DE3773969D1 - Ladungstransfer-einrichtung. - Google Patents
Ladungstransfer-einrichtung.Info
- Publication number
- DE3773969D1 DE3773969D1 DE8787104705T DE3773969T DE3773969D1 DE 3773969 D1 DE3773969 D1 DE 3773969D1 DE 8787104705 T DE8787104705 T DE 8787104705T DE 3773969 T DE3773969 T DE 3773969T DE 3773969 D1 DE3773969 D1 DE 3773969D1
- Authority
- DE
- Germany
- Prior art keywords
- transfer device
- cargo transfer
- cargo
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61073457A JPS62230052A (ja) | 1986-03-31 | 1986-03-31 | 電荷転送装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3773969D1 true DE3773969D1 (de) | 1991-11-28 |
Family
ID=13518792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787104705T Expired - Lifetime DE3773969D1 (de) | 1986-03-31 | 1987-03-31 | Ladungstransfer-einrichtung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4809307A (de) |
EP (1) | EP0239978B1 (de) |
JP (1) | JPS62230052A (de) |
KR (1) | KR910003273B1 (de) |
DE (1) | DE3773969D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4984256A (en) * | 1987-02-13 | 1991-01-08 | Kabushiki Kaisha Toshiba | Charge transfer device with booster circuit |
US5142346A (en) * | 1987-04-03 | 1992-08-25 | Texas Instruments Incorporated | Floating gate JFET image sensor |
JP2672507B2 (ja) * | 1987-05-21 | 1997-11-05 | 株式会社東芝 | 電荷転送素子 |
DE3852320T2 (de) * | 1987-05-21 | 1995-04-06 | Toshiba Kawasaki Kk | Ladungsübertragungsanordnung. |
NL8701528A (nl) * | 1987-06-30 | 1989-01-16 | Philips Nv | Halfgeleiderinrichting voozien van een ladingsoverdrachtinrichting. |
GB9008915D0 (en) * | 1990-04-20 | 1990-06-20 | Bedford Timothy J | Controlling exhaust emissions in lpg engines |
JP3057810B2 (ja) * | 1991-06-07 | 2000-07-04 | 日本電気株式会社 | 電荷検出装置 |
US5600696A (en) * | 1995-10-11 | 1997-02-04 | David Sarnoff Research Center, Inc. | Dual-gain floating diffusion output amplifier |
JP2003234961A (ja) * | 2002-02-06 | 2003-08-22 | Sharp Corp | 固体撮像素子 |
US20070035649A1 (en) * | 2005-08-10 | 2007-02-15 | Micron Technology, Inc. | Image pixel reset through dual conversion gain gate |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2430694A1 (fr) * | 1978-07-04 | 1980-02-01 | Thomson Csf | Dispositif de lecture d'une quantite de charges electriques, et filtre a transfert de charges muni d'un tel dispositif |
US4631739A (en) * | 1984-11-28 | 1986-12-23 | Xerox Corporation | High dynamic range charge amplifier |
-
1986
- 1986-03-31 JP JP61073457A patent/JPS62230052A/ja active Granted
-
1987
- 1987-03-30 US US07/031,459 patent/US4809307A/en not_active Expired - Lifetime
- 1987-03-31 DE DE8787104705T patent/DE3773969D1/de not_active Expired - Lifetime
- 1987-03-31 EP EP87104705A patent/EP0239978B1/de not_active Expired - Lifetime
- 1987-03-31 KR KR1019870003027A patent/KR910003273B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH043104B2 (de) | 1992-01-22 |
KR910003273B1 (ko) | 1991-05-25 |
EP0239978A2 (de) | 1987-10-07 |
JPS62230052A (ja) | 1987-10-08 |
EP0239978A3 (en) | 1989-10-25 |
US4809307A (en) | 1989-02-28 |
KR870009589A (ko) | 1987-10-27 |
EP0239978B1 (de) | 1991-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |