DE3466460D1 - A furnace suitable for heat-treating semiconductor bodies - Google Patents

A furnace suitable for heat-treating semiconductor bodies

Info

Publication number
DE3466460D1
DE3466460D1 DE8484200355T DE3466460T DE3466460D1 DE 3466460 D1 DE3466460 D1 DE 3466460D1 DE 8484200355 T DE8484200355 T DE 8484200355T DE 3466460 T DE3466460 T DE 3466460T DE 3466460 D1 DE3466460 D1 DE 3466460D1
Authority
DE
Germany
Prior art keywords
heat
semiconductor bodies
furnace suitable
treating semiconductor
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484200355T
Other languages
English (en)
Inventor
Gordon Kenneth Mcginty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronic and Associated Industries Ltd
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd, Philips Gloeilampenfabrieken NV filed Critical Philips Electronic and Associated Industries Ltd
Application granted granted Critical
Publication of DE3466460D1 publication Critical patent/DE3466460D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Furnace Details (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
DE8484200355T 1983-03-18 1984-03-13 A furnace suitable for heat-treating semiconductor bodies Expired DE3466460D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08307588A GB2136937A (en) 1983-03-18 1983-03-18 A furnace for rapidly heating semiconductor bodies

Publications (1)

Publication Number Publication Date
DE3466460D1 true DE3466460D1 (en) 1987-10-29

Family

ID=10539844

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484200355T Expired DE3466460D1 (en) 1983-03-18 1984-03-13 A furnace suitable for heat-treating semiconductor bodies

Country Status (5)

Country Link
US (1) US4540876A (de)
EP (1) EP0119654B1 (de)
JP (1) JPH0715894B2 (de)
DE (1) DE3466460D1 (de)
GB (1) GB2136937A (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4680451A (en) * 1985-07-29 1987-07-14 A. G. Associates Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers
EP0290692B1 (de) * 1987-05-14 1993-09-08 AG Processing Technologies, Inc. Heizapparat für Halbleiter-Wafer
DE3684539D1 (de) * 1985-09-06 1992-04-30 Philips Nv Herstellungsverfahren einer halbleitervorrichtung.
US4789771A (en) * 1985-10-07 1988-12-06 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus
US4654509A (en) * 1985-10-07 1987-03-31 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus
GB2202236B (en) * 1987-03-09 1991-04-24 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US5336641A (en) * 1992-03-17 1994-08-09 Aktis Corporation Rapid thermal annealing using thermally conductive overcoat
US5196676A (en) * 1992-04-27 1993-03-23 Billco Manufacturing, Inc. Oven unit for heat treating sealant material
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5452396A (en) * 1994-02-07 1995-09-19 Midwest Research Institute Optical processing furnace with quartz muffle and diffuser plate
US6002109A (en) 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6198074B1 (en) 1996-09-06 2001-03-06 Mattson Technology, Inc. System and method for rapid thermal processing with transitional heater
US5934357A (en) * 1996-11-13 1999-08-10 Aluminum Company Of America System for manufacturing metal matrix composites
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6972058B1 (en) * 1997-12-16 2005-12-06 A. Finkl & Sons Co. Heat treatment method and apparatus
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6395085B2 (en) 1999-07-14 2002-05-28 Seh America, Inc. Purity silicon wafer for use in advanced semiconductor devices
WO2001006031A1 (en) * 1999-07-14 2001-01-25 Seh America, Inc. Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
US6375749B1 (en) 1999-07-14 2002-04-23 Seh America, Inc. Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
US6632277B2 (en) 1999-07-14 2003-10-14 Seh America, Inc. Optimized silicon wafer gettering for advanced semiconductor devices
US6454852B2 (en) 1999-07-14 2002-09-24 Seh America, Inc. High efficiency silicon wafer optimized for advanced semiconductor devices
US20020062792A1 (en) * 1999-07-14 2002-05-30 Seh America, Inc. Wafer support device and reactor system for epitaxial layer growth
US6149365A (en) * 1999-09-21 2000-11-21 Applied Komatsu Technology, Inc. Support frame for substrates
ES2237483T3 (es) * 1999-11-09 2005-08-01 Centrotherm Elektrische Anlagen Gmbh + Co. Calefaccion por radiacion con una elevada potencia de radiacion infrarroja para camaras de tratamiento.
US6310323B1 (en) * 2000-03-24 2001-10-30 Micro C Technologies, Inc. Water cooled support for lamps and rapid thermal processing chamber
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
CN101324470B (zh) 2001-12-26 2011-03-30 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
JP2004319754A (ja) * 2003-04-16 2004-11-11 Dainippon Screen Mfg Co Ltd 熱処理装置
WO2005059991A1 (en) 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
JP4501431B2 (ja) * 2004-01-08 2010-07-14 ウシオ電機株式会社 閃光放電ランプ装置
US7083301B2 (en) * 2004-02-20 2006-08-01 Au Optronics Corp. Backlight module and a display device utilizing the same
JP5967859B2 (ja) 2006-11-15 2016-08-10 マトソン テクノロジー、インコーポレイテッド 熱処理中の被加工物を支持するシステムおよび方法
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US24296A (en) * 1859-06-07 Safety-cage fob coal-shaets
US2864932A (en) * 1954-08-19 1958-12-16 Walter O Forrer Infrared cooking oven
US3240915A (en) * 1962-09-19 1966-03-15 Fostoria Corp Infra-red heater
US3313917A (en) * 1963-11-21 1967-04-11 Litton Prec Products Inc Doorless infrared oven
US3305680A (en) * 1965-01-11 1967-02-21 Hi Shear Corp Lamp terminal assembly
US3436524A (en) * 1967-06-05 1969-04-01 Research Inc Heat energy receptor-radiator wall
US3533352A (en) * 1968-07-23 1970-10-13 Leonidas C Miller Apparatus for applying heat and pressure
US3655173A (en) * 1970-07-13 1972-04-11 Argus Eng Co Conveyor for fusing and heating systems
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
DD96852A1 (de) * 1972-05-09 1973-04-12
US3836751A (en) * 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
US4101759A (en) * 1976-10-26 1978-07-18 General Electric Company Semiconductor body heater
JPS54103174A (en) * 1978-01-31 1979-08-14 Tokyo Shibaura Electric Co Cooking instrument
US4164643A (en) * 1978-03-06 1979-08-14 Dewitt David P Energy-efficient bi-radiant oven system
JPS56100412A (en) * 1979-12-17 1981-08-12 Sony Corp Manufacture of semiconductor device
JPS5764936A (en) * 1980-10-09 1982-04-20 Ushio Inc Annealing device
US4411619A (en) * 1981-04-02 1983-10-25 Motorola, Inc. Flange and coupling cooling means and method
JPS5826482A (ja) * 1981-08-08 1983-02-16 真空理工株式会社 赤外線加熱装置
US4421048A (en) * 1981-10-22 1983-12-20 The United States Of America As Represented By The Secretary Of The Navy Situ incineration/detoxification system for antifouling coatings

Also Published As

Publication number Publication date
US4540876A (en) 1985-09-10
JPS59178722A (ja) 1984-10-11
GB8307588D0 (en) 1983-04-27
EP0119654A1 (de) 1984-09-26
EP0119654B1 (de) 1987-09-23
GB2136937A (en) 1984-09-26
JPH0715894B2 (ja) 1995-02-22

Similar Documents

Publication Publication Date Title
DE3466460D1 (en) A furnace suitable for heat-treating semiconductor bodies
EP0163413A3 (en) Apparatus for transferring semi-conductor wafers
EP0169574A3 (en) Apparatus for manufacturing semiconductor device
GB8422194D0 (en) Workpiece transfer means for loadlocks
ATA389383A (de) Verfahren zum herstellen einer schuetzenden diffusionsschicht auf nickel-, kobalt- und eisenlegierungen
GB8513261D0 (en) Semiconductor manufacturing method
GB8410251D0 (en) Handling semiconductor wafers
DE3362067D1 (en) Fluidized-bed furnace
GB8418927D0 (en) Semiconductor manufacturing apparatus
GB2140929B (en) Process for making semiconductors devices
GB2162369B (en) Apparatus for forming semiconductor crystal
GB8425807D0 (en) Manufacturing refractory bodies
GB2180788B (en) Apparatus for manufacturing wafers
GB8415870D0 (en) Furnace
EP0130847A3 (en) Semiconductor device manufacturing method
GB8300765D0 (en) Furnaces
SG78889G (en) Grate for furnaces
GB8512942D0 (en) Manufacturing refractory bodies
DE3374710D1 (en) Fluidized-bed furnace
GB8319824D0 (en) Furnace
GB8302170D0 (en) Furnace delining apparatus
EP0169519A3 (en) Semiconductor device and method for its fabrication
GB8308016D0 (en) Furnaces
GB8310679D0 (en) Kiln
GB2151994B (en) Heat-treating vehicle bodies

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee