DE3672922D1 - Festkoerperbildsensor. - Google Patents

Festkoerperbildsensor.

Info

Publication number
DE3672922D1
DE3672922D1 DE8686304878T DE3672922T DE3672922D1 DE 3672922 D1 DE3672922 D1 DE 3672922D1 DE 8686304878 T DE8686304878 T DE 8686304878T DE 3672922 T DE3672922 T DE 3672922T DE 3672922 D1 DE3672922 D1 DE 3672922D1
Authority
DE
Germany
Prior art keywords
image sensor
solid image
solid
sensor
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686304878T
Other languages
English (en)
Inventor
Masafumi Mitsubishi Den Kimata
Naoki Mitsubishi Denki Yutani
Masahiko Mitsubishi Denk Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3672922D1 publication Critical patent/DE3672922D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE8686304878T 1985-08-13 1986-06-24 Festkoerperbildsensor. Expired - Fee Related DE3672922D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60179653A JPH0712079B2 (ja) 1985-08-13 1985-08-13 固体撮像素子

Publications (1)

Publication Number Publication Date
DE3672922D1 true DE3672922D1 (de) 1990-08-30

Family

ID=16069534

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686304878T Expired - Fee Related DE3672922D1 (de) 1985-08-13 1986-06-24 Festkoerperbildsensor.

Country Status (5)

Country Link
US (1) US5060038A (de)
EP (1) EP0212803B1 (de)
JP (1) JPH0712079B2 (de)
KR (1) KR900001227B1 (de)
DE (1) DE3672922D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2653550B2 (ja) * 1990-11-14 1997-09-17 三菱電機株式会社 固体撮像素子
JP3173851B2 (ja) * 1992-04-13 2001-06-04 三菱電機株式会社 Ｃｓｄ方式の固体撮像装置
KR0136934B1 (ko) * 1994-02-23 1998-04-24 문정환 선형 고체영상소자
JP2894235B2 (ja) * 1995-03-31 1999-05-24 日本電気株式会社 固体撮像装置
KR100541712B1 (ko) * 1996-01-18 2006-06-13 매그나칩 반도체 유한회사 선형ccd촬상소자
JP4246890B2 (ja) 2000-06-26 2009-04-02 株式会社東芝 固体撮像装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995302A (en) * 1973-05-07 1976-11-30 Fairchild Camera And Instrument Corporation Transfer gate-less photosensor configuration
JPS5937629B2 (ja) * 1975-01-30 1984-09-11 ソニー株式会社 固体撮像体
US4117514A (en) * 1977-02-14 1978-09-26 Matsushita Electric Industrial Co., Ltd. Solid state imaging device
JPS53125791A (en) * 1977-04-08 1978-11-02 Toshiba Corp Solidstate pick up unit
JPS5552278A (en) * 1978-10-13 1980-04-16 Fujitsu Ltd Solid image pickup device
JPS5685981A (en) * 1979-12-15 1981-07-13 Sharp Corp Solid image pickup apparatus
JPS56131972A (en) * 1980-03-19 1981-10-15 Fujitsu Ltd Photoelectric conversion device
JPS58210663A (ja) * 1982-06-01 1983-12-07 Mitsubishi Electric Corp 固体撮像装置
JPS5931056A (ja) * 1982-08-13 1984-02-18 Mitsubishi Electric Corp 固体撮像素子
US4548671A (en) * 1984-07-23 1985-10-22 Rca Corporation Method of making a charge-coupled device imager which includes an array of Schottky-barrier detectors

Also Published As

Publication number Publication date
EP0212803A1 (de) 1987-03-04
EP0212803B1 (de) 1990-07-25
JPS6239058A (ja) 1987-02-20
KR900001227B1 (ko) 1990-03-05
JPH0712079B2 (ja) 1995-02-08
KR870002720A (ko) 1987-04-06
US5060038A (en) 1991-10-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee