DE3685363D1 - Verfahren zur herstellung isolierter graeben in einem halbleiterkoerper. - Google Patents

Verfahren zur herstellung isolierter graeben in einem halbleiterkoerper.

Info

Publication number
DE3685363D1
DE3685363D1 DE8686103743T DE3685363T DE3685363D1 DE 3685363 D1 DE3685363 D1 DE 3685363D1 DE 8686103743 T DE8686103743 T DE 8686103743T DE 3685363 T DE3685363 T DE 3685363T DE 3685363 D1 DE3685363 D1 DE 3685363D1
Authority
DE
Germany
Prior art keywords
semiconductor body
producing insulated
insulated trenches
trenches
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686103743T
Other languages
German (de)
English (en)
Inventor
Harold Henry Herd
Lawrence Jacobowitz
Jane Margret Shaw
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3685363D1 publication Critical patent/DE3685363D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6539—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process
DE8686103743T 1985-04-29 1986-03-19 Verfahren zur herstellung isolierter graeben in einem halbleiterkoerper. Expired - Lifetime DE3685363D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/728,633 US4665010A (en) 1985-04-29 1985-04-29 Method of fabricating photopolymer isolation trenches in the surface of a semiconductor wafer

Publications (1)

Publication Number Publication Date
DE3685363D1 true DE3685363D1 (de) 1992-06-25

Family

ID=24927637

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686103743T Expired - Lifetime DE3685363D1 (de) 1985-04-29 1986-03-19 Verfahren zur herstellung isolierter graeben in einem halbleiterkoerper.

Country Status (4)

Country Link
US (1) US4665010A (https=)
EP (1) EP0199965B1 (https=)
JP (1) JPS61251154A (https=)
DE (1) DE3685363D1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4983545A (en) * 1987-03-20 1991-01-08 Nec Corporation Planarization of dielectric films on integrated circuits
US4789646A (en) * 1987-07-20 1988-12-06 North American Philips Corporation, Signetics Division Company Method for selective surface treatment of semiconductor structures
US5135891A (en) * 1988-01-19 1992-08-04 Mitsubishi Denki Kabushiki Kaisha Method for forming film of uniform thickness on semiconductor substrate having concave portion
US4876217A (en) * 1988-03-24 1989-10-24 Motorola Inc. Method of forming semiconductor structure isolation regions
US5068959A (en) * 1988-07-11 1991-12-03 Digital Equipment Corporation Method of manufacturing a thin film head
DE4300765C1 (de) * 1993-01-14 1993-12-23 Bosch Gmbh Robert Verfahren zum Planarisieren grabenförmiger Strukturen
JP2687948B2 (ja) * 1995-10-05 1997-12-08 日本電気株式会社 半導体装置の製造方法
US5776660A (en) * 1996-09-16 1998-07-07 International Business Machines Corporation Fabrication method for high-capacitance storage node structures
KR100228773B1 (ko) * 1996-12-31 1999-11-01 김영환 반도체소자 및 그 제조방법
FR2766012B1 (fr) * 1997-07-08 2001-01-19 France Telecom Procede de minimisation de l'effet de coin par densification de la couche isolante
US8136875B2 (en) * 2009-07-15 2012-03-20 Honda Motor Co., Ltd. Cup holder and pivoting armrest

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4041190A (en) * 1971-06-29 1977-08-09 Thomson-Csf Method for producing a silica mask on a semiconductor substrate
GB1451623A (en) * 1973-10-01 1976-10-06 Mullard Ltd Method of prov8ding a patterned layer of silicon-containing oxide on a substrate
US4016017A (en) * 1975-11-28 1977-04-05 International Business Machines Corporation Integrated circuit isolation structure and method for producing the isolation structure
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
JPS6043024B2 (ja) * 1978-12-30 1985-09-26 富士通株式会社 半導体装置の製造方法
JPS56160050A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Semiconductor device and manufacture thereof
US4307180A (en) * 1980-08-22 1981-12-22 International Business Machines Corp. Process of forming recessed dielectric regions in a monocrystalline silicon substrate
JPS5784138A (en) * 1980-11-13 1982-05-26 Toshiba Corp Manufacture of mesa semiconductor device
US4385975A (en) * 1981-12-30 1983-05-31 International Business Machines Corp. Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate
US4427713A (en) * 1983-01-17 1984-01-24 Rca Corporation Planarization technique
US4568601A (en) * 1984-10-19 1986-02-04 International Business Machines Corporation Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures
US4576834A (en) * 1985-05-20 1986-03-18 Ncr Corporation Method for forming trench isolation structures

Also Published As

Publication number Publication date
EP0199965A2 (en) 1986-11-05
JPS61251154A (ja) 1986-11-08
EP0199965B1 (en) 1992-05-20
JPH0434296B2 (https=) 1992-06-05
EP0199965A3 (en) 1989-11-02
US4665010A (en) 1987-05-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee