DE3470966D1 - Amorphous silicon photoreceptor - Google Patents

Amorphous silicon photoreceptor

Info

Publication number
DE3470966D1
DE3470966D1 DE8484112329T DE3470966T DE3470966D1 DE 3470966 D1 DE3470966 D1 DE 3470966D1 DE 8484112329 T DE8484112329 T DE 8484112329T DE 3470966 T DE3470966 T DE 3470966T DE 3470966 D1 DE3470966 D1 DE 3470966D1
Authority
DE
Germany
Prior art keywords
amorphous silicon
silicon photoreceptor
photoreceptor
amorphous
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484112329T
Other languages
English (en)
Inventor
Hideo Nojima
Yoshimi Kojima
Eiji Imada
Toshiro Matsuyama
Takashi Hayakawa
Shiro Narikawa
Shaw Ehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3470966D1 publication Critical patent/DE3470966D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE8484112329T 1983-10-13 1984-10-12 Amorphous silicon photoreceptor Expired DE3470966D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58192078A JPS6083957A (ja) 1983-10-13 1983-10-13 電子写真感光体

Publications (1)

Publication Number Publication Date
DE3470966D1 true DE3470966D1 (en) 1988-06-09

Family

ID=16285267

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484112329T Expired DE3470966D1 (en) 1983-10-13 1984-10-12 Amorphous silicon photoreceptor

Country Status (4)

Country Link
US (1) US4943503A (de)
EP (1) EP0137516B1 (de)
JP (1) JPS6083957A (de)
DE (1) DE3470966D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1271076A (en) * 1985-08-26 1990-07-03 Stephen J. Hudgens Enhancement layer for electrophotographic devices and method for decreasing charge fatigue through the use of said layer
JPS6289064A (ja) * 1985-10-16 1987-04-23 Canon Inc 光受容部材
JPS62106468A (ja) * 1985-11-01 1987-05-16 Canon Inc 光受容部材
US4675272A (en) * 1985-11-01 1987-06-23 Energy Conversion Devices, Inc. Electrolevelled substrate for electrophotographic photoreceptors and method of fabricating same
JP2564114B2 (ja) * 1985-11-14 1996-12-18 キヤノン株式会社 光受容部材
JPS62115453A (ja) * 1985-11-15 1987-05-27 Canon Inc 光受容部材
JPH083645B2 (ja) * 1985-12-20 1996-01-17 株式会社小松製作所 電子写真感光体
CA2005255C (en) * 1988-12-14 1994-01-18 Katsuhiko Hayashi Contact type photoelectric transducer
EP0388154A3 (de) * 1989-03-13 1990-10-17 Fujitsu Limited Photohalbleitervorrichtung
US5392098A (en) * 1991-05-30 1995-02-21 Canon Kabushiki Kaisha Electrophotographic apparatus with amorphous silicon-carbon photosensitive member driven relative to light source
JPH0786693B2 (ja) * 1992-08-31 1995-09-20 スタンレー電気株式会社 電子写真用感光体

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS56146142A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Electrophotographic sensitive film
JPS5711351A (en) * 1980-06-25 1982-01-21 Shunpei Yamazaki Electrostatic copying machine
JPS5727263A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Electrophotographic photosensitive film
US4557987A (en) * 1980-12-23 1985-12-10 Canon Kabushiki Kaisha Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers
JPS5888753A (ja) * 1981-11-24 1983-05-26 Oki Electric Ind Co Ltd 電子写真感光体
US4460670A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, N or O and dopant
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant
JPS58145951A (ja) * 1982-02-24 1983-08-31 Stanley Electric Co Ltd アモルフアスシリコン感光体

Also Published As

Publication number Publication date
EP0137516A3 (en) 1986-02-19
EP0137516B1 (de) 1988-05-04
JPS6083957A (ja) 1985-05-13
US4943503A (en) 1990-07-24
EP0137516A2 (de) 1985-04-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee