DE3605916C2 - - Google Patents
Info
- Publication number
- DE3605916C2 DE3605916C2 DE19863605916 DE3605916A DE3605916C2 DE 3605916 C2 DE3605916 C2 DE 3605916C2 DE 19863605916 DE19863605916 DE 19863605916 DE 3605916 A DE3605916 A DE 3605916A DE 3605916 C2 DE3605916 C2 DE 3605916C2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- metal layer
- layer
- thin metal
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
- G03F7/2039—X-ray radiation
Landscapes
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19863605916 DE3605916A1 (de) | 1986-02-25 | 1986-02-25 | Verfahren zur kontrasterhoehung bei der roentgenstrahl-lithographie und anordnung zur durchfuehrung des verfahrens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19863605916 DE3605916A1 (de) | 1986-02-25 | 1986-02-25 | Verfahren zur kontrasterhoehung bei der roentgenstrahl-lithographie und anordnung zur durchfuehrung des verfahrens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3605916A1 DE3605916A1 (de) | 1987-09-10 |
| DE3605916C2 true DE3605916C2 (https=) | 1988-08-11 |
Family
ID=6294827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863605916 Granted DE3605916A1 (de) | 1986-02-25 | 1986-02-25 | Verfahren zur kontrasterhoehung bei der roentgenstrahl-lithographie und anordnung zur durchfuehrung des verfahrens |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3605916A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682604B2 (ja) * | 1987-08-04 | 1994-10-19 | 三菱電機株式会社 | X線マスク |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4194233A (en) * | 1978-01-30 | 1980-03-18 | Rockwell International Corporation | Mask apparatus for fine-line lithography |
-
1986
- 1986-02-25 DE DE19863605916 patent/DE3605916A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3605916A1 (de) | 1987-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0078336B1 (de) | Schattenwurfmaske für die Ionenimplantation und die Ionenstrahllithographie | |
| DE3634147C2 (https=) | ||
| DE2819698C2 (de) | Verfahren zum Herstellen eines Festkörpermikrobauelementes und Vorrichtung zur Anwendung bei diesem Verfahren | |
| DE2922416A1 (de) | Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung | |
| DE69611540T2 (de) | Erzeugung von kontakten für halbleiterstrahlungsdetektoren und bildaufnahmevorrichtungen | |
| DE3000746C2 (de) | Verfahren zur Erzeugung von mikroskopischen Bildern | |
| DE2647242A1 (de) | Elektrolithographische vorrichtung | |
| DE2333787A1 (de) | Maskentraegersubstrat fuer weiche roentgenstrahlen | |
| DE3119682C2 (https=) | ||
| DE3820421C2 (https=) | ||
| DE3046856C2 (https=) | ||
| DE3103615A1 (de) | Verfahren zur erzeugung von extremen feinstrukturen | |
| EP0212054A2 (de) | Verfahren zur Herstellung von Masken für die Röntgentiefenlithographie | |
| DE3019851A1 (de) | Verfahren zur herstellung einer lithographie-maske und mit einem solchen verfahren hergestellte maske | |
| DE2832151C2 (de) | Verfahren zum Prüfen eines Musters aus einem elektrisch leitfähigen Film | |
| DE3524176A1 (de) | Lichtmaske und verfahren fuer ihre herstellung | |
| DE1489162C3 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE3605916C2 (https=) | ||
| DE3338717A1 (de) | Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie | |
| DE69031153T2 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
| DE3853305T2 (de) | Verfahren zur Herstellung von feinsten Strukturen in Lacken durch Elektronen- oder Röntgenstrahllithographie. | |
| DE3245868A1 (de) | Thermisch unempfindliche bestrahlungsmaske fuer roentgenlithographie und verfahren zur herstellung derartiger masken | |
| CH621890A5 (https=) | ||
| EP0104684B1 (de) | Maske für die Mustererzeugung in Lackschichten mittels Röntgenstrahllithographie und Verfahren zu ihrer Herstellung | |
| DE2807478A1 (de) | Belichtungsverfahren |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |