DE3633998A1 - Strahlendetektor - Google Patents

Strahlendetektor

Info

Publication number
DE3633998A1
DE3633998A1 DE19863633998 DE3633998A DE3633998A1 DE 3633998 A1 DE3633998 A1 DE 3633998A1 DE 19863633998 DE19863633998 DE 19863633998 DE 3633998 A DE3633998 A DE 3633998A DE 3633998 A1 DE3633998 A1 DE 3633998A1
Authority
DE
Germany
Prior art keywords
detector
radiation
radiation detector
elements
beam direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19863633998
Other languages
German (de)
English (en)
Inventor
Reiner F Dipl Phys Schulz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19863633998 priority Critical patent/DE3633998A1/de
Priority to US07/103,383 priority patent/US4901126A/en
Priority to JP1987152130U priority patent/JPH062282Y2/ja
Publication of DE3633998A1 publication Critical patent/DE3633998A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
DE19863633998 1986-10-06 1986-10-06 Strahlendetektor Withdrawn DE3633998A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19863633998 DE3633998A1 (de) 1986-10-06 1986-10-06 Strahlendetektor
US07/103,383 US4901126A (en) 1986-10-06 1987-10-01 Radiation detector
JP1987152130U JPH062282Y2 (ja) 1986-10-06 1987-10-02 放射線検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19863633998 DE3633998A1 (de) 1986-10-06 1986-10-06 Strahlendetektor

Publications (1)

Publication Number Publication Date
DE3633998A1 true DE3633998A1 (de) 1988-04-14

Family

ID=6311156

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863633998 Withdrawn DE3633998A1 (de) 1986-10-06 1986-10-06 Strahlendetektor

Country Status (3)

Country Link
US (1) US4901126A (https=)
JP (1) JPH062282Y2 (https=)
DE (1) DE3633998A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434417A (en) * 1993-11-05 1995-07-18 The Regents Of The University Of California High resolution energy-sensitive digital X-ray
WO1999040454A3 (de) * 1998-02-05 1999-09-23 Forschungszentrum Juelich Gmbh Ortsauflösender gamma-detektor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5771271A (en) * 1997-04-16 1998-06-23 Infimed, Inc. Phototimer for radiology imaging

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2490875A1 (fr) * 1980-09-23 1982-03-26 Thomson Csf Photodiode comportant plusieurs elements photosensibles tres rapproches qui presentent entre eux un excellent decouplage

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3550094A (en) * 1968-04-01 1970-12-22 Gen Electric Semiconductor data storage apparatus with electron beam readout
DE1812127A1 (de) * 1968-12-02 1970-06-11 Telefunken Patent Halbleiteranordnung zum Messen ionisierender Strahlung
US3691389A (en) * 1969-06-09 1972-09-12 Ronald Ellis Radiation detector comprising semi-conductor body incorporating a two-dimensional array of p-i-n-devices
DE2239953A1 (de) * 1972-08-14 1974-02-28 Siemens Ag Detektoranordnung
DE2543065A1 (de) * 1975-09-26 1977-03-31 Siemens Ag Verfahren zum herstellen einer ortsaufloesenden detektoranordnung
JPS5956773A (ja) * 1982-09-25 1984-04-02 Fuji Electric Corp Res & Dev Ltd 半導体放射線検出素子
US4688067A (en) * 1984-02-24 1987-08-18 The United States Of America As Represented By The Department Of Energy Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
JPH0678376A (ja) * 1992-05-20 1994-03-18 Nec Corp パターン付きテレコン制御方式

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2490875A1 (fr) * 1980-09-23 1982-03-26 Thomson Csf Photodiode comportant plusieurs elements photosensibles tres rapproches qui presentent entre eux un excellent decouplage

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Rev.Sci.Instr." 46 (1975) 53-57 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434417A (en) * 1993-11-05 1995-07-18 The Regents Of The University Of California High resolution energy-sensitive digital X-ray
WO1999040454A3 (de) * 1998-02-05 1999-09-23 Forschungszentrum Juelich Gmbh Ortsauflösender gamma-detektor

Also Published As

Publication number Publication date
JPS6362732U (https=) 1988-04-25
JPH062282Y2 (ja) 1994-01-19
US4901126A (en) 1990-02-13

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Legal Events

Date Code Title Description
8120 Willingness to grant licences paragraph 23
8110 Request for examination paragraph 44
8139 Disposal/non-payment of the annual fee