DE3477023D1 - Method of monitoring single crystal during growth - Google Patents

Method of monitoring single crystal during growth

Info

Publication number
DE3477023D1
DE3477023D1 DE8484115476T DE3477023T DE3477023D1 DE 3477023 D1 DE3477023 D1 DE 3477023D1 DE 8484115476 T DE8484115476 T DE 8484115476T DE 3477023 T DE3477023 T DE 3477023T DE 3477023 D1 DE3477023 D1 DE 3477023D1
Authority
DE
Germany
Prior art keywords
single crystal
during growth
crystal during
monitoring single
monitoring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484115476T
Other languages
English (en)
Inventor
Masami C O Osaka Works Tatsumi
Shin-Ichi C O Osaka Wor Sawada
Ryusuke C O Osaka Works Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3477023D1 publication Critical patent/DE3477023D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8484115476T 1983-12-16 1984-12-14 Method of monitoring single crystal during growth Expired DE3477023D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58237669A JPS60131900A (ja) 1983-12-16 1983-12-16 単結晶の製造方法

Publications (1)

Publication Number Publication Date
DE3477023D1 true DE3477023D1 (en) 1989-04-13

Family

ID=17018746

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484115476T Expired DE3477023D1 (en) 1983-12-16 1984-12-14 Method of monitoring single crystal during growth

Country Status (4)

Country Link
US (1) US4634490A (de)
EP (1) EP0146132B1 (de)
JP (1) JPS60131900A (de)
DE (1) DE3477023D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8607482D0 (en) * 1986-03-26 1986-04-30 Howe S Orientation of crystals
JPH0318747A (ja) * 1989-06-16 1991-01-28 Nippon Philips Kk 格子定数比測定方法及び測定装置
US5456205A (en) * 1993-06-01 1995-10-10 Midwest Research Institute System for monitoring the growth of crystalline films on stationary substrates
US5589690A (en) * 1995-03-21 1996-12-31 National Institute Of Standards And Technology Apparatus and method for monitoring casting process
DE19548845B4 (de) * 1995-12-27 2008-04-10 Crystal Growing Systems Gmbh Vorrichtung und Verfahren zum Ziehen von Einkristallen nach dem Czochralski-Verfahren
US5724401A (en) * 1996-01-24 1998-03-03 The Penn State Research Foundation Large angle solid state position sensitive x-ray detector system
US6055293A (en) * 1998-06-30 2000-04-25 Seh America, Inc. Method for identifying desired features in a crystal
JP4071476B2 (ja) * 2001-03-21 2008-04-02 株式会社東芝 半導体ウェーハ及び半導体ウェーハの製造方法
JP4799465B2 (ja) * 2001-03-21 2011-10-26 株式会社東芝 半導体ウェーハ、半導体装置の製造装置、半導体装置の製造方法、及び半導体ウェーハの製造方法
US6836532B2 (en) * 2001-06-29 2004-12-28 Bruker Axs, Inc. Diffraction system for biological crystal screening
US6760403B2 (en) 2001-10-25 2004-07-06 Seh America, Inc. Method and apparatus for orienting a crystalline body during radiation diffractometry
JP4020313B2 (ja) * 2003-03-28 2007-12-12 ステラケミファ株式会社 フッ化物中の不純物及び色中心分析方法及び単結晶育成用材料の製造方法
DE10317677A1 (de) * 2003-04-17 2004-11-18 Bruker Axs Gmbh Primärstrahlfänger
US7027557B2 (en) * 2004-05-13 2006-04-11 Jorge Llacer Method for assisted beam selection in radiation therapy planning
WO2011062217A1 (ja) 2009-11-20 2011-05-26 戸田工業株式会社 磁性酸化鉄微粒子粉末、磁性粒子含有水分散体およびその製造方法
US20120131766A1 (en) * 2010-10-01 2012-05-31 Max Era, Inc. Sheet Wafer Defect Mitigation
JP2023528303A (ja) * 2020-05-22 2023-07-04 フラウンホーファー ユーエスエイ インコーポレイテッド 機械学習を用いたダイヤモンドの合成システムおよび方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105901A (en) * 1959-03-30 1963-10-01 Philips Corp X-ray diffraction device with 360 rotatable specimen holder
NL6512921A (de) * 1965-10-06 1967-04-07
JPS59174598A (ja) * 1983-03-18 1984-10-03 Hitachi Cable Ltd ３−５族化合物半導体単結晶の製造法

Also Published As

Publication number Publication date
US4634490A (en) 1987-01-06
EP0146132A3 (en) 1986-06-11
EP0146132A2 (de) 1985-06-26
JPH0479996B2 (de) 1992-12-17
EP0146132B1 (de) 1989-03-08
JPS60131900A (ja) 1985-07-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee