DE3742920C2 - - Google Patents
Info
- Publication number
- DE3742920C2 DE3742920C2 DE3742920A DE3742920A DE3742920C2 DE 3742920 C2 DE3742920 C2 DE 3742920C2 DE 3742920 A DE3742920 A DE 3742920A DE 3742920 A DE3742920 A DE 3742920A DE 3742920 C2 DE3742920 C2 DE 3742920C2
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- arrangement
- elements
- light sensor
- electrode arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 230000005855 radiation Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61299863A JPS63153857A (ja) | 1986-12-18 | 1986-12-18 | ライン状光検出器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3742920A1 DE3742920A1 (de) | 1988-06-30 |
| DE3742920C2 true DE3742920C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-04-11 |
Family
ID=17877860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19873742920 Granted DE3742920A1 (de) | 1986-12-18 | 1987-12-17 | Lineare lichtfuehleranordnung |
Country Status (3)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0964269A3 (en) * | 1998-06-10 | 2006-09-06 | Fuji Photo Film Co., Ltd. | Radiation image read-out method and apparatus |
| DE19962775C1 (de) * | 1999-12-23 | 2001-03-15 | Agfa Gevaert Ag | Vorrichtung zum Auslesen von in einer Speicherschicht abgespeicherten Informationen und Röntgenkassette |
| JP2001350228A (ja) * | 2000-06-07 | 2001-12-21 | Fuji Photo Film Co Ltd | 放射線画像読取装置 |
| US6800870B2 (en) * | 2000-12-20 | 2004-10-05 | Michel Sayag | Light stimulating and collecting methods and apparatus for storage-phosphor image plates |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61189065A (ja) * | 1985-02-15 | 1986-08-22 | Fuji Electric Co Ltd | イメ−ジセンサ |
-
1986
- 1986-12-18 JP JP61299863A patent/JPS63153857A/ja active Pending
-
1987
- 1987-12-17 US US07/134,061 patent/US4887139A/en not_active Expired - Fee Related
- 1987-12-17 DE DE19873742920 patent/DE3742920A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3742920A1 (de) | 1988-06-30 |
| JPS63153857A (ja) | 1988-06-27 |
| US4887139A (en) | 1989-12-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |