DE3474611D1 - Method of manufacturing a soldi-state image pickup device - Google Patents

Method of manufacturing a soldi-state image pickup device

Info

Publication number
DE3474611D1
DE3474611D1 DE8484305337T DE3474611T DE3474611D1 DE 3474611 D1 DE3474611 D1 DE 3474611D1 DE 8484305337 T DE8484305337 T DE 8484305337T DE 3474611 T DE3474611 T DE 3474611T DE 3474611 D1 DE3474611 D1 DE 3474611D1
Authority
DE
Germany
Prior art keywords
soldi
manufacturing
image pickup
pickup device
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484305337T
Other languages
English (en)
Inventor
Nozomu Patent Division Harada
Yoshiaki Patent Di Komatsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3474611D1 publication Critical patent/DE3474611D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14893—Charge coupled imagers comprising a photoconductive layer deposited on the CCD structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/075—Imide resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/172—Vidicons

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE8484305337T 1983-08-23 1984-08-06 Method of manufacturing a soldi-state image pickup device Expired DE3474611D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58153761A JPS6045057A (ja) 1983-08-23 1983-08-23 固体撮像装置の製造方法

Publications (1)

Publication Number Publication Date
DE3474611D1 true DE3474611D1 (en) 1988-11-17

Family

ID=15569550

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484305337T Expired DE3474611D1 (en) 1983-08-23 1984-08-06 Method of manufacturing a soldi-state image pickup device

Country Status (4)

Country Link
US (1) US4608749A (de)
EP (1) EP0139366B1 (de)
JP (1) JPS6045057A (de)
DE (1) DE3474611D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0187979B1 (de) * 1985-01-07 1993-04-07 Siemens Aktiengesellschaft Monolithisch integrierter WDM-Demultiplexmodul und ein Verfahren zur Herstellung eines solchen Moduls
US4693780A (en) * 1985-02-22 1987-09-15 Siemens Aktiengesellschaft Electrical isolation and leveling of patterned surfaces
US5309013A (en) * 1985-04-30 1994-05-03 Canon Kabushiki Kaisha Photoelectric conversion device
US4713142A (en) * 1985-05-01 1987-12-15 Texas Instruments Incorporated Method for fabricating EPROM array
JPS61292960A (ja) * 1985-06-21 1986-12-23 Toshiba Corp 固体撮像装置
EP0228712B1 (de) * 1986-01-06 1995-08-09 Sel Semiconductor Energy Laboratory Co., Ltd. Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren
DE3789846T2 (de) * 1986-10-07 1994-09-22 Canon Kk Bildablesesystem.
US4894701A (en) * 1988-05-09 1990-01-16 General Electric Company Semiconductor device detector and method of forming same
FR2636171B1 (fr) * 1988-08-10 1990-11-09 Philips Nv Dispositif capteur d'images du type a transfert de trame
US5286669A (en) * 1989-07-06 1994-02-15 Kabushiki Kaisha Toshiba Solid-state imaging device and method of manufacturing the same
US5235198A (en) * 1989-11-29 1993-08-10 Eastman Kodak Company Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel
US5182624A (en) * 1990-08-08 1993-01-26 Minnesota Mining And Manufacturing Company Solid state electromagnetic radiation detector fet array
US5273910A (en) * 1990-08-08 1993-12-28 Minnesota Mining And Manufacturing Company Method of making a solid state electromagnetic radiation detector
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US5234860A (en) * 1992-03-19 1993-08-10 Eastman Kodak Company Thinning of imaging device processed wafers
JP2910394B2 (ja) * 1992-03-19 1999-06-23 日本電気株式会社 固体撮像素子およびその製造方法
US5416344A (en) * 1992-07-29 1995-05-16 Nikon Corporation Solid state imaging device and method for producing the same
GB9520791D0 (en) * 1995-10-13 1995-12-13 Philips Electronics Nv Image sensor
JP4294745B2 (ja) 1997-09-26 2009-07-15 株式会社半導体エネルギー研究所 光電変換装置の作製方法
KR101819757B1 (ko) * 2009-06-17 2018-01-17 더 리젠츠 오브 더 유니버시티 오브 미시간 평판 ｘ-선 영상기에서의 포토다이오드 및 기타 센서 구조물, 및 박막 전자 회로에 기초하여 평판 ｘ-선 영상기에서의 포토다이오드 및 기타 센서 구조물의 토폴로지적 균일성을 향상시키는 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57702B2 (de) * 1971-10-15 1982-01-07
JPS5622862B2 (de) * 1972-03-09 1981-05-27
JPS5140711A (en) * 1974-10-02 1976-04-05 Nippon Electric Co 2 jigendenkatensososhi oyobi koreomochiita eizoshingono goseihoho
JPS5827712B2 (ja) * 1975-12-25 1983-06-10 株式会社東芝 コタイサツゾウソウチ
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
US4394749A (en) * 1979-06-08 1983-07-19 Hitachi, Ltd. Photoelectric device and method of producing the same
JPS56103578A (en) * 1980-01-23 1981-08-18 Hitachi Ltd Solid state pickup element
JPS56157075A (en) * 1980-05-09 1981-12-04 Hitachi Ltd Photoelectric transducing device
US4517733A (en) * 1981-01-06 1985-05-21 Fuji Xerox Co., Ltd. Process for fabricating thin film image pick-up element
JPS57162364A (en) * 1981-03-30 1982-10-06 Matsushita Electric Ind Co Ltd Solid state image pickup device
JPS5833854A (ja) * 1981-08-21 1983-02-28 Fujitsu Ltd 半導体装置の製造方法
JPS5846652A (ja) * 1981-09-14 1983-03-18 Fujitsu Ltd 多層配線形成方法
JPS5861663A (ja) * 1981-10-08 1983-04-12 Matsushita Electronics Corp 固体撮像装置の製造方法
JPS5873285A (ja) * 1981-10-28 1983-05-02 Nec Corp 固体撮像素子

Also Published As

Publication number Publication date
EP0139366B1 (de) 1988-10-12
EP0139366A1 (de) 1985-05-02
JPS6045057A (ja) 1985-03-11
US4608749A (en) 1986-09-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee