DE3813319A1 - Abgleicheinrichtung - Google Patents
AbgleicheinrichtungInfo
- Publication number
- DE3813319A1 DE3813319A1 DE3813319A DE3813319A DE3813319A1 DE 3813319 A1 DE3813319 A1 DE 3813319A1 DE 3813319 A DE3813319 A DE 3813319A DE 3813319 A DE3813319 A DE 3813319A DE 3813319 A1 DE3813319 A1 DE 3813319A1
- Authority
- DE
- Germany
- Prior art keywords
- diode
- zener
- circuit
- short
- zapp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 238000009966 trimming Methods 0.000 claims description 25
- 230000008859 change Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 22
- 230000000694 effects Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3813319A DE3813319A1 (de) | 1988-04-20 | 1988-04-20 | Abgleicheinrichtung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3813319A DE3813319A1 (de) | 1988-04-20 | 1988-04-20 | Abgleicheinrichtung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3813319A1 true DE3813319A1 (de) | 1989-11-02 |
| DE3813319C2 DE3813319C2 (enrdf_load_stackoverflow) | 1993-02-04 |
Family
ID=6352486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3813319A Granted DE3813319A1 (de) | 1988-04-20 | 1988-04-20 | Abgleicheinrichtung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3813319A1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4207225A1 (de) * | 1992-03-07 | 1993-09-16 | Bosch Gmbh Robert | Integrierte schaltung mit abgleichbauteilen und abgleichbarer thyristor |
| EP1205975A3 (de) * | 2000-11-14 | 2004-06-30 | ELMOS Semiconductor AG | Abgleichelement für integrierte Halbleiterschaltungen |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4016483A (en) * | 1974-06-27 | 1977-04-05 | Rudin Marvin B | Microminiature integrated circuit impedance device including weighted elements and contactless switching means for fixing the impedance at a preselected value |
-
1988
- 1988-04-20 DE DE3813319A patent/DE3813319A1/de active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4016483A (en) * | 1974-06-27 | 1977-04-05 | Rudin Marvin B | Microminiature integrated circuit impedance device including weighted elements and contactless switching means for fixing the impedance at a preselected value |
Non-Patent Citations (4)
| Title |
|---|
| A. Grebene: Bipolaer and MOS Analog Circuit Design, New York: John Wiley & Sons, 1984, S. 155-158 * |
| IBM TDB, Bd. 24, No. 7A, 1981, S. 3305/3306 * |
| IEEE Electron Device Letters, Bd. EDL-5, No. 10, 1984, S. 392-394 * |
| IEEE J. of Solid-State Circ., Vol. SC-22, No. 6, Dez. 1987, S. 1130-1138 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4207225A1 (de) * | 1992-03-07 | 1993-09-16 | Bosch Gmbh Robert | Integrierte schaltung mit abgleichbauteilen und abgleichbarer thyristor |
| US5391951A (en) * | 1992-03-07 | 1995-02-21 | Robert Bosch Gmbh | Integrated circuit having an adjusting component and an adjustable thyristor |
| EP1205975A3 (de) * | 2000-11-14 | 2004-06-30 | ELMOS Semiconductor AG | Abgleichelement für integrierte Halbleiterschaltungen |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3813319C2 (enrdf_load_stackoverflow) | 1993-02-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8125 | Change of the main classification |
Ipc: H01L 27/06 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |