DE3477022D1 - Laser induced chemical etching of metals with excimer lasers - Google Patents
Laser induced chemical etching of metals with excimer lasersInfo
- Publication number
- DE3477022D1 DE3477022D1 DE8484115012T DE3477022T DE3477022D1 DE 3477022 D1 DE3477022 D1 DE 3477022D1 DE 8484115012 T DE8484115012 T DE 8484115012T DE 3477022 T DE3477022 T DE 3477022T DE 3477022 D1 DE3477022 D1 DE 3477022D1
- Authority
- DE
- Germany
- Prior art keywords
- metals
- chemical etching
- laser induced
- excimer lasers
- induced chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- C23F4/02—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by evaporation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/573,452 US4490211A (en) | 1984-01-24 | 1984-01-24 | Laser induced chemical etching of metals with excimer lasers |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3477022D1 true DE3477022D1 (en) | 1989-04-13 |
Family
ID=24292051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484115012T Expired DE3477022D1 (en) | 1984-01-24 | 1984-12-11 | Laser induced chemical etching of metals with excimer lasers |
Country Status (4)
Country | Link |
---|---|
US (1) | US4490211A (de) |
EP (1) | EP0149779B1 (de) |
JP (1) | JPS60187026A (de) |
DE (1) | DE3477022D1 (de) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4490211A (en) * | 1984-01-24 | 1984-12-25 | International Business Machines Corporation | Laser induced chemical etching of metals with excimer lasers |
JPH07107190B2 (ja) * | 1984-03-30 | 1995-11-15 | キヤノン株式会社 | 光化学気相成長方法 |
US4713518A (en) * | 1984-06-08 | 1987-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device manufacturing methods |
KR920004171B1 (ko) * | 1984-07-11 | 1992-05-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 드라이에칭장치 |
DE3437056A1 (de) * | 1984-10-09 | 1986-04-10 | Dieter Prof. Dr. Linz Bäuerle | Aetzverfahren fuer koerper aus dielektrischer oxidkeramik bzw. dielektrische oxidische (ein-)kristalle |
US4566937A (en) * | 1984-10-10 | 1986-01-28 | The United States Of America As Represented By The United States Department Of Energy | Electron beam enhanced surface modification for making highly resolved structures |
US4643799A (en) * | 1984-12-26 | 1987-02-17 | Hitachi, Ltd. | Method of dry etching |
US4615765A (en) * | 1985-02-01 | 1986-10-07 | General Electric Company | Self-registered, thermal processing technique using a pulsed heat source |
US4685976A (en) * | 1985-04-10 | 1987-08-11 | Eaton Corporation | Multi-layer semiconductor processing with scavenging between layers by excimer laser |
US4622095A (en) * | 1985-10-18 | 1986-11-11 | Ibm Corporation | Laser stimulated halogen gas etching of metal substrates |
US4684437A (en) * | 1985-10-31 | 1987-08-04 | International Business Machines Corporation | Selective metal etching in metal/polymer structures |
JPS62262433A (ja) * | 1986-05-09 | 1987-11-14 | Hitachi Ltd | 表面処理方法 |
JP2683687B2 (ja) * | 1986-08-08 | 1997-12-03 | 株式会社 半導体エネルギー研究所 | 光加工方法 |
US4684436A (en) * | 1986-10-29 | 1987-08-04 | International Business Machines Corp. | Method of simultaneously etching personality and select |
US4687539A (en) * | 1986-10-29 | 1987-08-18 | International Business Machines Corp. | End point detection and control of laser induced dry chemical etching |
US4923772A (en) * | 1986-10-29 | 1990-05-08 | Kirch Steven J | High energy laser mask and method of making same |
US5013399A (en) * | 1987-01-22 | 1991-05-07 | Fuji Photo Film Co., Ltd. | Method of preparing support for lithographic printing plate |
US5024724A (en) * | 1987-03-27 | 1991-06-18 | Sanyo Electric Co., Ltd. | Dry-etching method |
US4838989A (en) * | 1987-08-25 | 1989-06-13 | The United States Of America As Represented By The United States Department Of Energy | Laser-driven fusion etching process |
DE3731398A1 (de) * | 1987-09-18 | 1989-04-06 | Zeiss Carl Fa | Verfahren zum erzeugen einer kennzeichnung und/oder markierung auf einer brillenlinse |
US4888203A (en) * | 1987-11-13 | 1989-12-19 | Massachusetts Institute Of Technology | Hydrolysis-induced vapor deposition of oxide films |
US5310624A (en) * | 1988-01-29 | 1994-05-10 | Massachusetts Institute Of Technology | Integrated circuit micro-fabrication using dry lithographic processes |
US4898650A (en) * | 1988-05-10 | 1990-02-06 | Amp Incorporated | Laser cleaning of metal stock |
NO894656L (no) * | 1989-02-07 | 1990-08-08 | Autodisplay As | Fremgangsmaate for fremstilling av et elektrodemoenster paa et substrat. |
US4940508A (en) * | 1989-06-26 | 1990-07-10 | Digital Equipment Corporation | Apparatus and method for forming die sites in a high density electrical interconnecting structure |
EP0418540A3 (en) * | 1989-08-11 | 1991-08-07 | Sanyo Electric Co., Ltd. | Dry etching method |
US5011567A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5493445A (en) * | 1990-03-29 | 1996-02-20 | The United States Of America As Represented By The Secretary Of The Navy | Laser textured surface absorber and emitter |
US5322988A (en) * | 1990-03-29 | 1994-06-21 | The United States Of America As Represented By The Secretary Of The Navy | Laser texturing |
JPH0464234A (ja) * | 1990-07-04 | 1992-02-28 | Mitsubishi Electric Corp | 配線パターンの形成方法 |
JP3128231B2 (ja) * | 1990-07-24 | 2001-01-29 | ソニー株式会社 | 銅系材料のパターニング方法 |
USH1637H (en) * | 1991-09-18 | 1997-03-04 | Offord; Bruce W. | Laser-assisted fabrication of bipolar transistors in silicon-on-sapphire (SOS) |
US5326426A (en) * | 1991-11-14 | 1994-07-05 | Tam Andrew C | Undercut membrane mask for high energy photon patterning |
GB9207054D0 (en) * | 1992-03-31 | 1992-05-13 | Gillette Co | Methods of manufacturing perforated foils |
GB9221099D0 (en) * | 1992-10-07 | 1992-11-18 | Ecossensors Ltd | Improvements in and relating to gas permeable membranes for amperometric gas electrodes |
US5364493A (en) * | 1993-05-06 | 1994-11-15 | Litel Instruments | Apparatus and process for the production of fine line metal traces |
JP2951215B2 (ja) * | 1993-09-10 | 1999-09-20 | レイセオン・カンパニー | 位相マスクレーザによる微細なパターンの電子相互接続構造の製造方法 |
US5431774A (en) * | 1993-11-30 | 1995-07-11 | Texas Instruments Incorporated | Copper etching |
US5505320A (en) * | 1994-11-22 | 1996-04-09 | International Business Machines Corporation | Method employing laser ablating for providing a pattern on a substrate |
US5544775A (en) * | 1994-12-22 | 1996-08-13 | International Business Machines Corporation | Laser machined slider |
US5607601A (en) * | 1995-02-02 | 1997-03-04 | The Aerospace Corporation | Method for patterning and etching film layers of semiconductor devices |
US5958628A (en) * | 1995-06-06 | 1999-09-28 | International Business Machines Corporation | Formation of punch inspection masks and other devices using a laser |
US5589085A (en) * | 1995-08-04 | 1996-12-31 | Meeco, Incorporated | Process of manufacturing a detecting unit for an electrolytic cell with thin film electrodes |
US5800724A (en) * | 1996-02-14 | 1998-09-01 | Fort James Corporation | Patterned metal foil laminate and method for making same |
US6207330B1 (en) | 1997-07-14 | 2001-03-27 | International Business Machines Corporation | Formation of punch inspection masks and other devices using a laser |
US6919162B1 (en) * | 1998-08-28 | 2005-07-19 | Agilent Technologies, Inc. | Method for producing high-structure area texturing of a substrate, substrates prepared thereby and masks for use therein |
US6080959A (en) * | 1999-03-12 | 2000-06-27 | Lexmark International, Inc. | System and method for feature compensation of an ablated inkjet nozzle plate |
US6407001B1 (en) * | 2000-06-30 | 2002-06-18 | Intel Corporation | Focused ion beam etching of copper |
US6719916B2 (en) | 2001-04-18 | 2004-04-13 | National Research Council Of Canada | Multilayer microstructures and laser based method for precision and reduced damage patterning of such structures |
US6730237B2 (en) * | 2001-06-22 | 2004-05-04 | International Business Machines Corporation | Focused ion beam process for removal of copper |
KR100621550B1 (ko) * | 2004-03-17 | 2006-09-14 | 삼성전자주식회사 | 테이프 배선 기판의 제조방법 |
US7244474B2 (en) | 2004-03-26 | 2007-07-17 | Applied Materials, Inc. | Chemical vapor deposition plasma process using an ion shower grid |
US7291360B2 (en) | 2004-03-26 | 2007-11-06 | Applied Materials, Inc. | Chemical vapor deposition plasma process using plural ion shower grids |
US7695590B2 (en) | 2004-03-26 | 2010-04-13 | Applied Materials, Inc. | Chemical vapor deposition plasma reactor having plural ion shower grids |
US8058156B2 (en) | 2004-07-20 | 2011-11-15 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having multiple ion shower grids |
US7767561B2 (en) | 2004-07-20 | 2010-08-03 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having an ion shower grid |
JP4269295B2 (ja) * | 2007-02-20 | 2009-05-27 | セイコーエプソン株式会社 | 微細構造体の製造方法 |
US20110061812A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
JP5710645B2 (ja) * | 2010-12-17 | 2015-04-30 | タツモ株式会社 | パターニング方法 |
US8501613B2 (en) * | 2011-07-07 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | UBM etching methods for eliminating undercut |
US9576810B2 (en) | 2013-10-03 | 2017-02-21 | Applied Materials, Inc. | Process for etching metal using a combination of plasma and solid state sources |
CN109374596B (zh) * | 2018-11-08 | 2021-09-10 | 天津大学 | 基于激光诱导击穿光谱的便携式烟气重金属元素检测系统 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3364087A (en) * | 1964-04-27 | 1968-01-16 | Varian Associates | Method of using laser to coat or etch substrate |
US3772496A (en) * | 1971-10-26 | 1973-11-13 | Western Electric Co | Methods of forming a conductive path using an oxygen plasma to reduce reflectivity prior to laser machining |
JPS50130370A (de) * | 1974-04-01 | 1975-10-15 | ||
JPS5215267A (en) * | 1975-07-28 | 1977-02-04 | Hitachi Ltd | Fine processing method |
US4221047A (en) * | 1979-03-23 | 1980-09-09 | International Business Machines Corporation | Multilayered glass-ceramic substrate for mounting of semiconductor device |
US4260649A (en) * | 1979-05-07 | 1981-04-07 | The Perkin-Elmer Corporation | Laser induced dissociative chemical gas phase processing of workpieces |
US4245273A (en) * | 1979-06-29 | 1981-01-13 | International Business Machines Corporation | Package for mounting and interconnecting a plurality of large scale integrated semiconductor devices |
JPS56105479A (en) * | 1980-01-25 | 1981-08-21 | Mitsubishi Electric Corp | Pattern formation method |
US4332999A (en) * | 1980-10-09 | 1982-06-01 | Rca Corporation | Method for machining a workpiece with a beam of radiant energy assisted by a chemically-reactive gas |
US4331504A (en) * | 1981-06-25 | 1982-05-25 | International Business Machines Corporation | Etching process with vibrationally excited SF6 |
JPH0622212B2 (ja) * | 1983-05-31 | 1994-03-23 | 株式会社東芝 | ドライエッチング方法 |
US4490211A (en) * | 1984-01-24 | 1984-12-25 | International Business Machines Corporation | Laser induced chemical etching of metals with excimer lasers |
-
1984
- 1984-01-24 US US06/573,452 patent/US4490211A/en not_active Expired - Lifetime
- 1984-11-20 JP JP59243533A patent/JPS60187026A/ja active Pending
- 1984-12-11 DE DE8484115012T patent/DE3477022D1/de not_active Expired
- 1984-12-11 EP EP84115012A patent/EP0149779B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0149779A3 (en) | 1986-08-13 |
EP0149779A2 (de) | 1985-07-31 |
EP0149779B1 (de) | 1989-03-08 |
JPS60187026A (ja) | 1985-09-24 |
US4490211A (en) | 1984-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |