DE3572891D1 - Integrated circuits comprising a protection device against electrostatic discharges - Google Patents

Integrated circuits comprising a protection device against electrostatic discharges

Info

Publication number
DE3572891D1
DE3572891D1 DE8585202038T DE3572891T DE3572891D1 DE 3572891 D1 DE3572891 D1 DE 3572891D1 DE 8585202038 T DE8585202038 T DE 8585202038T DE 3572891 T DE3572891 T DE 3572891T DE 3572891 D1 DE3572891 D1 DE 3572891D1
Authority
DE
Germany
Prior art keywords
integrated circuits
protection device
device against
against electrostatic
electrostatic discharges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585202038T
Other languages
English (en)
Inventor
Claude Chapron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Radiotechnique Compelec RTC SA
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA, Philips Gloeilampenfabrieken NV filed Critical Radiotechnique Compelec RTC SA
Application granted granted Critical
Publication of DE3572891D1 publication Critical patent/DE3572891D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
DE8585202038T 1984-12-21 1985-12-10 Integrated circuits comprising a protection device against electrostatic discharges Expired DE3572891D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8419656A FR2575333B1 (fr) 1984-12-21 1984-12-21 Dispositif de protection d'un circuit integre contre les decharges electrostatiques

Publications (1)

Publication Number Publication Date
DE3572891D1 true DE3572891D1 (en) 1989-10-12

Family

ID=9310890

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585202038T Expired DE3572891D1 (en) 1984-12-21 1985-12-10 Integrated circuits comprising a protection device against electrostatic discharges

Country Status (5)

Country Link
US (1) US4903095A (de)
EP (1) EP0185426B1 (de)
JP (1) JPS61154154A (de)
DE (1) DE3572891D1 (de)
FR (1) FR2575333B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1236797B (it) * 1989-11-17 1993-04-02 St Microelectronics Srl Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.
US5070388A (en) * 1990-01-19 1991-12-03 Harris Corporation Trench-resident interconnect structure
US5138413A (en) * 1990-10-22 1992-08-11 Harris Corporation Piso electrostatic discharge protection device
US5451799A (en) * 1992-12-28 1995-09-19 Matsushita Electric Industrial Co., Ltd. MOS transistor for protection against electrostatic discharge
JP3155134B2 (ja) * 1993-10-27 2001-04-09 ローム株式会社 半導体装置
US5734192A (en) * 1995-12-22 1998-03-31 International Business Machines Corporation Trench isolation for active areas and first level conductors
JPH10303291A (ja) * 1997-04-25 1998-11-13 Nippon Steel Corp 半導体装置及びその製造方法
US9691750B2 (en) * 2015-01-30 2017-06-27 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and layout method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
DE2011701A1 (de) * 1970-03-12 1971-09-30 Licentia Gmbh Lateraltransistor
US3890634A (en) * 1970-10-23 1975-06-17 Philips Corp Transistor circuit
US3697828A (en) * 1970-12-03 1972-10-10 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
US4064527A (en) * 1976-09-20 1977-12-20 Intersil, Inc. Integrated circuit having a buried load device
DE2860654D1 (en) * 1977-09-08 1981-08-06 Gen Electric Co Ltd Planar pnpn semiconductor device of circular geometry and magnetic field sensor using such a device
JPS5572081A (en) * 1978-11-27 1980-05-30 Fujitsu Ltd Input clamping circuit
IT1111981B (it) * 1979-02-13 1986-01-13 Ates Componenti Elettron Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante
DE3035462A1 (de) * 1980-09-19 1982-05-13 Siemens AG, 1000 Berlin und 8000 München Halbleiterelement
IT1150062B (it) * 1980-11-19 1986-12-10 Ates Componenti Elettron Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione
NL8100347A (nl) * 1981-01-26 1982-08-16 Philips Nv Halfgeleiderinrichting met een beveiligingsinrichting.
JPS5843557A (ja) * 1981-09-08 1983-03-14 Toshiba Corp 半導体装置
EP0242383B1 (de) * 1985-10-15 1991-08-28 AT&T Corp. Schutz eines igfet integrierten schaltkreises vor elektrostatischer entladung

Also Published As

Publication number Publication date
EP0185426B1 (de) 1989-09-06
FR2575333A1 (fr) 1986-06-27
US4903095A (en) 1990-02-20
JPH0476507B2 (de) 1992-12-03
FR2575333B1 (fr) 1987-01-23
JPS61154154A (ja) 1986-07-12
EP0185426A1 (de) 1986-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee