DE3830174A1 - Leitfaehige oberflaechenschicht - Google Patents

Leitfaehige oberflaechenschicht

Info

Publication number
DE3830174A1
DE3830174A1 DE3830174A DE3830174A DE3830174A1 DE 3830174 A1 DE3830174 A1 DE 3830174A1 DE 3830174 A DE3830174 A DE 3830174A DE 3830174 A DE3830174 A DE 3830174A DE 3830174 A1 DE3830174 A1 DE 3830174A1
Authority
DE
Germany
Prior art keywords
surface layer
titanium
layer according
zirconium
metals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3830174A
Other languages
German (de)
English (en)
Other versions
DE3830174C2 (https=
Inventor
Uwe Maixner
Dieter Milferstaedt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GKSS Forshungszentrum Geesthacht GmbH
Original Assignee
GKSS Forshungszentrum Geesthacht GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GKSS Forshungszentrum Geesthacht GmbH filed Critical GKSS Forshungszentrum Geesthacht GmbH
Priority to DE3830174A priority Critical patent/DE3830174A1/de
Priority to EP89115495A priority patent/EP0358040B1/de
Priority to DE58909024T priority patent/DE58909024D1/de
Priority to JP1228456A priority patent/JPH02134883A/ja
Publication of DE3830174A1 publication Critical patent/DE3830174A1/de
Priority to US07/688,380 priority patent/US5298333A/en
Application granted granted Critical
Publication of DE3830174C2 publication Critical patent/DE3830174C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Compositions Of Oxide Ceramics (AREA)
DE3830174A 1988-09-06 1988-09-06 Leitfaehige oberflaechenschicht Granted DE3830174A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE3830174A DE3830174A1 (de) 1988-09-06 1988-09-06 Leitfaehige oberflaechenschicht
EP89115495A EP0358040B1 (de) 1988-09-06 1989-08-23 Leitfähige Oberflächenschicht
DE58909024T DE58909024D1 (de) 1988-09-06 1989-08-23 Leitfähige Oberflächenschicht.
JP1228456A JPH02134883A (ja) 1988-09-06 1989-09-05 導電性表面層
US07/688,380 US5298333A (en) 1988-09-06 1991-04-19 Conductive surface layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3830174A DE3830174A1 (de) 1988-09-06 1988-09-06 Leitfaehige oberflaechenschicht

Publications (2)

Publication Number Publication Date
DE3830174A1 true DE3830174A1 (de) 1990-03-15
DE3830174C2 DE3830174C2 (https=) 1992-06-25

Family

ID=6362329

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3830174A Granted DE3830174A1 (de) 1988-09-06 1988-09-06 Leitfaehige oberflaechenschicht
DE58909024T Expired - Fee Related DE58909024D1 (de) 1988-09-06 1989-08-23 Leitfähige Oberflächenschicht.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE58909024T Expired - Fee Related DE58909024D1 (de) 1988-09-06 1989-08-23 Leitfähige Oberflächenschicht.

Country Status (4)

Country Link
US (1) US5298333A (https=)
EP (1) EP0358040B1 (https=)
JP (1) JPH02134883A (https=)
DE (2) DE3830174A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4023495A1 (de) * 1990-07-24 1992-01-30 Nukem Gmbh Elektronisches bauelement
US6898071B2 (en) 2001-04-26 2005-05-24 Epcos Ag Electrical multilayer component and method for the production thereof
EP1283552A3 (de) * 2001-08-02 2005-10-05 Kistler Holding AG Kristallelement für Piezosensoren
US7154736B2 (en) 2001-05-08 2006-12-26 Epcos Ag Ceramic multi-layer element and a method for the production thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW236710B (https=) * 1994-04-08 1994-12-21
US5815900A (en) * 1995-03-06 1998-10-06 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a surface acoustic wave module
TW476742B (en) * 1996-12-23 2002-02-21 Smh Man Services Ag Zirconia based ceramic article for use as a wear resistant exterior part for a wristwatch, and method for obtaining the same
US6329670B1 (en) 1999-04-06 2001-12-11 Micron Technology, Inc. Conductive material for integrated circuit fabrication
US6635939B2 (en) * 1999-08-24 2003-10-21 Micron Technology, Inc. Boron incorporated diffusion barrier material

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2749696A1 (de) * 1976-12-06 1978-06-08 Ibm Verfahren zum zusammenkitten von kristallen
DE2940200A1 (de) * 1979-09-05 1981-03-19 BBC AG Brown, Boveri & Cie., Baden, Aargau Kontaktanordnung fuer ein halbleiterbauelement
DE3240866A1 (de) * 1981-12-28 1983-07-14 Solid State Devices, Inc., 90638 La Mirada, Calif. Halbleiterbauelement und verfahren zu dessen herstellung
EP0095128A1 (en) * 1982-05-20 1983-11-30 GTE Laboratories Incorporated Coated composite silicon nitride cutting tools
DE3435807A1 (de) * 1984-09-28 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Haft- und bondfaehige metallisierung auf keramik fuer piezowandler
EP0227467A2 (en) * 1985-12-24 1987-07-01 Ford Motor Company Limited Titanium nitride electrodes for thermoelectric generators

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681670A (en) * 1979-12-06 1981-07-03 Seiko Epson Corp Exterior parts for watch
US4426423A (en) * 1981-10-27 1984-01-17 Advanced Technology Inc. Ceramic, cermet or metal composites
JPS5978973A (ja) * 1982-10-27 1984-05-08 株式会社日立製作所 導電性セラミツクス
US4524718A (en) * 1982-11-22 1985-06-25 Gordon Roy G Reactor for continuous coating of glass
US4546050A (en) * 1984-11-23 1985-10-08 Ford Motor Company Coated glass article as a new article of manufacture
DE3509039A1 (de) * 1985-03-14 1986-09-18 W.C. Heraeus Gmbh, 6450 Hanau Verbundwerkstoff fuer elektrische kontakte und verfahren zu seiner herstellung
JPS61230397A (ja) * 1985-04-05 1986-10-14 日本電気株式会社 高熱伝導多層セラミツク配線基板
US4888246A (en) * 1985-05-23 1989-12-19 Matsushita Electric Industrial Co., Ltd. Dielectric thin film, and method for making the thin film
JPS62202868A (ja) * 1986-02-27 1987-09-07 電気化学工業株式会社 導電性セラミツク及びその製造法
US4808462A (en) * 1987-05-22 1989-02-28 Glasstech Solar, Inc. Solar cell substrate
DE3724290A1 (de) * 1987-07-22 1989-02-02 Siemens Ag Elektrode fuer piezoelektrische composites
JPH01225149A (ja) * 1988-03-04 1989-09-08 Toshiba Corp キャパシタ及びその製造方法
DE8811221U1 (de) * 1988-09-06 1988-12-01 Gkss-Forschungszentrum Geesthacht Gmbh, 21502 Geesthacht Leitfähige Elektrodenoberflächenschicht

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2749696A1 (de) * 1976-12-06 1978-06-08 Ibm Verfahren zum zusammenkitten von kristallen
DE2940200A1 (de) * 1979-09-05 1981-03-19 BBC AG Brown, Boveri & Cie., Baden, Aargau Kontaktanordnung fuer ein halbleiterbauelement
DE3240866A1 (de) * 1981-12-28 1983-07-14 Solid State Devices, Inc., 90638 La Mirada, Calif. Halbleiterbauelement und verfahren zu dessen herstellung
EP0095128A1 (en) * 1982-05-20 1983-11-30 GTE Laboratories Incorporated Coated composite silicon nitride cutting tools
DE3435807A1 (de) * 1984-09-28 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Haft- und bondfaehige metallisierung auf keramik fuer piezowandler
EP0227467A2 (en) * 1985-12-24 1987-07-01 Ford Motor Company Limited Titanium nitride electrodes for thermoelectric generators

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JAFFE, Bernard et al: Piezoelectric Ceramics, Academic Press Inc., London und New York, 1971, S. 262-263 *
JAKUBKE, Hans-Dieter, JESCHKEIT, Hans: Fachlexikon ABC Chemie, Bd. 2 L-Z, 3. Aufl., Verlag Harri Deutsch, Thun und Frankfurt/Main, 1987, S. 703 *
NICOLET, M.-A.: Diffusion Barriers in Thin Films. In: Thin Solid Films, 1978, Nr. 52, S. 415-443 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4023495A1 (de) * 1990-07-24 1992-01-30 Nukem Gmbh Elektronisches bauelement
US6898071B2 (en) 2001-04-26 2005-05-24 Epcos Ag Electrical multilayer component and method for the production thereof
US7154736B2 (en) 2001-05-08 2006-12-26 Epcos Ag Ceramic multi-layer element and a method for the production thereof
EP1283552A3 (de) * 2001-08-02 2005-10-05 Kistler Holding AG Kristallelement für Piezosensoren

Also Published As

Publication number Publication date
DE3830174C2 (https=) 1992-06-25
EP0358040A3 (de) 1991-01-30
DE58909024D1 (de) 1995-03-30
EP0358040A2 (de) 1990-03-14
JPH02134883A (ja) 1990-05-23
EP0358040B1 (de) 1995-02-22
US5298333A (en) 1994-03-29

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee