DE3740319C2 - - Google Patents

Info

Publication number
DE3740319C2
DE3740319C2 DE3740319A DE3740319A DE3740319C2 DE 3740319 C2 DE3740319 C2 DE 3740319C2 DE 3740319 A DE3740319 A DE 3740319A DE 3740319 A DE3740319 A DE 3740319A DE 3740319 C2 DE3740319 C2 DE 3740319C2
Authority
DE
Germany
Prior art keywords
layer
recording material
material according
thin
thin layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3740319A
Other languages
German (de)
English (en)
Other versions
DE3740319A1 (de
Inventor
Shuji Tokio/Tokyo Jp Yoshizawa
Tatsuya Machida Tokio/Tokyo Jp Ikezue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Intelligent Technology Co Ltd
Original Assignee
Toshiba Corp
Toshiba Automation Equipment Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP28459686A external-priority patent/JPS63137241A/ja
Priority claimed from JP28459586A external-priority patent/JPS63137240A/ja
Priority claimed from JP28459786A external-priority patent/JPS63137242A/ja
Priority claimed from JP31557286A external-priority patent/JPS63165866A/ja
Priority claimed from JP31557086A external-priority patent/JPS63165865A/ja
Priority claimed from JP31556286A external-priority patent/JPS63163861A/ja
Application filed by Toshiba Corp, Toshiba Automation Equipment Engineering Ltd filed Critical Toshiba Corp
Publication of DE3740319A1 publication Critical patent/DE3740319A1/de
Application granted granted Critical
Publication of DE3740319C2 publication Critical patent/DE3740319C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08264—Silicon-based comprising seven or more silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08292—Germanium-based

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE19873740319 1986-11-29 1987-11-27 Elektrophotographisches aufzeichnungsmaterial Granted DE3740319A1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP28459686A JPS63137241A (ja) 1986-11-29 1986-11-29 電子写真感光体
JP28459586A JPS63137240A (ja) 1986-11-29 1986-11-29 電子写真感光体
JP28459786A JPS63137242A (ja) 1986-11-29 1986-11-29 電子写真感光体
JP31557286A JPS63165866A (ja) 1986-12-26 1986-12-26 電子写真感光体
JP31557086A JPS63165865A (ja) 1986-12-26 1986-12-26 電子写真感光体
JP31556286A JPS63163861A (ja) 1986-12-26 1986-12-26 電子写真感光体

Publications (2)

Publication Number Publication Date
DE3740319A1 DE3740319A1 (de) 1988-06-09
DE3740319C2 true DE3740319C2 (https=) 1989-07-06

Family

ID=27554432

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873740319 Granted DE3740319A1 (de) 1986-11-29 1987-11-27 Elektrophotographisches aufzeichnungsmaterial

Country Status (2)

Country Link
US (1) US5143807A (https=)
DE (1) DE3740319A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4557987A (en) * 1980-12-23 1985-12-10 Canon Kabushiki Kaisha Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers
US4641168A (en) * 1983-01-26 1987-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Light sensitive semiconductor device for holding electrical charge therein
JPH067270B2 (ja) * 1983-12-16 1994-01-26 株式会社日立製作所 電子写真用感光体
US4677044A (en) * 1984-05-09 1987-06-30 Konishiroku Photo Industry Co., Ltd. Multi-layered electrophotographic photosensitive member having amorphous silicon
JPS6126055A (ja) * 1984-07-16 1986-02-05 Minolta Camera Co Ltd 電子写真感光体
US4701395A (en) * 1985-05-20 1987-10-20 Exxon Research And Engineering Company Amorphous photoreceptor with high sensitivity to long wavelengths
US4729937A (en) * 1985-12-26 1988-03-08 Kabushiki Kaisha Toshiba Layered amorphous silicon electrophotographic photosensitive member comprises BN surface layer and BN barrier layer
JPH0785173B2 (ja) * 1985-12-27 1995-09-13 キヤノン株式会社 光受容部材
JPH0772803B2 (ja) * 1986-01-10 1995-08-02 株式会社東芝 電子写真感光体
US4718947A (en) * 1986-04-17 1988-01-12 Solarex Corporation Superlattice doped layers for amorphous silicon photovoltaic cells
US4720444A (en) * 1986-07-31 1988-01-19 Xerox Corporation Layered amorphous silicon alloy photoconductive electrostatographic imaging members with p, n multijunctions

Also Published As

Publication number Publication date
US5143807A (en) 1992-09-01
DE3740319A1 (de) 1988-06-09

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee