DE3818504A1 - Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial - Google Patents

Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial

Info

Publication number
DE3818504A1
DE3818504A1 DE3818504A DE3818504A DE3818504A1 DE 3818504 A1 DE3818504 A1 DE 3818504A1 DE 3818504 A DE3818504 A DE 3818504A DE 3818504 A DE3818504 A DE 3818504A DE 3818504 A1 DE3818504 A1 DE 3818504A1
Authority
DE
Germany
Prior art keywords
substrate material
melt
layer
tem
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3818504A
Other languages
German (de)
English (en)
Other versions
DE3818504C2 (https=
Inventor
Hermann Sigmund
Christian Stumpf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to DE3818504A priority Critical patent/DE3818504A1/de
Priority to DE89DE8900342A priority patent/DE3990622D2/de
Priority to PCT/DE1989/000342 priority patent/WO1989012317A1/de
Publication of DE3818504A1 publication Critical patent/DE3818504A1/de
Application granted granted Critical
Publication of DE3818504C2 publication Critical patent/DE3818504C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE3818504A 1988-05-31 1988-05-31 Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial Granted DE3818504A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE3818504A DE3818504A1 (de) 1988-05-31 1988-05-31 Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial
DE89DE8900342A DE3990622D2 (en) 1988-05-31 1989-05-30 Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial
PCT/DE1989/000342 WO1989012317A1 (fr) 1988-05-31 1989-05-30 Procede et dispositif pour la cristallisation de couches minces de semi-conducteurs sur un materiau de substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3818504A DE3818504A1 (de) 1988-05-31 1988-05-31 Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial

Publications (2)

Publication Number Publication Date
DE3818504A1 true DE3818504A1 (de) 1991-01-03
DE3818504C2 DE3818504C2 (https=) 1993-03-25

Family

ID=6355519

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3818504A Granted DE3818504A1 (de) 1988-05-31 1988-05-31 Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial
DE89DE8900342A Expired - Lifetime DE3990622D2 (en) 1988-05-31 1989-05-30 Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE89DE8900342A Expired - Lifetime DE3990622D2 (en) 1988-05-31 1989-05-30 Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial

Country Status (2)

Country Link
DE (2) DE3818504A1 (https=)
WO (1) WO1989012317A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1063049A3 (en) * 1999-06-25 2003-03-26 Mitsubishi Denki Kabushiki Kaisha Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same
DE102004042343A1 (de) * 2004-09-01 2006-03-02 Innovavent Gmbh Verfahren und Vorrichtung zur Modifikation von amorphen Halbleitern mittels Laserstrahlung
CN111519256A (zh) * 2020-04-15 2020-08-11 中国科学院上海硅酸盐研究所 一种利用脉冲激光触发形核的方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284431A (ja) * 1997-04-11 1998-10-23 Sharp Corp Ｓｏｉ基板の製造方法
JP4403599B2 (ja) * 1999-04-19 2010-01-27 ソニー株式会社 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法
DE102005043303B4 (de) 2005-09-12 2010-07-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Rekristallisierung von Schichtstrukturen mittels Zonenschmelzen und dessen Verwendung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0109254A2 (en) * 1982-11-13 1984-05-23 Yuk Wah Joseph Koo Single mode pulsed laser
US4589951A (en) * 1981-07-30 1986-05-20 Fujitsu Limited Method for annealing by a high energy beam to form a single-crystal film
DE3620300A1 (de) * 1985-06-18 1986-12-18 Sony Corp., Tokio/Tokyo Verfahren und vorrichtung zur herstellung einkristalliner duennfilme
US4707217A (en) * 1986-05-28 1987-11-17 The United States Of America As Represented By The Secretary Of The Navy Single crystal thin films

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH550646A (de) * 1972-04-20 1974-06-28 Pierres Holding Sa Verfahren zur praezisen bearbeitung von werkstuecken mittels laserstrahlen und vorrichtung zur durchfuehrung des verfahrens.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4589951A (en) * 1981-07-30 1986-05-20 Fujitsu Limited Method for annealing by a high energy beam to form a single-crystal film
EP0109254A2 (en) * 1982-11-13 1984-05-23 Yuk Wah Joseph Koo Single mode pulsed laser
DE3620300A1 (de) * 1985-06-18 1986-12-18 Sony Corp., Tokio/Tokyo Verfahren und vorrichtung zur herstellung einkristalliner duennfilme
US4707217A (en) * 1986-05-28 1987-11-17 The United States Of America As Represented By The Secretary Of The Navy Single crystal thin films

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Applied Physics Letters 40, No.5, 1982, S.394 u. 395 *
BEESLEY, M.J.: Lasers and their Applications, London, Verlag Taylor and Francis Ltd., 1971, S.80, 81 u. 86, 87 *
BRUNNER, W., JUNG, K.: Lasertechnik, 3.Aufl., Heidelberg, Dr. Alfred Hüthig-Verlag, 1987, S.81 u. 175 *
J. Crystal Growth 88, 1988, S.383-390 *
JP 59-102 892 in Patents Abstracts of Japan, Sect. C., Vol.8, 1984, Nr.218, (C-245) *
Laser und Optoelectronic Nr.2/1988, S.60-66 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1063049A3 (en) * 1999-06-25 2003-03-26 Mitsubishi Denki Kabushiki Kaisha Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same
DE102004042343A1 (de) * 2004-09-01 2006-03-02 Innovavent Gmbh Verfahren und Vorrichtung zur Modifikation von amorphen Halbleitern mittels Laserstrahlung
DE102004042343B4 (de) * 2004-09-01 2008-01-31 Innovavent Gmbh Verfahren und Vorrichtung zur Modifikation von amorphen Halbleitern mittels Laserstrahlung
CN111519256A (zh) * 2020-04-15 2020-08-11 中国科学院上海硅酸盐研究所 一种利用脉冲激光触发形核的方法

Also Published As

Publication number Publication date
DE3990622D2 (en) 1992-01-30
DE3818504C2 (https=) 1993-03-25
DE3990622A1 (en) 1992-01-30
WO1989012317A1 (fr) 1989-12-14

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee