DE3578269D1 - Als bildaufnahmevorrichtung verwendbarer photosensor. - Google Patents

Als bildaufnahmevorrichtung verwendbarer photosensor.

Info

Publication number
DE3578269D1
DE3578269D1 DE8585306847T DE3578269T DE3578269D1 DE 3578269 D1 DE3578269 D1 DE 3578269D1 DE 8585306847 T DE8585306847 T DE 8585306847T DE 3578269 T DE3578269 T DE 3578269T DE 3578269 D1 DE3578269 D1 DE 3578269D1
Authority
DE
Germany
Prior art keywords
recording device
image recording
photosensor used
photosensor
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585306847T
Other languages
English (en)
Inventor
Yoshiyuki C O Patent Divi Suda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3578269D1 publication Critical patent/DE3578269D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
DE8585306847T 1984-09-29 1985-09-26 Als bildaufnahmevorrichtung verwendbarer photosensor. Expired - Lifetime DE3578269D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59204806A JPS6182466A (ja) 1984-09-29 1984-09-29 光センサ

Publications (1)

Publication Number Publication Date
DE3578269D1 true DE3578269D1 (de) 1990-07-19

Family

ID=16496670

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585306847T Expired - Lifetime DE3578269D1 (de) 1984-09-29 1985-09-26 Als bildaufnahmevorrichtung verwendbarer photosensor.

Country Status (5)

Country Link
US (1) US4823178A (de)
EP (1) EP0177275B1 (de)
JP (1) JPS6182466A (de)
KR (1) KR900006952B1 (de)
DE (1) DE3578269D1 (de)

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US4889983A (en) * 1987-11-24 1989-12-26 Mitsubishi Denki Kabushiki Kaisha Image sensor and production method thereof
JP3050402B2 (ja) * 1989-09-06 2000-06-12 ユニヴァースティ オブ ミシガン メガボルト光子および診断用ｘ線のリアルタイム画像処理および線量測定用多素子アモルファスシリコン検出器アレイ
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
US6008078A (en) * 1990-07-24 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
WO1992021151A2 (en) * 1991-05-10 1992-11-26 Q-Dot, Inc. HIGH-SPEED PERISTALTIC CCD IMAGER WITH GaAs FET OUTPUT
US5408113A (en) * 1992-06-30 1995-04-18 Ricoh Company, Ltd. High sensitivity improved photoelectric imaging device with a high signal to noise ratio
KR100382817B1 (ko) * 1999-01-20 2003-05-09 엘지.필립스 엘시디 주식회사 생체감지패턴 및 이를 이용한 박막트랜지스터형 광센서
US7053967B2 (en) * 2002-05-23 2006-05-30 Planar Systems, Inc. Light sensitive display
WO2003073159A1 (en) 2002-02-20 2003-09-04 Planar Systems, Inc. Light sensitive display
US7023503B2 (en) * 2002-02-20 2006-04-04 Planar Systems, Inc. Image sensor with photosensitive thin film transistors
US7009663B2 (en) * 2003-12-17 2006-03-07 Planar Systems, Inc. Integrated optical light sensitive active matrix liquid crystal display
JP2003332560A (ja) * 2002-05-13 2003-11-21 Semiconductor Energy Lab Co Ltd 半導体装置及びマイクロプロセッサ
JP4094386B2 (ja) * 2002-09-02 2008-06-04 株式会社半導体エネルギー研究所 電子回路装置
JP4373063B2 (ja) 2002-09-02 2009-11-25 株式会社半導体エネルギー研究所 電子回路装置
JP4574118B2 (ja) * 2003-02-12 2010-11-04 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US20080084374A1 (en) 2003-02-20 2008-04-10 Planar Systems, Inc. Light sensitive display
US20080048995A1 (en) * 2003-02-20 2008-02-28 Planar Systems, Inc. Light sensitive display
US7773139B2 (en) * 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
US20070109239A1 (en) * 2005-11-14 2007-05-17 Den Boer Willem Integrated light sensitive liquid crystal display
JP5131508B2 (ja) * 2005-11-14 2013-01-30 Ｎｌｔテクノロジー株式会社 受光回路
US7688947B2 (en) * 2006-10-17 2010-03-30 Varian Medical Systems, Inc. Method for reducing sensitivity modulation and lag in electronic imagers
KR101441429B1 (ko) * 2007-09-21 2014-09-18 삼성디스플레이 주식회사 센서 박막 트랜지스터 및 이를 포함하는 박막 트랜지스터기판, 박막 트랜지스터 기판의 제조 방법
US9310923B2 (en) 2010-12-03 2016-04-12 Apple Inc. Input device for touch sensitive devices
US8638320B2 (en) 2011-06-22 2014-01-28 Apple Inc. Stylus orientation detection
US9329703B2 (en) 2011-06-22 2016-05-03 Apple Inc. Intelligent stylus
US8928635B2 (en) 2011-06-22 2015-01-06 Apple Inc. Active stylus
US8889461B2 (en) 2012-05-29 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. CIS image sensors with epitaxy layers and methods for forming the same
US9557845B2 (en) 2012-07-27 2017-01-31 Apple Inc. Input device for and method of communication with capacitive devices through frequency variation
US9176604B2 (en) 2012-07-27 2015-11-03 Apple Inc. Stylus device
US9652090B2 (en) 2012-07-27 2017-05-16 Apple Inc. Device for digital communication through capacitive coupling
US10048775B2 (en) 2013-03-14 2018-08-14 Apple Inc. Stylus detection and demodulation
US10845901B2 (en) 2013-07-31 2020-11-24 Apple Inc. Touch controller architecture
FR3026893B1 (fr) * 2014-10-07 2018-01-12 Saurea Transistor a effet photovoltaique et moteur photovoltaique a puissance augmentee associe
US10061449B2 (en) 2014-12-04 2018-08-28 Apple Inc. Coarse scan and targeted active mode scan for touch and stylus
US10474277B2 (en) 2016-05-31 2019-11-12 Apple Inc. Position-based stylus communication
KR102431355B1 (ko) 2016-10-25 2022-08-10 트리나미엑스 게엠베하 적어도 하나의 대상체의 광학적 검출을 위한 검출기
CN107610604B (zh) * 2017-09-25 2020-03-17 上海九山电子科技有限公司 一种led芯片、阵列基板、显示面板和显示装置

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JPS5739582B2 (de) * 1974-09-13 1982-08-21
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
JPS55128884A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor photodetector
JPS56135981A (en) * 1980-03-28 1981-10-23 Canon Inc Photoelectric conversion element
DE3112907A1 (de) * 1980-03-31 1982-01-07 Canon K.K., Tokyo "fotoelektrischer festkoerper-umsetzer"
JPS56138965A (en) * 1980-03-31 1981-10-29 Canon Inc Photoelectric converter
JPS5746224A (en) * 1980-09-03 1982-03-16 Canon Inc Lens system equipped with auxiliary lens
US4471371A (en) * 1981-01-06 1984-09-11 Fuji Xerox Co., Ltd. Thin film image pickup element
US4517733A (en) * 1981-01-06 1985-05-21 Fuji Xerox Co., Ltd. Process for fabricating thin film image pick-up element
JPS57114292A (en) * 1981-01-06 1982-07-16 Fuji Xerox Co Ltd Thin film image pickup element
JPS5922360A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Works Ltd 光入力モス型トランジスタ
JPS5925280A (ja) * 1982-07-31 1984-02-09 Matsushita Electric Works Ltd 光入力ｍｏｓトランジスタ
US4651185A (en) * 1983-08-15 1987-03-17 Alphasil, Inc. Method of manufacturing thin film transistors and transistors made thereby
JPS60103676A (ja) * 1983-11-11 1985-06-07 Seiko Instr & Electronics Ltd 薄膜トランジスタアレイの製造方法
US4598305A (en) * 1984-06-18 1986-07-01 Xerox Corporation Depletion mode thin film semiconductor photodetectors

Also Published As

Publication number Publication date
KR900006952B1 (ko) 1990-09-25
US4823178A (en) 1989-04-18
EP0177275A3 (en) 1988-09-07
JPS6182466A (ja) 1986-04-26
KR860002741A (ko) 1986-04-28
EP0177275B1 (de) 1990-06-13
EP0177275A2 (de) 1986-04-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee