DE3578269D1 - Als bildaufnahmevorrichtung verwendbarer photosensor. - Google Patents
Als bildaufnahmevorrichtung verwendbarer photosensor.Info
- Publication number
- DE3578269D1 DE3578269D1 DE8585306847T DE3578269T DE3578269D1 DE 3578269 D1 DE3578269 D1 DE 3578269D1 DE 8585306847 T DE8585306847 T DE 8585306847T DE 3578269 T DE3578269 T DE 3578269T DE 3578269 D1 DE3578269 D1 DE 3578269D1
- Authority
- DE
- Germany
- Prior art keywords
- recording device
- image recording
- photosensor used
- photosensor
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59204806A JPS6182466A (ja) | 1984-09-29 | 1984-09-29 | 光センサ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3578269D1 true DE3578269D1 (de) | 1990-07-19 |
Family
ID=16496670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585306847T Expired - Lifetime DE3578269D1 (de) | 1984-09-29 | 1985-09-26 | Als bildaufnahmevorrichtung verwendbarer photosensor. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4823178A (de) |
EP (1) | EP0177275B1 (de) |
JP (1) | JPS6182466A (de) |
KR (1) | KR900006952B1 (de) |
DE (1) | DE3578269D1 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2569053B2 (ja) * | 1987-06-26 | 1997-01-08 | キヤノン株式会社 | イメ−ジセンサ |
US4889983A (en) * | 1987-11-24 | 1989-12-26 | Mitsubishi Denki Kabushiki Kaisha | Image sensor and production method thereof |
WO1991003745A1 (en) * | 1989-09-06 | 1991-03-21 | University Of Michigan | Multi-element-amorphous-silicon-detector-array for real-time imaging and dosimetry of megavoltage photons and diagnostic x-rays |
JPH0734467B2 (ja) * | 1989-11-16 | 1995-04-12 | 富士ゼロックス株式会社 | イメージセンサ製造方法 |
US6008078A (en) * | 1990-07-24 | 1999-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
WO1992021151A2 (en) * | 1991-05-10 | 1992-11-26 | Q-Dot, Inc. | HIGH-SPEED PERISTALTIC CCD IMAGER WITH GaAs FET OUTPUT |
US5408113A (en) * | 1992-06-30 | 1995-04-18 | Ricoh Company, Ltd. | High sensitivity improved photoelectric imaging device with a high signal to noise ratio |
KR100382817B1 (ko) * | 1999-01-20 | 2003-05-09 | 엘지.필립스 엘시디 주식회사 | 생체감지패턴 및 이를 이용한 박막트랜지스터형 광센서 |
WO2003073159A1 (en) | 2002-02-20 | 2003-09-04 | Planar Systems, Inc. | Light sensitive display |
US7009663B2 (en) * | 2003-12-17 | 2006-03-07 | Planar Systems, Inc. | Integrated optical light sensitive active matrix liquid crystal display |
US7053967B2 (en) * | 2002-05-23 | 2006-05-30 | Planar Systems, Inc. | Light sensitive display |
US7023503B2 (en) * | 2002-02-20 | 2006-04-04 | Planar Systems, Inc. | Image sensor with photosensitive thin film transistors |
JP2003332560A (ja) * | 2002-05-13 | 2003-11-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及びマイクロプロセッサ |
JP4373063B2 (ja) | 2002-09-02 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
JP4094386B2 (ja) * | 2002-09-02 | 2008-06-04 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
JP4574118B2 (ja) * | 2003-02-12 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
US20080084374A1 (en) * | 2003-02-20 | 2008-04-10 | Planar Systems, Inc. | Light sensitive display |
US20080048995A1 (en) * | 2003-02-20 | 2008-02-28 | Planar Systems, Inc. | Light sensitive display |
US7773139B2 (en) * | 2004-04-16 | 2010-08-10 | Apple Inc. | Image sensor with photosensitive thin film transistors |
US20070109239A1 (en) * | 2005-11-14 | 2007-05-17 | Den Boer Willem | Integrated light sensitive liquid crystal display |
JP5131508B2 (ja) * | 2005-11-14 | 2013-01-30 | Nltテクノロジー株式会社 | 受光回路 |
US7688947B2 (en) * | 2006-10-17 | 2010-03-30 | Varian Medical Systems, Inc. | Method for reducing sensitivity modulation and lag in electronic imagers |
KR101441429B1 (ko) * | 2007-09-21 | 2014-09-18 | 삼성디스플레이 주식회사 | 센서 박막 트랜지스터 및 이를 포함하는 박막 트랜지스터기판, 박막 트랜지스터 기판의 제조 방법 |
US9310923B2 (en) | 2010-12-03 | 2016-04-12 | Apple Inc. | Input device for touch sensitive devices |
US8638320B2 (en) | 2011-06-22 | 2014-01-28 | Apple Inc. | Stylus orientation detection |
US8928635B2 (en) | 2011-06-22 | 2015-01-06 | Apple Inc. | Active stylus |
US9329703B2 (en) | 2011-06-22 | 2016-05-03 | Apple Inc. | Intelligent stylus |
US8889461B2 (en) | 2012-05-29 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | CIS image sensors with epitaxy layers and methods for forming the same |
US9652090B2 (en) | 2012-07-27 | 2017-05-16 | Apple Inc. | Device for digital communication through capacitive coupling |
US9557845B2 (en) | 2012-07-27 | 2017-01-31 | Apple Inc. | Input device for and method of communication with capacitive devices through frequency variation |
US9176604B2 (en) | 2012-07-27 | 2015-11-03 | Apple Inc. | Stylus device |
US10048775B2 (en) | 2013-03-14 | 2018-08-14 | Apple Inc. | Stylus detection and demodulation |
US10067580B2 (en) | 2013-07-31 | 2018-09-04 | Apple Inc. | Active stylus for use with touch controller architecture |
FR3026893B1 (fr) * | 2014-10-07 | 2018-01-12 | Saurea | Transistor a effet photovoltaique et moteur photovoltaique a puissance augmentee associe |
US10067618B2 (en) | 2014-12-04 | 2018-09-04 | Apple Inc. | Coarse scan and targeted active mode scan for touch |
US10474277B2 (en) | 2016-05-31 | 2019-11-12 | Apple Inc. | Position-based stylus communication |
WO2018077868A1 (en) | 2016-10-25 | 2018-05-03 | Trinamix Gmbh | Detector for an optical detection of at least one object |
CN107610604B (zh) * | 2017-09-25 | 2020-03-17 | 上海九山电子科技有限公司 | 一种led芯片、阵列基板、显示面板和显示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5739582B2 (de) * | 1974-09-13 | 1982-08-21 | ||
JPS5850030B2 (ja) * | 1979-03-08 | 1983-11-08 | 日本放送協会 | 光電変換装置およびそれを用いた固体撮像板 |
JPS55128884A (en) * | 1979-03-28 | 1980-10-06 | Hitachi Ltd | Semiconductor photodetector |
JPS56135981A (en) * | 1980-03-28 | 1981-10-23 | Canon Inc | Photoelectric conversion element |
JPS56138965A (en) * | 1980-03-31 | 1981-10-29 | Canon Inc | Photoelectric converter |
DE3112907A1 (de) * | 1980-03-31 | 1982-01-07 | Canon K.K., Tokyo | "fotoelektrischer festkoerper-umsetzer" |
JPS5746224A (en) * | 1980-09-03 | 1982-03-16 | Canon Inc | Lens system equipped with auxiliary lens |
US4517733A (en) * | 1981-01-06 | 1985-05-21 | Fuji Xerox Co., Ltd. | Process for fabricating thin film image pick-up element |
JPS57114292A (en) * | 1981-01-06 | 1982-07-16 | Fuji Xerox Co Ltd | Thin film image pickup element |
US4471371A (en) * | 1981-01-06 | 1984-09-11 | Fuji Xerox Co., Ltd. | Thin film image pickup element |
JPS5922360A (ja) * | 1982-07-28 | 1984-02-04 | Matsushita Electric Works Ltd | 光入力モス型トランジスタ |
JPS5925280A (ja) * | 1982-07-31 | 1984-02-09 | Matsushita Electric Works Ltd | 光入力mosトランジスタ |
US4651185A (en) * | 1983-08-15 | 1987-03-17 | Alphasil, Inc. | Method of manufacturing thin film transistors and transistors made thereby |
JPS60103676A (ja) * | 1983-11-11 | 1985-06-07 | Seiko Instr & Electronics Ltd | 薄膜トランジスタアレイの製造方法 |
US4598305A (en) * | 1984-06-18 | 1986-07-01 | Xerox Corporation | Depletion mode thin film semiconductor photodetectors |
-
1984
- 1984-09-29 JP JP59204806A patent/JPS6182466A/ja active Pending
-
1985
- 1985-09-24 KR KR1019850007015A patent/KR900006952B1/ko not_active IP Right Cessation
- 1985-09-26 DE DE8585306847T patent/DE3578269D1/de not_active Expired - Lifetime
- 1985-09-26 EP EP85306847A patent/EP0177275B1/de not_active Expired - Lifetime
- 1985-09-26 US US06/780,598 patent/US4823178A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6182466A (ja) | 1986-04-26 |
KR900006952B1 (ko) | 1990-09-25 |
EP0177275A2 (de) | 1986-04-09 |
KR860002741A (ko) | 1986-04-28 |
US4823178A (en) | 1989-04-18 |
EP0177275A3 (en) | 1988-09-07 |
EP0177275B1 (de) | 1990-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |