DE3567555D1 - An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact - Google Patents

An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact

Info

Publication number
DE3567555D1
DE3567555D1 DE8585107128T DE3567555T DE3567555D1 DE 3567555 D1 DE3567555 D1 DE 3567555D1 DE 8585107128 T DE8585107128 T DE 8585107128T DE 3567555 T DE3567555 T DE 3567555T DE 3567555 D1 DE3567555 D1 DE 3567555D1
Authority
DE
Germany
Prior art keywords
contact
providing
compound semiconductor
intermetallic compound
ohmic contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585107128T
Other languages
English (en)
Inventor
Thomas Nelson Jackson
Peter Daniel Kirchner
George David Pettit
Jerry Macpherson Woodall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3567555D1 publication Critical patent/DE3567555D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/915—Amphoteric doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8585107128T 1984-06-14 1985-06-11 An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact Expired DE3567555D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/620,591 US4583110A (en) 1984-06-14 1984-06-14 Intermetallic semiconductor ohmic contact

Publications (1)

Publication Number Publication Date
DE3567555D1 true DE3567555D1 (en) 1989-02-16

Family

ID=24486543

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585107128T Expired DE3567555D1 (en) 1984-06-14 1985-06-11 An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact

Country Status (4)

Country Link
US (1) US4583110A (de)
EP (1) EP0164720B1 (de)
JP (1) JPH0654808B2 (de)
DE (1) DE3567555D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666454B2 (ja) * 1985-04-23 1994-08-24 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション ▲ｉｉｉ▼―▲ｖ▼族半導体デバイス
US4794444A (en) * 1986-04-10 1988-12-27 General Electric Company Ohmic contact and method for making same
US4772934A (en) * 1986-06-06 1988-09-20 American Telephone And Telegraph Company, At&T Bell Laboratories Delta-doped ohmic metal to semiconductor contacts
US4780748A (en) * 1986-06-06 1988-10-25 American Telephone & Telegraph Company, At&T Bell Laboratories Field-effect transistor having a delta-doped ohmic contact
US5098859A (en) * 1986-06-19 1992-03-24 International Business Machines Corporation Method for forming distributed barrier compound semiconductor contacts
US5045408A (en) * 1986-09-19 1991-09-03 University Of California Thermodynamically stabilized conductor/compound semiconductor interfaces
US4833042A (en) * 1988-01-27 1989-05-23 Rockwell International Corporation Nonalloyed ohmic contacts for n type gallium arsenide
US5024967A (en) * 1989-06-30 1991-06-18 At&T Bell Laboratories Doping procedures for semiconductor devices
US5013685A (en) * 1989-11-02 1991-05-07 At&T Bell Laboratories Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon
US5063174A (en) * 1990-09-18 1991-11-05 Polaroid Corporation Si/Au/Ni alloyed ohmic contact to n-GaAs and fabricating process therefor
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
JPH07307306A (ja) * 1994-05-10 1995-11-21 Nissan Motor Co Ltd 半導体装置の製造方法
SE9600199D0 (sv) * 1996-01-19 1996-01-19 Abb Research Ltd A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer
WO2003036697A2 (en) * 2001-10-22 2003-05-01 Yale University Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
US7179731B2 (en) * 2002-01-22 2007-02-20 Eric Harmon Hypercontacting
US6833556B2 (en) * 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US20080087906A1 (en) * 2005-02-25 2008-04-17 Dowa Electronics Materials Co., Ltd. Algaas-Based Light Emitting Diode Having Double Hetero Junction and Manufacturing Method of the Same
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
DE112017005855T5 (de) 2016-11-18 2019-08-01 Acorn Technologies, Inc. Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe
US11417523B2 (en) 2018-01-29 2022-08-16 Northwestern University Amphoteric p-type and n-type doping of group III-VI semiconductors with group-IV atoms

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2230078B1 (de) * 1973-05-18 1977-07-29 Radiotechnique Compelec
US3914785A (en) * 1973-12-03 1975-10-21 Bell Telephone Labor Inc Germanium doped GaAs layer as an ohmic contact
US3959036A (en) * 1973-12-03 1976-05-25 Bell Telephone Laboratories, Incorporated Method for the production of a germanium doped gas contact layer
US3984261A (en) * 1974-06-10 1976-10-05 Rca Corporation Ohmic contact
US4011583A (en) * 1974-09-03 1977-03-08 Bell Telephone Laboratories, Incorporated Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors
US4024569A (en) * 1975-01-08 1977-05-17 Rca Corporation Semiconductor ohmic contact
US4223336A (en) * 1978-03-14 1980-09-16 Microwave Semiconductor Corp. Low resistivity ohmic contacts for compound semiconductor devices
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
US4188710A (en) * 1978-08-11 1980-02-19 The United States Of America As Represented By The Secretary Of The Navy Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
US4414561A (en) * 1979-09-27 1983-11-08 Bell Telephone Laboratories, Incorporated Beryllium-gold ohmic contact to a semiconductor device
US4426765A (en) * 1981-08-24 1984-01-24 Trw Inc. Process for fabrication of ohmic contacts in compound semiconductor devices
JPS6015970A (ja) * 1983-07-08 1985-01-26 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JPS614278A (ja) 1986-01-10
JPH0654808B2 (ja) 1994-07-20
EP0164720A3 (en) 1987-08-26
EP0164720A2 (de) 1985-12-18
US4583110A (en) 1986-04-15
EP0164720B1 (de) 1989-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee