DE3664244D1 - Semiconductor device with interconnection and insulating layers - Google Patents

Semiconductor device with interconnection and insulating layers

Info

Publication number
DE3664244D1
DE3664244D1 DE8686300377T DE3664244T DE3664244D1 DE 3664244 D1 DE3664244 D1 DE 3664244D1 DE 8686300377 T DE8686300377 T DE 8686300377T DE 3664244 T DE3664244 T DE 3664244T DE 3664244 D1 DE3664244 D1 DE 3664244D1
Authority
DE
Germany
Prior art keywords
interconnection
semiconductor device
insulating layers
insulating
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8686300377T
Other languages
German (de)
English (en)
Inventor
Kouzi Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3664244D1 publication Critical patent/DE3664244D1/de
Expired legal-status Critical Current

Links

Classifications

    • H10W20/435—
DE8686300377T 1985-02-20 1986-01-20 Semiconductor device with interconnection and insulating layers Expired DE3664244D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60033735A JPS61193454A (ja) 1985-02-20 1985-02-20 半導体装置

Publications (1)

Publication Number Publication Date
DE3664244D1 true DE3664244D1 (en) 1989-08-10

Family

ID=12394660

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686300377T Expired DE3664244D1 (en) 1985-02-20 1986-01-20 Semiconductor device with interconnection and insulating layers

Country Status (4)

Country Link
US (2) US5028982A (cg-RX-API-DMAC10.html)
EP (1) EP0206444B1 (cg-RX-API-DMAC10.html)
JP (1) JPS61193454A (cg-RX-API-DMAC10.html)
DE (1) DE3664244D1 (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0658947B2 (ja) * 1984-02-24 1994-08-03 株式会社日立製作所 半導体メモリ装置の製法
JPH01196141A (ja) * 1988-01-29 1989-08-07 Nec Corp 配線層を有する半導体装置
DE3902693C2 (de) * 1988-01-30 1995-11-30 Toshiba Kawasaki Kk Mehrebenenverdrahtung für eine integrierte Halbleiterschaltungsanordnung und Verfahren zur Herstellung von Mehrebenenverdrahtungen für integrierte Halbleiterschaltungsanordnungen
US4916514A (en) * 1988-05-31 1990-04-10 Unisys Corporation Integrated circuit employing dummy conductors for planarity
EP0457449A1 (en) * 1990-04-27 1991-11-21 Fujitsu Limited Semiconductor device having via hole and method of producing the same
KR920017227A (ko) * 1991-02-05 1992-09-26 김광호 반도체장치의 층간콘택 구조 및 그 제조방법
US6096636A (en) * 1996-02-06 2000-08-01 Micron Technology, Inc. Methods of forming conductive lines
US5766803A (en) * 1996-06-05 1998-06-16 Advanced Micro Devices, Inc. Mask generation technique for producing an integrated circuit with optimal metal interconnect layout for achieving global planarization
JP2000340529A (ja) * 1999-05-31 2000-12-08 Mitsubishi Electric Corp 半導体装置
KR100849752B1 (ko) * 2001-04-05 2008-07-31 스카라 가부시키가이샤 카메라 및 카메라용 유닛
DE10200741A1 (de) 2002-01-11 2003-07-24 Infineon Technologies Ag Verfahren zur Herstellung einer topologieoptimierten Elektrode für einen Resonator in Dünnfilmtechnologie
US7759734B2 (en) * 2008-03-07 2010-07-20 United Microelectronics Corp. Semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868723A (en) * 1973-06-29 1975-02-25 Ibm Integrated circuit structure accommodating via holes
JPS5772349A (en) * 1980-10-23 1982-05-06 Nec Corp Semiconductor integrated circuit device
JPS5936929A (ja) * 1982-08-25 1984-02-29 Mitsubishi Electric Corp 半導体装置の製造方法
JPS59163850A (ja) * 1983-03-07 1984-09-14 Mitsubishi Electric Corp 半導体装置
JPS59200440A (ja) * 1983-04-28 1984-11-13 Agency Of Ind Science & Technol 配線構造の製造方法
JPS59228736A (ja) * 1983-06-10 1984-12-22 Seiko Instr & Electronics Ltd 多層配線構造

Also Published As

Publication number Publication date
US5028981A (en) 1991-07-02
JPH0580140B2 (cg-RX-API-DMAC10.html) 1993-11-08
EP0206444A1 (en) 1986-12-30
EP0206444B1 (en) 1989-07-05
US5028982A (en) 1991-07-02
JPS61193454A (ja) 1986-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee