DE3823901C2 - - Google Patents

Info

Publication number
DE3823901C2
DE3823901C2 DE3823901A DE3823901A DE3823901C2 DE 3823901 C2 DE3823901 C2 DE 3823901C2 DE 3823901 A DE3823901 A DE 3823901A DE 3823901 A DE3823901 A DE 3823901A DE 3823901 C2 DE3823901 C2 DE 3823901C2
Authority
DE
Germany
Prior art keywords
ferroelectric
substrate
layer
intermediate layer
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3823901A
Other languages
German (de)
English (en)
Other versions
DE3823901A1 (de
Inventor
Bernd Dr.Rer.Nat. 7550 Rastatt De Ploss
Siegfried Dipl.-Phys. 7507 Pfinztal De Bauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DE3823901A priority Critical patent/DE3823901A1/de
Publication of DE3823901A1 publication Critical patent/DE3823901A1/de
Application granted granted Critical
Publication of DE3823901C2 publication Critical patent/DE3823901C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/387—Devices controllable only by the variation of applied heat
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/098—Forming organic materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE3823901A 1988-07-14 1988-07-14 Verfahren zur herstellung ferroelektrischer festkoerperbauelemente Granted DE3823901A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE3823901A DE3823901A1 (de) 1988-07-14 1988-07-14 Verfahren zur herstellung ferroelektrischer festkoerperbauelemente

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3823901A DE3823901A1 (de) 1988-07-14 1988-07-14 Verfahren zur herstellung ferroelektrischer festkoerperbauelemente

Publications (2)

Publication Number Publication Date
DE3823901A1 DE3823901A1 (de) 1990-02-01
DE3823901C2 true DE3823901C2 (enExample) 1990-10-25

Family

ID=6358678

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3823901A Granted DE3823901A1 (de) 1988-07-14 1988-07-14 Verfahren zur herstellung ferroelektrischer festkoerperbauelemente

Country Status (1)

Country Link
DE (1) DE3823901A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT503306B1 (de) 2006-01-26 2007-09-15 Univ Linz Ferroisches bauelement
CN105203019B (zh) * 2015-10-19 2018-05-29 上海集成电路研发中心有限公司 一种柔性有源压力/应变传感器结构及其制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791761A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Electrical switching and storage
US4024560A (en) * 1975-09-04 1977-05-17 Westinghouse Electric Corporation Pyroelectric-field effect electromagnetic radiation detector
US4328441A (en) * 1980-01-31 1982-05-04 Minnesota Mining And Manufacturing Company Output circuit for piezoelectric polymer pressure sensor
FR2507424A1 (fr) * 1981-06-05 1982-12-10 Cgr Transducteur piezoelectrique autocollant et dispositif de mise en oeuvre du transducteur
DE3425882A1 (de) * 1984-07-13 1986-01-16 Siemens AG, 1000 Berlin und 8000 München Anschlussbaendchen-verbund fuer das kontaktieren von elektrischen bauteilen, vorzugsweise piezo-wandlern
DE3602887A1 (de) * 1986-01-31 1987-08-06 Bayer Ag Nichtfluechtiger elektronischer speicher

Also Published As

Publication number Publication date
DE3823901A1 (de) 1990-02-01

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee