
EP (1) EP0305978B1 (de)
JP (1) JPH0671104B2 (de)
KR (1) KR910007388B1 (de)
DE (1) DE3853657T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5680280A (en) * 1995-09-11 1997-10-21 Texas Instruments Incorporated Magnetic field sensor using heterojunction bipolar transistors
FR2801970B1 (fr) * 1999-12-07 2002-02-15 St Microelectronics Sa Capteur magnetique de tres haute sensibilite
CN100375308C (zh) * 2001-07-26 2008-03-12 旭化成电子材料元件株式会社 半导体霍尔传感器
JP3769555B2 (ja) 2003-07-10 2006-04-26 Ｎｅｃアクセステクニカ株式会社 携帯型受像装置及び携帯端末装置
CN107294310B (zh) * 2016-04-01 2020-04-03 德昌电机(深圳)有限公司 磁传感器、磁传感器集成电路、电机组件及应用设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3668439A (en) * 1969-09-11 1972-06-06 Mitsubishi Electric Corp Magnetically operated semiconductor device
US3811075A (en) * 1971-05-26 1974-05-14 Matsushita Electric Ind Co Ltd Magneto-sensitive device having pn junction
US4100563A (en) * 1976-09-27 1978-07-11 Motorola, Inc. Semiconductor magnetic transducers
US4654684A (en) * 1981-04-13 1987-03-31 International Business Machines Corp. Magnetically sensitive transistors utilizing Lorentz field potential modultion of carrier injection
US4516144A (en) * 1982-09-23 1985-05-07 Eaton Corporation Columnated and trimmed magnetically sensitive semiconductor
US4689648A (en) * 1983-05-27 1987-08-25 International Business Machines Corporation Magnetically sensitive metal semiconductor devices

Also Published As

Publication number Publication date
KR890004456A (ko) 1989-04-22
DE3853657T2 (de) 1995-08-31
EP0305978A2 (de) 1989-03-08
EP0305978B1 (de) 1995-04-26
KR910007388B1 (ko) 1991-09-25
EP0305978A3 (en) 1989-11-29
JPH0671104B2 (ja) 1994-09-07
US5065204A (en) 1991-11-12
JPH01132184A (ja) 1989-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)