DE3581758D1 - Fehlerkorrigierte korpuskularstrahl-lithographie. - Google Patents
Fehlerkorrigierte korpuskularstrahl-lithographie.Info
- Publication number
- DE3581758D1 DE3581758D1 DE8585102832T DE3581758T DE3581758D1 DE 3581758 D1 DE3581758 D1 DE 3581758D1 DE 8585102832 T DE8585102832 T DE 8585102832T DE 3581758 T DE3581758 T DE 3581758T DE 3581758 D1 DE3581758 D1 DE 3581758D1
- Authority
- DE
- Germany
- Prior art keywords
- lithography
- error
- corrected
- rod
- corrected rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
- H01J2237/31794—Problems associated with lithography affecting masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
- H01J2237/31798—Problems associated with lithography detecting pattern defects
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE8585102832T DE3581758D1 (de) | 1984-03-24 | 1985-03-13 | Fehlerkorrigierte korpuskularstrahl-lithographie. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19843410885 DE3410885A1 (de) | 1984-03-24 | 1984-03-24 | Fehlerkorrigierte korpuskularstrahllithographie |
DE8585102832T DE3581758D1 (de) | 1984-03-24 | 1985-03-13 | Fehlerkorrigierte korpuskularstrahl-lithographie. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3581758D1 true DE3581758D1 (de) | 1991-03-28 |
Family
ID=6231503
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19843410885 Withdrawn DE3410885A1 (de) | 1984-03-24 | 1984-03-24 | Fehlerkorrigierte korpuskularstrahllithographie |
DE8585102832T Expired - Fee Related DE3581758D1 (de) | 1984-03-24 | 1985-03-13 | Fehlerkorrigierte korpuskularstrahl-lithographie. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19843410885 Withdrawn DE3410885A1 (de) | 1984-03-24 | 1984-03-24 | Fehlerkorrigierte korpuskularstrahllithographie |
Country Status (4)
Country | Link |
---|---|
US (1) | US4578587A (de) |
EP (1) | EP0158139B1 (de) |
JP (1) | JPS60201625A (de) |
DE (2) | DE3410885A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60201626A (ja) * | 1984-03-27 | 1985-10-12 | Canon Inc | 位置合わせ装置 |
AT386297B (de) * | 1985-09-11 | 1988-07-25 | Ims Ionen Mikrofab Syst | Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes |
JPS62260335A (ja) * | 1986-05-06 | 1987-11-12 | Hitachi Ltd | パタ−ン検査方法および装置 |
AT393925B (de) * | 1987-06-02 | 1992-01-10 | Ims Ionen Mikrofab Syst | Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind |
AT392857B (de) * | 1987-07-13 | 1991-06-25 | Ims Ionen Mikrofab Syst | Vorrichtung und verfahren zur inspektion einer maske |
US4885472A (en) * | 1988-03-14 | 1989-12-05 | The Perkin-Elmer Corporation | Silicon grid as a reference and calibration standard in a particle beam lithography system |
US5180919A (en) * | 1990-09-18 | 1993-01-19 | Fujitsu Limited | Electron beam exposure system having the capability of checking the pattern of an electron mask used for shaping an electron beam |
JP2725895B2 (ja) * | 1991-02-18 | 1998-03-11 | シャープ株式会社 | 露光機構 |
JP3274212B2 (ja) * | 1993-03-18 | 2002-04-15 | 株式会社日立製作所 | 電子線検出器及びそれを用いた電子線描画装置 |
JP2924635B2 (ja) * | 1994-03-16 | 1999-07-26 | 日本電気株式会社 | 半導体素子製造用レチクルおよび露光装置の製造誤差の補正方法 |
JP2001519040A (ja) | 1995-08-30 | 2001-10-16 | ドイッチェ テレコム アーゲー | 三次元表面の構造化におけるコントラストを向上させる方法 |
DE19630705A1 (de) | 1995-08-30 | 1997-03-20 | Deutsche Telekom Ag | Verfahren zur Herstellung von 3-dimensional strukturierten Polymerschichten für die integrierte Optik |
US6144037A (en) * | 1998-06-18 | 2000-11-07 | International Business Machines Corporation | Capacitor charging sensor |
US6353231B1 (en) | 1998-08-31 | 2002-03-05 | Nikon Corporation | Pinhole detector for electron intensity distribution |
US7423269B1 (en) * | 2005-02-26 | 2008-09-09 | Kla-Tencor Technologies Corporation | Automated feature analysis with off-axis tilting |
CN107078454A (zh) * | 2014-12-15 | 2017-08-18 | 极光先进雷射株式会社 | 激光照射装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3644700A (en) * | 1969-12-15 | 1972-02-22 | Ibm | Method and apparatus for controlling an electron beam |
DE2547079C3 (de) * | 1975-10-17 | 1979-12-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Korpuskularbestrahlung eines Präparats |
DE2702445C3 (de) * | 1977-01-20 | 1980-10-09 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Korpuskularstrahloptisches Gerät zur verkleinernden Abbildung einer Maske auf ein zu bestrahlendes Präparat |
DE2702444C3 (de) * | 1977-01-20 | 1980-10-09 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Korpuskularstrahloptisches Gerät zur Abbildung einer Maske auf ein Präparat |
DE2739502C3 (de) * | 1977-09-02 | 1980-07-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zur Belichtung durch Korpuskularstrahlen-Schattenwurf und Vorrichtung zur Durchführung des Verfahrens |
DE2939044A1 (de) * | 1979-09-27 | 1981-04-09 | Ibm Deutschland Gmbh, 7000 Stuttgart | Einrichtung fuer elektronenstrahllithographie |
US4543512A (en) * | 1980-10-15 | 1985-09-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Electron beam exposure system |
US4430571A (en) * | 1981-04-16 | 1984-02-07 | Control Data Corporation | Method and apparatus for exposing multi-level registered patterns interchangeably between stations of a multi-station electron-beam array lithography (EBAL) system |
US4443096A (en) * | 1981-05-18 | 1984-04-17 | Optimetrix Corporation | On machine reticle inspection device |
US4438338A (en) * | 1981-11-05 | 1984-03-20 | Burr-Brown Research Corporation | Low profile optical coupling for an optoelectronic module |
US4438336A (en) * | 1982-03-26 | 1984-03-20 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Corpuscular radiation device for producing an irradiation pattern on a workpiece |
-
1984
- 1984-03-24 DE DE19843410885 patent/DE3410885A1/de not_active Withdrawn
- 1984-12-19 JP JP59266582A patent/JPS60201625A/ja active Granted
-
1985
- 1985-01-25 US US06/694,888 patent/US4578587A/en not_active Expired - Fee Related
- 1985-03-13 DE DE8585102832T patent/DE3581758D1/de not_active Expired - Fee Related
- 1985-03-13 EP EP85102832A patent/EP0158139B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0158139B1 (de) | 1991-02-20 |
US4578587A (en) | 1986-03-25 |
JPH0349421B2 (de) | 1991-07-29 |
JPS60201625A (ja) | 1985-10-12 |
DE3410885A1 (de) | 1985-10-03 |
EP0158139A1 (de) | 1985-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |