DE3482753D1 - Druckmessfuehler. - Google Patents

Druckmessfuehler.

Info

Publication number
DE3482753D1
DE3482753D1 DE8484112321T DE3482753T DE3482753D1 DE 3482753 D1 DE3482753 D1 DE 3482753D1 DE 8484112321 T DE8484112321 T DE 8484112321T DE 3482753 T DE3482753 T DE 3482753T DE 3482753 D1 DE3482753 D1 DE 3482753D1
Authority
DE
Germany
Prior art keywords
pressure measurement
measurement
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484112321T
Other languages
English (en)
Inventor
Isao Shimizu
Kazuo Hoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3482753D1 publication Critical patent/DE3482753D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
DE8484112321T 1983-12-16 1984-10-12 Druckmessfuehler. Expired - Lifetime DE3482753D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58236152A JPS60128673A (ja) 1983-12-16 1983-12-16 半導体感圧装置

Publications (1)

Publication Number Publication Date
DE3482753D1 true DE3482753D1 (de) 1990-08-23

Family

ID=16996528

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484112321T Expired - Lifetime DE3482753D1 (de) 1983-12-16 1984-10-12 Druckmessfuehler.

Country Status (7)

Country Link
US (1) US4672411A (de)
EP (1) EP0146709B1 (de)
JP (1) JPS60128673A (de)
KR (1) KR930003148B1 (de)
DE (1) DE3482753D1 (de)
HK (1) HK107391A (de)
SG (1) SG97391G (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0195232B1 (de) * 1985-03-20 1991-12-11 Hitachi, Ltd. Piezoresistiver Belastungsfühler
FR2594546B1 (fr) * 1986-02-19 1988-09-23 Flopetrol Dispositif de mesure de la temperature du diaphragme d'un capteur de pression
IT206925Z2 (it) * 1986-03-10 1987-10-19 Marelli Autronica Sensore a filo spesso in particolare sensore di pressione
JPH0197827A (ja) * 1987-07-08 1989-04-17 Ricoh Co Ltd 半導体拡散型力覚センサ
DE3814348A1 (de) * 1988-04-28 1989-11-09 Philips Patentverwaltung Verfahren zur herstellung einer polykristallinen halbleitenden widerstandsschicht aus silicium auf einem siliciumtraeger
US4977101A (en) * 1988-05-02 1990-12-11 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
US4885621A (en) * 1988-05-02 1989-12-05 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
FR2633133B1 (fr) * 1988-06-17 1990-10-05 Thomson Csf Procede de regulation du remplissage de la memoire tampon d'un codeur d'images, et dispositif de regulation pour la mise en oeuvre de ce procede
US5012316A (en) * 1989-03-28 1991-04-30 Cardiac Pacemakers, Inc. Multiaxial transducer interconnection apparatus
US5170237A (en) * 1989-11-06 1992-12-08 Matsushita Electronics Corporation Semiconductor pressure sensor
US5289721A (en) * 1990-09-10 1994-03-01 Nippondenso Co., Ltd. Semiconductor pressure sensor
DE4137624A1 (de) * 1991-11-15 1993-05-19 Bosch Gmbh Robert Silizium-chip zur verwendung in einem kraftsensor
US5432372A (en) * 1993-01-14 1995-07-11 Yamatake-Honeywell Co., Ltd. Semiconductor pressure sensor
DE4309207C2 (de) * 1993-03-22 1996-07-11 Texas Instruments Deutschland Halbleitervorrichtung mit einem piezoresistiven Drucksensor
US5508231A (en) * 1994-03-07 1996-04-16 National Semiconductor Corporation Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits
DE4409687A1 (de) * 1994-03-16 1995-09-21 Mitsubishi Electric Corp Halbleiter-Drucksensor und Verfahren zu dessen Herstellung
JP3344138B2 (ja) * 1995-01-30 2002-11-11 株式会社日立製作所 半導体複合センサ
US6150917A (en) * 1995-02-27 2000-11-21 Motorola, Inc. Piezoresistive sensor bridge having overlapping diffused regions to accommodate mask misalignment and method
JP3624597B2 (ja) * 1996-12-10 2005-03-02 株式会社デンソー 半導体装置及びその製造方法
DE19701055B4 (de) 1997-01-15 2016-04-28 Robert Bosch Gmbh Halbleiter-Drucksensor
US5812047A (en) * 1997-02-18 1998-09-22 Exar Corporation Offset-free resistor geometry for use in piezo-resistive pressure sensor
US20020003274A1 (en) * 1998-08-27 2002-01-10 Janusz Bryzek Piezoresistive sensor with epi-pocket isolation
US6796396B2 (en) * 1999-06-04 2004-09-28 Deka Products Limited Partnership Personal transporter
US6838303B2 (en) * 2003-03-19 2005-01-04 Asia Pacific Microsystems, Inc. Silicon pressure sensor and the manufacturing method thereof
DE102004023063A1 (de) * 2004-05-11 2005-12-01 Robert Bosch Gmbh Mikromechanische piezoresistive Drucksensorenvorrichtung
JP4925306B2 (ja) * 2007-02-28 2012-04-25 株式会社山武 圧力センサ
US20090055033A1 (en) * 2007-08-23 2009-02-26 Segway Inc. Apparatus and methods for fault detection at vehicle startup
JP5248439B2 (ja) * 2009-07-28 2013-07-31 アルプス電気株式会社 半導体圧力センサ及びその製造方法
EP2490036B1 (de) 2011-02-18 2013-08-28 Melexis Technologies NV Stresssensor zur Erfassung mechanischer Spannungen in einem Halbleiterchip und stresskompensierter Hallsensor
CH704509A1 (de) * 2011-02-18 2012-08-31 Melexis Tessenderlo Nv Stresssensor zur Erfassung mechanischer Spannungen in einem Halbleiterchip und stresskompensierter Hallsensor.
US9557230B2 (en) 2011-10-21 2017-01-31 Csem Centre Suisse D'electronique Et De Microtechnique Sa—Recherche Et Developpement SiC high temperature pressure transducer
US10317297B2 (en) 2013-12-11 2019-06-11 Melexis Technologies Nv Semiconductor pressure sensor
GB2521163A (en) 2013-12-11 2015-06-17 Melexis Technologies Nv Semiconductor pressure sensor
EP3032235B1 (de) 2014-12-10 2017-09-20 Melexis Technologies NV Halbleiterdrucksensor
DE102018200064A1 (de) * 2018-01-04 2019-07-04 Robert Bosch Gmbh Sensorvorrichtung und Verfahren zum Herstellen einer Sensorvorrichtung
US11099093B2 (en) * 2019-08-09 2021-08-24 Rosemount Aerospace Inc. Thermally-matched piezoresistive elements in bridges
US11650110B2 (en) * 2020-11-04 2023-05-16 Honeywell International Inc. Rosette piezo-resistive gauge circuit for thermally compensated measurement of full stress tensor
CN112505438B (zh) * 2020-11-26 2021-12-07 清华大学 基于静电力和压阻效应的微型电场传感器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079508A (en) * 1975-08-13 1978-03-21 The Board Of Trustees Of The Leland Stanford Junior University Miniature absolute pressure transducer assembly and method
DD133714A1 (de) * 1977-12-29 1979-01-17 Frank Loeffler Silizium-biegeplatte mit integrierten piezoresistiven halbleiter-dehnmesselementen
DE2856708A1 (de) * 1978-12-29 1980-07-10 Siemens Ag Messanordnung fuer einen druck-messumformer
JPS55112864U (de) * 1979-02-02 1980-08-08
US4317126A (en) * 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
US4332000A (en) * 1980-10-03 1982-05-25 International Business Machines Corporation Capacitive pressure transducer
US4345477A (en) * 1980-12-03 1982-08-24 Honeywell Inc. Semiconduction stress sensing apparatus
US4516148A (en) * 1982-08-30 1985-05-07 The Board Of Trustees Of The Leland Stanford, Jr. University Semiconductor device having improved lead attachment

Also Published As

Publication number Publication date
US4672411A (en) 1987-06-09
EP0146709B1 (de) 1990-07-18
EP0146709A2 (de) 1985-07-03
JPS60128673A (ja) 1985-07-09
KR850005144A (ko) 1985-08-21
EP0146709A3 (en) 1988-09-07
KR930003148B1 (ko) 1993-04-22
SG97391G (en) 1992-01-17
HK107391A (en) 1992-01-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee