DE3786112D1 - Verfahren zur herstellung mittels plasma von hydridverbindungen und apparat fuer seine durchfuehrung. - Google Patents

Verfahren zur herstellung mittels plasma von hydridverbindungen und apparat fuer seine durchfuehrung.

Info

Publication number
DE3786112D1
DE3786112D1 DE8787103053T DE3786112T DE3786112D1 DE 3786112 D1 DE3786112 D1 DE 3786112D1 DE 8787103053 T DE8787103053 T DE 8787103053T DE 3786112 T DE3786112 T DE 3786112T DE 3786112 D1 DE3786112 D1 DE 3786112D1
Authority
DE
Germany
Prior art keywords
hydrid
plasma
compounds
implementation
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787103053T
Other languages
English (en)
Inventor
John Carter Marinace
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3786112D1 publication Critical patent/DE3786112D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C01B6/06—Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or polonium; Monoborane; Diborane; Addition complexes thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C01B6/06—Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or polonium; Monoborane; Diborane; Addition complexes thereof
    • C01B6/065—Hydrides of arsenic or antimony
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
DE8787103053T 1986-03-14 1987-03-04 Verfahren zur herstellung mittels plasma von hydridverbindungen und apparat fuer seine durchfuehrung. Expired - Lifetime DE3786112D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83976086A 1986-03-14 1986-03-14

Publications (1)

Publication Number Publication Date
DE3786112D1 true DE3786112D1 (de) 1993-07-15

Family

ID=25280561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787103053T Expired - Lifetime DE3786112D1 (de) 1986-03-14 1987-03-04 Verfahren zur herstellung mittels plasma von hydridverbindungen und apparat fuer seine durchfuehrung.

Country Status (3)

Country Link
EP (1) EP0245600B1 (de)
JP (1) JPH0618176B2 (de)
DE (1) DE3786112D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3680029B2 (ja) * 2001-08-08 2005-08-10 三菱重工業株式会社 金属薄膜の気相成長方法およびその気相成長装置
KR100960355B1 (ko) * 2008-03-05 2010-05-28 한화케미칼 주식회사 수소 저장 물질로서 유기-전이 금속 하이드라이드의 개선된제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
JPS59121917A (ja) * 1982-12-28 1984-07-14 Nec Corp 気相成長装置
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
JPS6114102A (ja) * 1984-06-29 1986-01-22 Matsushita Electric Ind Co Ltd 水素化物の製造法
US4636268A (en) * 1984-11-30 1987-01-13 At&T Bell Laboratories Chemical beam deposition method utilizing alkyl compounds in a carrier gas

Also Published As

Publication number Publication date
JPH0618176B2 (ja) 1994-03-09
JPS62219917A (ja) 1987-09-28
EP0245600A2 (de) 1987-11-19
EP0245600B1 (de) 1993-06-09
EP0245600A3 (en) 1990-03-14

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Legal Events

Date Code Title Description
8332 No legal effect for de