DE3581758D1 - Fehlerkorrigierte korpuskularstrahl-lithographie. - Google Patents

Fehlerkorrigierte korpuskularstrahl-lithographie.

Info

Publication number
DE3581758D1
DE3581758D1 DE8585102832T DE3581758T DE3581758D1 DE 3581758 D1 DE3581758 D1 DE 3581758D1 DE 8585102832 T DE8585102832 T DE 8585102832T DE 3581758 T DE3581758 T DE 3581758T DE 3581758 D1 DE3581758 D1 DE 3581758D1
Authority
DE
Germany
Prior art keywords
lithography
error
corrected
rod
corrected rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585102832T
Other languages
English (en)
Inventor
Uwe Behringer
Harald Bohlen
Peter Nehmiz
Werner Zapka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to DE8585102832T priority Critical patent/DE3581758D1/de
Application granted granted Critical
Publication of DE3581758D1 publication Critical patent/DE3581758D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31794—Problems associated with lithography affecting masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31798—Problems associated with lithography detecting pattern defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE8585102832T 1984-03-24 1985-03-13 Fehlerkorrigierte korpuskularstrahl-lithographie. Expired - Fee Related DE3581758D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE8585102832T DE3581758D1 (de) 1984-03-24 1985-03-13 Fehlerkorrigierte korpuskularstrahl-lithographie.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19843410885 DE3410885A1 (de) 1984-03-24 1984-03-24 Fehlerkorrigierte korpuskularstrahllithographie
DE8585102832T DE3581758D1 (de) 1984-03-24 1985-03-13 Fehlerkorrigierte korpuskularstrahl-lithographie.

Publications (1)

Publication Number Publication Date
DE3581758D1 true DE3581758D1 (de) 1991-03-28

Family

ID=6231503

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19843410885 Withdrawn DE3410885A1 (de) 1984-03-24 1984-03-24 Fehlerkorrigierte korpuskularstrahllithographie
DE8585102832T Expired - Fee Related DE3581758D1 (de) 1984-03-24 1985-03-13 Fehlerkorrigierte korpuskularstrahl-lithographie.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19843410885 Withdrawn DE3410885A1 (de) 1984-03-24 1984-03-24 Fehlerkorrigierte korpuskularstrahllithographie

Country Status (4)

Country Link
US (1) US4578587A (de)
EP (1) EP0158139B1 (de)
JP (1) JPS60201625A (de)
DE (2) DE3410885A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201626A (ja) * 1984-03-27 1985-10-12 Canon Inc 位置合わせ装置
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes
JPS62260335A (ja) * 1986-05-06 1987-11-12 Hitachi Ltd パタ−ン検査方法および装置
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
AT392857B (de) * 1987-07-13 1991-06-25 Ims Ionen Mikrofab Syst Vorrichtung und verfahren zur inspektion einer maske
US4885472A (en) * 1988-03-14 1989-12-05 The Perkin-Elmer Corporation Silicon grid as a reference and calibration standard in a particle beam lithography system
US5180919A (en) * 1990-09-18 1993-01-19 Fujitsu Limited Electron beam exposure system having the capability of checking the pattern of an electron mask used for shaping an electron beam
JP2725895B2 (ja) * 1991-02-18 1998-03-11 シャープ株式会社 露光機構
JP3274212B2 (ja) * 1993-03-18 2002-04-15 株式会社日立製作所 電子線検出器及びそれを用いた電子線描画装置
JP2924635B2 (ja) * 1994-03-16 1999-07-26 日本電気株式会社 半導体素子製造用レチクルおよび露光装置の製造誤差の補正方法
JP2001519040A (ja) 1995-08-30 2001-10-16 ドイッチェ テレコム アーゲー 三次元表面の構造化におけるコントラストを向上させる方法
DE19630705A1 (de) 1995-08-30 1997-03-20 Deutsche Telekom Ag Verfahren zur Herstellung von 3-dimensional strukturierten Polymerschichten für die integrierte Optik
US6144037A (en) * 1998-06-18 2000-11-07 International Business Machines Corporation Capacitor charging sensor
US6353231B1 (en) 1998-08-31 2002-03-05 Nikon Corporation Pinhole detector for electron intensity distribution
US7423269B1 (en) * 2005-02-26 2008-09-09 Kla-Tencor Technologies Corporation Automated feature analysis with off-axis tilting
CN107078454A (zh) * 2014-12-15 2017-08-18 极光先进雷射株式会社 激光照射装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644700A (en) * 1969-12-15 1972-02-22 Ibm Method and apparatus for controlling an electron beam
DE2547079C3 (de) * 1975-10-17 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Korpuskularbestrahlung eines Präparats
DE2702445C3 (de) * 1977-01-20 1980-10-09 Siemens Ag, 1000 Berlin Und 8000 Muenchen Korpuskularstrahloptisches Gerät zur verkleinernden Abbildung einer Maske auf ein zu bestrahlendes Präparat
DE2702444C3 (de) * 1977-01-20 1980-10-09 Siemens Ag, 1000 Berlin Und 8000 Muenchen Korpuskularstrahloptisches Gerät zur Abbildung einer Maske auf ein Präparat
DE2739502C3 (de) * 1977-09-02 1980-07-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Belichtung durch Korpuskularstrahlen-Schattenwurf und Vorrichtung zur Durchführung des Verfahrens
DE2939044A1 (de) * 1979-09-27 1981-04-09 Ibm Deutschland Gmbh, 7000 Stuttgart Einrichtung fuer elektronenstrahllithographie
US4543512A (en) * 1980-10-15 1985-09-24 Tokyo Shibaura Denki Kabushiki Kaisha Electron beam exposure system
US4430571A (en) * 1981-04-16 1984-02-07 Control Data Corporation Method and apparatus for exposing multi-level registered patterns interchangeably between stations of a multi-station electron-beam array lithography (EBAL) system
US4443096A (en) * 1981-05-18 1984-04-17 Optimetrix Corporation On machine reticle inspection device
US4438338A (en) * 1981-11-05 1984-03-20 Burr-Brown Research Corporation Low profile optical coupling for an optoelectronic module
US4438336A (en) * 1982-03-26 1984-03-20 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Corpuscular radiation device for producing an irradiation pattern on a workpiece

Also Published As

Publication number Publication date
EP0158139B1 (de) 1991-02-20
US4578587A (en) 1986-03-25
JPH0349421B2 (de) 1991-07-29
JPS60201625A (ja) 1985-10-12
DE3410885A1 (de) 1985-10-03
EP0158139A1 (de) 1985-10-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee