DE3572262D1 - Method of manufacturing a bipolar transistor having emitter series resistors - Google Patents
Method of manufacturing a bipolar transistor having emitter series resistorsInfo
- Publication number
- DE3572262D1 DE3572262D1 DE8585201640T DE3572262T DE3572262D1 DE 3572262 D1 DE3572262 D1 DE 3572262D1 DE 8585201640 T DE8585201640 T DE 8585201640T DE 3572262 T DE3572262 T DE 3572262T DE 3572262 D1 DE3572262 D1 DE 3572262D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- bipolar transistor
- series resistors
- emitter series
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
- H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0813—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8403111A NL8403111A (nl) | 1984-10-12 | 1984-10-12 | Werkwijze ter vervaardiging van een bipolaire transistor met emitterserieweerstanden, en transistor vervaardigd volgens de werkwijze. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3572262D1 true DE3572262D1 (en) | 1989-09-14 |
Family
ID=19844601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585201640T Expired DE3572262D1 (en) | 1984-10-12 | 1985-10-09 | Method of manufacturing a bipolar transistor having emitter series resistors |
Country Status (5)
Country | Link |
---|---|
US (1) | US4762804A (de) |
EP (1) | EP0182400B1 (de) |
JP (1) | JPH0620069B2 (de) |
DE (1) | DE3572262D1 (de) |
NL (1) | NL8403111A (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0262048A (ja) * | 1988-08-27 | 1990-03-01 | Fuji Electric Co Ltd | トランジスタ |
US6064109A (en) * | 1992-10-08 | 2000-05-16 | Sgs-Thomson Microelectronics, Inc. | Ballast resistance for producing varied emitter current flow along the emitter's injecting edge |
DE69322226T2 (de) * | 1992-10-08 | 1999-05-20 | Stmicroelectronics, Inc., Carrollton, Tex. | Integriertes Dünnschichtverfahren zur Erlangung von hohen Ballastwerten für Überlagerungsstrukturen |
US5684326A (en) * | 1995-02-24 | 1997-11-04 | Telefonaktiebolaget L.M. Ericsson | Emitter ballast bypass for radio frequency power transistors |
JP4949650B2 (ja) * | 2005-07-13 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL164703C (nl) * | 1968-06-21 | 1981-01-15 | Philips Nv | Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen. |
US3896475A (en) * | 1972-01-28 | 1975-07-22 | Philips Corp | Semiconductor device comprising resistance region having portions lateral to conductors |
JPS5846863B2 (ja) * | 1977-08-25 | 1983-10-19 | 松下電器産業株式会社 | 半導体集積回路装置 |
JPS5459074A (en) * | 1977-10-20 | 1979-05-12 | Toshiba Corp | Semiconductor device |
US4253107A (en) * | 1978-10-06 | 1981-02-24 | Sprague Electric Company | Integrated circuit with ion implanted hall-cell |
JPS55138267A (en) * | 1979-04-12 | 1980-10-28 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit containing resistance element |
JPS55140260A (en) * | 1979-04-16 | 1980-11-01 | Fujitsu Ltd | Semiconductor device |
JPS5852347B2 (ja) * | 1980-02-04 | 1983-11-22 | 株式会社日立製作所 | 高耐圧半導体装置 |
DE3165937D1 (en) * | 1981-04-14 | 1984-10-18 | Itt Ind Gmbh Deutsche | Method of making an integrated planar transistor |
US4566176A (en) * | 1984-05-23 | 1986-01-28 | U.S. Philips Corporation | Method of manufacturing transistors |
US4654687A (en) * | 1985-03-28 | 1987-03-31 | Francois Hebert | High frequency bipolar transistor structures |
-
1984
- 1984-10-12 NL NL8403111A patent/NL8403111A/nl not_active Application Discontinuation
-
1985
- 1985-10-09 JP JP60223857A patent/JPH0620069B2/ja not_active Expired - Lifetime
- 1985-10-09 EP EP85201640A patent/EP0182400B1/de not_active Expired
- 1985-10-09 DE DE8585201640T patent/DE3572262D1/de not_active Expired
-
1987
- 1987-01-23 US US07/008,111 patent/US4762804A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0182400B1 (de) | 1989-08-09 |
JPS6195565A (ja) | 1986-05-14 |
JPH0620069B2 (ja) | 1994-03-16 |
US4762804A (en) | 1988-08-09 |
EP0182400A1 (de) | 1986-05-28 |
NL8403111A (nl) | 1986-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |