DE3765520D1 - Kapillare aus siliziumkarbid. - Google Patents

Kapillare aus siliziumkarbid.

Info

Publication number
DE3765520D1
DE3765520D1 DE8787116794T DE3765520T DE3765520D1 DE 3765520 D1 DE3765520 D1 DE 3765520D1 DE 8787116794 T DE8787116794 T DE 8787116794T DE 3765520 T DE3765520 T DE 3765520T DE 3765520 D1 DE3765520 D1 DE 3765520D1
Authority
DE
Germany
Prior art keywords
capillar
silicon carbide
carbide
silicon
carbide capillar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787116794T
Other languages
English (en)
Inventor
Robert Bertin
Michael B Miller
Burl M Moon
Robert C Post
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Application granted granted Critical
Publication of DE3765520D1 publication Critical patent/DE3765520D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • B23K20/007Ball bonding
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/13Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Wire Bonding (AREA)
DE8787116794T 1986-11-20 1987-11-13 Kapillare aus siliziumkarbid. Expired - Lifetime DE3765520D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/933,007 US4772498A (en) 1986-11-20 1986-11-20 Silicon carbide capillaries

Publications (1)

Publication Number Publication Date
DE3765520D1 true DE3765520D1 (de) 1990-11-15

Family

ID=25463276

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787116794T Expired - Lifetime DE3765520D1 (de) 1986-11-20 1987-11-13 Kapillare aus siliziumkarbid.

Country Status (5)

Country Link
US (1) US4772498A (de)
EP (1) EP0268230B1 (de)
JP (1) JPS63137445A (de)
KR (1) KR880006770A (de)
DE (1) DE3765520D1 (de)

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* Cited by examiner, † Cited by third party
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US4978567A (en) * 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
GB9104984D0 (en) * 1991-03-08 1991-04-24 De Beers Ind Diamond Lead bonding tool
GB2285943B (en) * 1994-01-28 1996-09-11 Hewlett Packard Co Bonding tool for electronic device
US5605274A (en) * 1995-11-13 1997-02-25 General Motors Corporation Controlled atmosphere braze furnace with free part entry
US6180891B1 (en) 1997-02-26 2001-01-30 International Business Machines Corporation Control of size and heat affected zone for fine pitch wire bonding
US6651864B2 (en) * 1999-02-25 2003-11-25 Steven Frederick Reiber Dissipative ceramic bonding tool tip
US7124927B2 (en) * 1999-02-25 2006-10-24 Reiber Steven F Flip chip bonding tool and ball placement capillary
US7032802B2 (en) * 1999-02-25 2006-04-25 Reiber Steven F Bonding tool with resistance
US7389905B2 (en) 1999-02-25 2008-06-24 Reiber Steven F Flip chip bonding tool tip
US20060071050A1 (en) * 1999-02-25 2006-04-06 Reiber Steven F Multi-head tab bonding tool
US20080197172A1 (en) * 1999-02-25 2008-08-21 Reiber Steven F Bonding Tool
US20070131661A1 (en) * 1999-02-25 2007-06-14 Reiber Steven F Solder ball placement system
US20060261132A1 (en) * 1999-02-25 2006-11-23 Reiber Steven F Low range bonding tool
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EP0268230A3 (en) 1988-08-31
EP0268230A2 (de) 1988-05-25
EP0268230B1 (de) 1990-10-10
US4772498A (en) 1988-09-20
JPS63137445A (ja) 1988-06-09
KR880006770A (ko) 1988-07-25

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