DE3682793D1 - Piezoresistiver belastungsfuehler. - Google Patents

Piezoresistiver belastungsfuehler.

Info

Publication number
DE3682793D1
DE3682793D1 DE8686101679T DE3682793T DE3682793D1 DE 3682793 D1 DE3682793 D1 DE 3682793D1 DE 8686101679 T DE8686101679 T DE 8686101679T DE 3682793 T DE3682793 T DE 3682793T DE 3682793 D1 DE3682793 D1 DE 3682793D1
Authority
DE
Germany
Prior art keywords
load sensor
piezoresistive
piezoresistive load
sensor
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686101679T
Other languages
English (en)
Inventor
Hideo Miura
Tatsuji Sakamoto
Asao Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5447385A external-priority patent/JPH0697697B2/ja
Priority claimed from JP5447485A external-priority patent/JPS61214583A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3682793D1 publication Critical patent/DE3682793D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/16—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
    • G01L5/161—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance
    • G01L5/162—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance of piezoresistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
DE8686101679T 1985-03-20 1986-02-10 Piezoresistiver belastungsfuehler. Expired - Lifetime DE3682793D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5447385A JPH0697697B2 (ja) 1985-03-20 1985-03-20 半導体圧力変換装置
JP5447485A JPS61214583A (ja) 1985-03-20 1985-03-20 半導体圧力変換装置

Publications (1)

Publication Number Publication Date
DE3682793D1 true DE3682793D1 (de) 1992-01-23

Family

ID=26395238

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686101679T Expired - Lifetime DE3682793D1 (de) 1985-03-20 1986-02-10 Piezoresistiver belastungsfuehler.

Country Status (3)

Country Link
US (1) US4739381A (de)
EP (1) EP0195232B1 (de)
DE (1) DE3682793D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4967605A (en) * 1987-04-24 1990-11-06 Wacoh Corporation Detector for force and acceleration using resistance element
US4873871A (en) * 1988-06-17 1989-10-17 Motorola, Inc. Mechanical field effect transistor sensor
US5119166A (en) * 1990-02-06 1992-06-02 Honeywell Inc. Hall effect element aligned to reduce package-induced offsets
US5076106A (en) * 1990-03-21 1991-12-31 Amp Incorporated Normal force transducer
US5172205A (en) * 1990-09-26 1992-12-15 Nissan Motor Co., Ltd. Piezoresistive semiconductor device suitable for use in a pressure sensor
JP2553199Y2 (ja) * 1991-12-26 1997-11-05 株式会社豊田中央研究所 力変換素子
JP3114453B2 (ja) * 1993-10-05 2000-12-04 株式会社日立製作所 物理量検出センサ及びプロセス状態検出器
US6150917A (en) * 1995-02-27 2000-11-21 Motorola, Inc. Piezoresistive sensor bridge having overlapping diffused regions to accommodate mask misalignment and method
JP4161410B2 (ja) * 1997-07-25 2008-10-08 株式会社デンソー 圧力検出装置
US6550337B1 (en) * 2000-01-19 2003-04-22 Measurement Specialties, Inc. Isolation technique for pressure sensing structure
US7082835B2 (en) * 2003-06-18 2006-08-01 Honeywell International Inc. Pressure sensor apparatus and method
DE10331096B4 (de) * 2003-07-09 2014-02-13 Austriamicrosystems Ag Integrierte Halbleiteranordnung und Verfahren
DE102004003853B4 (de) * 2004-01-26 2009-12-17 Infineon Technologies Ag Vorrichtung und Verfahren zur Kompensation von Piezo-Einflüssen auf eine integrierte Schaltungsanordnung
US7597005B2 (en) * 2005-11-10 2009-10-06 Honeywell International Inc. Pressure sensor housing and configuration
US7921731B2 (en) * 2007-12-03 2011-04-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Two-axis direct fluid shear stress sensor
CA2806543C (en) * 2010-11-24 2016-05-17 The Governors Of The University Of Alberta A novel embedded 3d stress and temperature sensor utilizing silicon doping manipulation
JP5649478B2 (ja) * 2011-02-16 2015-01-07 三菱電機株式会社 半導体装置及びその試験方法
EP3323778B1 (de) 2016-11-22 2020-01-08 NXP USA, Inc. Mems-vorrichtung und verfahren zur kalibrierung einer mems-vorrichtung
US10352792B2 (en) * 2017-02-15 2019-07-16 Texas Instruments Incorporated Device and method for on-chip mechanical stress sensing
CN113227954A (zh) * 2018-12-20 2021-08-06 深圳纽迪瑞科技开发有限公司 压力感应装置、压力感应方法及电子终端
CN110333221B (zh) * 2019-07-15 2020-08-21 天津大学 {110}晶面平面应力分量测量方法及系统
US20230138119A1 (en) * 2020-03-19 2023-05-04 Shenzhen New Degree Technology Co., Ltd. Method for fabricating strain sensing film, strain sensing film, and pressure sensor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3123788A (en) * 1964-03-03 Piezoresistive gage
US3132788A (en) * 1961-10-25 1964-05-12 Axel H Johnson Tape transporting means for a magnetic recorder
US3277698A (en) * 1963-11-15 1966-10-11 Bell Telephone Labor Inc Stress sensing semiconductive devices
CH423939A (fr) * 1965-06-04 1967-05-13 Centre Electron Horloger Résistance diffusée dans un circuit intégré
FR1522471A (fr) * 1967-03-15 1968-04-26 Csf Dispositif de mesure de contrainte
US3537319A (en) * 1968-07-26 1970-11-03 Gen Electric Silicon diaphragm with optimized integral strain gages
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source
US3818289A (en) * 1972-04-10 1974-06-18 Raytheon Co Semiconductor integrated circuit structures
US3922705A (en) * 1973-06-04 1975-11-25 Gen Electric Dielectrically isolated integral silicon diaphram or other semiconductor product
US3899695A (en) * 1973-09-24 1975-08-12 Nat Semiconductor Corp Semiconductor pressure transducer employing novel temperature compensation means
JPS5660066A (en) * 1979-10-19 1981-05-23 Nec Corp Semiconductor strain detector
JPS56140229A (en) * 1980-04-02 1981-11-02 Toshiba Corp Pressure converter
US4317126A (en) * 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
JPH0239104B2 (ja) * 1980-12-05 1990-09-04 Tokyo Shibaura Electric Co Handotaikanatsusoshi
US4510671A (en) * 1981-08-31 1985-04-16 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
JPS60128673A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体感圧装置

Also Published As

Publication number Publication date
EP0195232A2 (de) 1986-09-24
EP0195232B1 (de) 1991-12-11
US4739381A (en) 1988-04-19
EP0195232A3 (en) 1989-10-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee