DE3815183C2 - - Google Patents
Info
- Publication number
- DE3815183C2 DE3815183C2 DE3815183A DE3815183A DE3815183C2 DE 3815183 C2 DE3815183 C2 DE 3815183C2 DE 3815183 A DE3815183 A DE 3815183A DE 3815183 A DE3815183 A DE 3815183A DE 3815183 C2 DE3815183 C2 DE 3815183C2
- Authority
- DE
- Germany
- Prior art keywords
- gate element
- element according
- substrate
- intermediate piece
- conductor pieces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004020 conductor Substances 0.000 claims description 41
- 239000010408 film Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 6
- 229910002480 Cu-O Inorganic materials 0.000 claims description 5
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 5
- 239000011224 oxide ceramic Substances 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910010252 TiO3 Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 230000000875 corresponding effect Effects 0.000 description 11
- 230000006870 function Effects 0.000 description 9
- 230000004907 flux Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000002887 superconductor Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002561 K2NiF4 Inorganic materials 0.000 description 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/30—Devices switchable between superconducting and normal states
- H10N60/35—Cryotrons
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3815183A DE3815183A1 (de) | 1987-08-20 | 1988-05-04 | Supraleitendes gatterelement fuer eine logische schaltung |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3727821 | 1987-08-20 | ||
| DE3815183A DE3815183A1 (de) | 1987-08-20 | 1988-05-04 | Supraleitendes gatterelement fuer eine logische schaltung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3815183A1 DE3815183A1 (de) | 1989-03-02 |
| DE3815183C2 true DE3815183C2 (enrdf_load_stackoverflow) | 1990-06-07 |
Family
ID=25858843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3815183A Granted DE3815183A1 (de) | 1987-08-20 | 1988-05-04 | Supraleitendes gatterelement fuer eine logische schaltung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3815183A1 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE68906044T2 (de) * | 1988-02-10 | 1993-11-04 | Sharp Kk | Supraleitende logische vorrichtung. |
| EP0569781A1 (de) * | 1992-05-11 | 1993-11-18 | Siemens Aktiengesellschaft | Supraleitungseinrichtung mit zwei Leiterstücken aus Hoch-Tc-Supraleitermaterial und dazwischenliegender Übergangszone |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3726016A1 (de) * | 1987-08-05 | 1989-02-16 | Siemens Ag | Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial |
-
1988
- 1988-05-04 DE DE3815183A patent/DE3815183A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3815183A1 (de) | 1989-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3855245T2 (de) | Supraleiter-Bauelement | |
| DE3876473T2 (de) | Verfahren zur herstellung von supraleitenden quanteninterferometern aus hochtemperatur-supraleitern. | |
| DE69119022T2 (de) | Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung | |
| EP0302354B1 (de) | Verfahren zur Herstellung eines schichtartigen Aufbaus aus einem oxidkeramischen Supraleitermaterial | |
| DE69016283T3 (de) | Substrat mit einer supraleitenden Schicht. | |
| DE69204080T2 (de) | Mikroverbindungsvorrichtung aus Hochtemperatursupraleiter mit gestufter Kante zur Kante SNS Verbindung. | |
| DE69115209T2 (de) | Verfahren zur Herstellung eines Supraleitungsbauelements mit reduzierter Dicke der supraleitenden Oxidschicht und dadurch hergestelltes Supraleitungsbauelement. | |
| DE69032845T2 (de) | Josephsoneffektbauelement des Typs mit Tunnelverbindung und Verfahren zu seiner Herstellung | |
| DE69119190T2 (de) | Supraleitende Einrichtung mit extrem dünnen supraleitenden Kanal aus oxydischem supraleitendem Material und Methode zu deren Herstellung | |
| DE69218348T2 (de) | Supraleitendes Bauelement mit extrem dünnen supraleitenden Kanal und Herstellungsverfahren | |
| DE69218896T2 (de) | Verfahren zur Herstellung eines Josephson-Übergangselements mit Schwach-Kopplung aus künstlichen Korngrenzen | |
| DE69015721T2 (de) | Verfahren zur Herstellung einer supraleitenden Schaltung. | |
| DE3810243C2 (de) | Supraleitende Dünnfilme und Verfahren zu ihrer Herstellung | |
| DE4212028C2 (de) | Korngrenzen-Josephsonelement mit metalloxidischem Hochtemperatursupraleiter-Material, Verfahren zu dessen Herstellung sowie Verwendung des Elementes | |
| DE69123271T2 (de) | Einrichtung mit gestapeltem Josephson-Übergang aus Oxid-Supraleiter Material | |
| DE69017112T2 (de) | Supraleitende Dünnschicht aus Oxid und Verfahren zu deren Herstellung. | |
| DE69125129T2 (de) | Supraleitende Quanten-Interferenz-Einrichtung aus supraleitender oxydischer Dünnschicht | |
| DE69218735T2 (de) | Verfahren zum Herstellen eines künstlichen Josephson-Korngrenzen-Übergangselementes | |
| DE2055606A1 (de) | Dünnschicht Einkristall Bauelement mit Tunneleffekt | |
| DE69318473T2 (de) | Josephson-Uebergangseinrichtung aus oxidischem Supraleiter | |
| DE3815183C2 (enrdf_load_stackoverflow) | ||
| DE69223371T2 (de) | Supraleitende Dünnschicht aus oxidisch supraleitendem Material, supraleitender Strompfad und supraleitende Einrichtung mit der supraleitenden Dünnschicht | |
| DE69118106T2 (de) | Aus extrem dünnem supraleitendem Oxydfilm gebildete supraleitende Einrichtung mit extrem kurzem Kanal und Verfahren zu dessen Herstellung | |
| DE69109054T3 (de) | Supraleitende Einrichtung mit extrem kurzer supraleitender Kanallänge aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung. | |
| DE69218388T2 (de) | Supraleitendes Bauelement mit extrem dünnem Kanal aus supraleitendem Oxyd und sein Herstellungsverfahren |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |