DE3669807D1 - Silizium-halbleiterbauelement. - Google Patents

Silizium-halbleiterbauelement.

Info

Publication number
DE3669807D1
DE3669807D1 DE8686310129T DE3669807T DE3669807D1 DE 3669807 D1 DE3669807 D1 DE 3669807D1 DE 8686310129 T DE8686310129 T DE 8686310129T DE 3669807 T DE3669807 T DE 3669807T DE 3669807 D1 DE3669807 D1 DE 3669807D1
Authority
DE
Germany
Prior art keywords
semiconductor component
silicon semiconductor
silicon
component
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686310129T
Other languages
English (en)
Inventor
Tadashi Saitoh
Takao Miyazaki
Shigeru Kokunai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3669807D1 publication Critical patent/DE3669807D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE8686310129T 1986-01-08 1986-12-24 Silizium-halbleiterbauelement. Expired - Lifetime DE3669807D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54886A JPS62159460A (ja) 1986-01-08 1986-01-08 シリコン半導体装置

Publications (1)

Publication Number Publication Date
DE3669807D1 true DE3669807D1 (de) 1990-04-26

Family

ID=11476777

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686310129T Expired - Lifetime DE3669807D1 (de) 1986-01-08 1986-12-24 Silizium-halbleiterbauelement.

Country Status (3)

Country Link
EP (1) EP0231656B1 (de)
JP (1) JPS62159460A (de)
DE (1) DE3669807D1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2860138B2 (ja) * 1989-03-29 1999-02-24 キヤノン株式会社 半導体装置およびこれを用いた光電変換装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4254429A (en) * 1978-07-08 1981-03-03 Shunpei Yamazaki Hetero junction semiconductor device

Also Published As

Publication number Publication date
EP0231656A3 (en) 1987-12-23
EP0231656A2 (de) 1987-08-12
JPS62159460A (ja) 1987-07-15
EP0231656B1 (de) 1990-03-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee