DE3572262D1 - Method of manufacturing a bipolar transistor having emitter series resistors - Google Patents

Method of manufacturing a bipolar transistor having emitter series resistors

Info

Publication number
DE3572262D1
DE3572262D1 DE8585201640T DE3572262T DE3572262D1 DE 3572262 D1 DE3572262 D1 DE 3572262D1 DE 8585201640 T DE8585201640 T DE 8585201640T DE 3572262 T DE3572262 T DE 3572262T DE 3572262 D1 DE3572262 D1 DE 3572262D1
Authority
DE
Germany
Prior art keywords
manufacturing
bipolar transistor
series resistors
emitter series
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585201640T
Other languages
English (en)
Inventor
Petrus Martinus Albertus Moors
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3572262D1 publication Critical patent/DE3572262D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE8585201640T 1984-10-12 1985-10-09 Method of manufacturing a bipolar transistor having emitter series resistors Expired DE3572262D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8403111A NL8403111A (nl) 1984-10-12 1984-10-12 Werkwijze ter vervaardiging van een bipolaire transistor met emitterserieweerstanden, en transistor vervaardigd volgens de werkwijze.

Publications (1)

Publication Number Publication Date
DE3572262D1 true DE3572262D1 (en) 1989-09-14

Family

ID=19844601

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585201640T Expired DE3572262D1 (en) 1984-10-12 1985-10-09 Method of manufacturing a bipolar transistor having emitter series resistors

Country Status (5)

Country Link
US (1) US4762804A (de)
EP (1) EP0182400B1 (de)
JP (1) JPH0620069B2 (de)
DE (1) DE3572262D1 (de)
NL (1) NL8403111A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262048A (ja) * 1988-08-27 1990-03-01 Fuji Electric Co Ltd トランジスタ
US6064109A (en) * 1992-10-08 2000-05-16 Sgs-Thomson Microelectronics, Inc. Ballast resistance for producing varied emitter current flow along the emitter's injecting edge
DE69322226T2 (de) * 1992-10-08 1999-05-20 Stmicroelectronics, Inc., Carrollton, Tex. Integriertes Dünnschichtverfahren zur Erlangung von hohen Ballastwerten für Überlagerungsstrukturen
US5684326A (en) * 1995-02-24 1997-11-04 Telefonaktiebolaget L.M. Ericsson Emitter ballast bypass for radio frequency power transistors
JP4949650B2 (ja) * 2005-07-13 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL164703C (nl) * 1968-06-21 1981-01-15 Philips Nv Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen.
US3896475A (en) * 1972-01-28 1975-07-22 Philips Corp Semiconductor device comprising resistance region having portions lateral to conductors
JPS5846863B2 (ja) * 1977-08-25 1983-10-19 松下電器産業株式会社 半導体集積回路装置
JPS5459074A (en) * 1977-10-20 1979-05-12 Toshiba Corp Semiconductor device
US4253107A (en) * 1978-10-06 1981-02-24 Sprague Electric Company Integrated circuit with ion implanted hall-cell
JPS55138267A (en) * 1979-04-12 1980-10-28 Matsushita Electric Ind Co Ltd Manufacture of semiconductor integrated circuit containing resistance element
JPS55140260A (en) * 1979-04-16 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5852347B2 (ja) * 1980-02-04 1983-11-22 株式会社日立製作所 高耐圧半導体装置
DE3165937D1 (en) * 1981-04-14 1984-10-18 Itt Ind Gmbh Deutsche Method of making an integrated planar transistor
US4566176A (en) * 1984-05-23 1986-01-28 U.S. Philips Corporation Method of manufacturing transistors
US4654687A (en) * 1985-03-28 1987-03-31 Francois Hebert High frequency bipolar transistor structures

Also Published As

Publication number Publication date
EP0182400B1 (de) 1989-08-09
JPS6195565A (ja) 1986-05-14
JPH0620069B2 (ja) 1994-03-16
US4762804A (en) 1988-08-09
EP0182400A1 (de) 1986-05-28
NL8403111A (nl) 1986-05-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee