DE3469445D1 - Gaas single crystal and preparation thereof - Google Patents

Gaas single crystal and preparation thereof

Info

Publication number
DE3469445D1
DE3469445D1 DE8484114530T DE3469445T DE3469445D1 DE 3469445 D1 DE3469445 D1 DE 3469445D1 DE 8484114530 T DE8484114530 T DE 8484114530T DE 3469445 T DE3469445 T DE 3469445T DE 3469445 D1 DE3469445 D1 DE 3469445D1
Authority
DE
Germany
Prior art keywords
preparation
single crystal
gaas single
gaas
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484114530T
Other languages
English (en)
Inventor
Takashi C O Itami Work Shimoda
Masami C O Itami Works Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3469445D1 publication Critical patent/DE3469445D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8484114530T 1983-12-01 1984-11-30 Gaas single crystal and preparation thereof Expired DE3469445D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58227247A JPS60122798A (ja) 1983-12-01 1983-12-01 砒化ガリウム単結晶とその製造方法

Publications (1)

Publication Number Publication Date
DE3469445D1 true DE3469445D1 (en) 1988-03-31

Family

ID=16857819

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484114530T Expired DE3469445D1 (en) 1983-12-01 1984-11-30 Gaas single crystal and preparation thereof

Country Status (4)

Country Link
US (1) US4618396A (de)
EP (1) EP0149082B1 (de)
JP (1) JPS60122798A (de)
DE (1) DE3469445D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60137899A (ja) * 1983-12-23 1985-07-22 Sumitomo Electric Ind Ltd 砒化ガリウム単結晶とその製造方法
CA1224885A (en) * 1984-01-18 1987-07-28 Kenichi Kikuchi Integrated circuit and method for producing it
JPH0628234B2 (ja) * 1984-10-05 1994-04-13 株式会社日立製作所 ＧａＡｓ単結晶および半導体装置
US5733805A (en) * 1984-10-05 1998-03-31 Hitachi, Ltd. Method of fabricating semiconductor device utilizing a GaAs single crystal
JPS6270291A (ja) * 1985-09-19 1987-03-31 Toshiba Corp ＧａＡｓ単結晶の製造方法及び装置
JPS62256793A (ja) * 1986-05-01 1987-11-09 Shin Etsu Handotai Co Ltd 化合物半導体単結晶の引上方法
JPH0788277B2 (ja) * 1987-02-13 1995-09-27 住友電気工業株式会社 半絶縁性ガリウム砒素単結晶
JPH01239089A (ja) * 1987-11-30 1989-09-25 Toshiba Corp 化合物半導体単結晶の製造方法及び製造装置
JP2687103B2 (ja) * 1995-03-24 1997-12-08 科学技術振興事業団 温度分布を制御したＳｉ単結晶育成方法
JP3397968B2 (ja) * 1996-03-29 2003-04-21 信越半導体株式会社 半導体単結晶インゴットのスライス方法
US6809027B2 (en) * 2002-06-06 2004-10-26 International Business Machines Corporation Self-aligned borderless contacts
US7617742B2 (en) * 2006-06-14 2009-11-17 Battelle Energy Alliance, Llc Flow through in situ reactors with suction lysimeter sampling capability and methods of using
CN114808131B (zh) * 2022-04-20 2023-05-09 北京通美晶体技术股份有限公司 一种GaAs单晶及其VGF制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1288869A (fr) * 1961-02-15 1962-03-30 Electronique & Physique Perfectionnements aux méthodes pour la préparation et l'utilisation de composés chimiques, notamment des hydrures, en quantités réglables et dispositifs pour leur mise en application
US3496118A (en) * 1966-04-19 1970-02-17 Bell & Howell Co Iiib-vb compounds
DE1934369C3 (de) * 1969-07-07 1974-10-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zum Herstellen von Einkristallen aus HI-V Verbindungen
US3630906A (en) * 1969-10-02 1971-12-28 Bell & Howell Co Gallium arsenide

Also Published As

Publication number Publication date
EP0149082A2 (de) 1985-07-24
EP0149082B1 (de) 1988-02-24
US4618396A (en) 1986-10-21
EP0149082A3 (en) 1985-08-07
JPH0448759B2 (de) 1992-08-07
JPS60122798A (ja) 1985-07-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee